Preparation of Al nanoarray on quartz and fluorescence enhancement performance

WANG Ziheng; LI Jinhua; CHU Xueying; ZHANG Ye

doi:10.37188/OPE.20233114.2052

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Preparation of Al nanoarray on quartz and fluorescence enhancement performance

Micro/Nano Technology and Fine Mechanics | 更新时间：2023-08-26

- Preparation of Al nanoarray on quartz and fluorescence enhancement performance
- Optics and Precision Engineering Vol. 31, Issue 14, Pages: 2052-2059(2023)
- 作者机构：
  
  1.长春理工大学物理学院，吉林长春 130022
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20233114.2052
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WANG Ziheng, LI Jinhua, CHU Xueying, et al. Preparation of Al nanoarray on quartz and fluorescence enhancement performance. [J]. Optics and Precision Engineering 31(14):2052-2059(2023)
DOI：

WANG Ziheng, LI Jinhua, CHU Xueying, et al. Preparation of Al nanoarray on quartz and fluorescence enhancement performance. [J]. Optics and Precision Engineering 31(14):2052-2059(2023) DOI： 10.37188/OPE.20233114.2052.

摘要

针对透明衬底上紫外共振金属纳米阵列制备的技术需求，在不导电石英衬底上，采用电子束曝光制备Al纳米阵列，并对其形貌及性能进行研究。在电子束曝光过程中，引入Cr金属层克服衬底不导电问题。采用曝光剂量测试和加工参数调节优化纳米棒形貌。采用时域有限差分法分析Al纳米棒在325 nm紫外光激发下的电场分布，并以Langmuir-Blodgett（L-B）技术将CdSe/ZnS量子点沉积在Al纳米阵列表面进一步明确其荧光增强性能。结果表明，1 200 μc/cm,2,剂量下制备的Al纳米棒尺寸分布均匀，最终获得了取向互相垂直的四个区域集成的Al纳米阵列。光学性质分析表明，Al纳米棒阵列可使CdSe/ZnS量子点的荧光强度增强约1.7倍。仿真结果表明，紫外光辐照下Al纳米棒末端电场强度明显高于纳米棒两侧，明确了量子点发光增强机理。成功在不导电衬底上获得多取向集成的、对量子点具有显著荧光增强效果的Al纳米阵列，为背光激发下量子点发光调控和偏振调制提供了一种新策略。

Abstract

To address the difficulties in the preparation of ultraviolet （UV） resonance metal nanoarrays on transparent substrates， Al nanoarrays were prepared by electron beam exposure on a non-conducting quartz substrate and their morphology and properties were studied. A Cr metal layer was introduced to overcome the problem of non-conductivity in the electron beam exposure process. Nanorod morphology was optimized by adjustments to the exposure dose and design parameters. The electric field distribution of Al nanorods （excited by 325 nm UV light） was analyzed by using the finite-difference time-domain method. CdSe/ZnS quantum dots were deposited on the surface of Al nanoarrays by using Langmuir–Blodgett technology for fluorescence performance enhancement. The results indicate uniformity in the size distribution of Al nanorods prepared at a 1 200 μC/cm,2, dose. Four regions with Al nanorods in mutually perpendicular orientations were integrated. Optical analysis results indicate that the fluorescence intensity of CdSe/ZnS quantum dots could be enhanced approximately 1.7 times by the Al nanorod array. Simulation results show that， under UV radiation， the electric field intensities at the ends of the nanorods were higher than at their sides， thereby revealing their influence on the fluorescence enhancement of the quantum dots. The multi-oriented integrated Al nanoarray with quantum dot fluorescence enhancement effects， which was prepared on a non-conducting substrate， provides a new strategy for the luminescence and polarization modulation of quantum dots under backlight excitation.

关键词

透明衬底量子点荧光增强时域有限差分法

Keywords

transparent substratequantum dotsfluorescence enhancementFDTD method

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