Surface crack depth detection of sapphire substrate two-sided lapping

PENG Fuxin; HU Zhongwei; CHEN Yu; XIE Binhui; ZHOU Zhihao

doi:10.37188/OPE.20233114.2060

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Surface crack depth detection of sapphire substrate two-sided lapping

Micro/Nano Technology and Fine Mechanics | 更新时间：2023-08-26

- Surface crack depth detection of sapphire substrate two-sided lapping
- Optics and Precision Engineering Vol. 31, Issue 14, Pages: 2060-2070(2023)
- 作者机构：
  
  1.华侨大学制造工程研究院，福建厦门 361021
  2.福建晶安光电有限公司，福建泉州 362411
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20233114.2060
  CLC：
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PENG Fuxin, HU Zhongwei, CHEN Yu, et al. Surface crack depth detection of sapphire substrate two-sided lapping. [J]. Optics and Precision Engineering 31(14):2060-2070(2023)
DOI：

PENG Fuxin, HU Zhongwei, CHEN Yu, et al. Surface crack depth detection of sapphire substrate two-sided lapping. [J]. Optics and Precision Engineering 31(14):2060-2070(2023) DOI： 10.37188/OPE.20233114.2060.

摘要

双面研磨作为蓝宝石衬底制备的一道重要工序，研磨表面裂纹深度将严重影响后续抛光的材料去除量，因此对研磨衬底表面裂纹特征研究及深度测量具有重要意义。本文采用截面显微观测法、聚焦离子束侧面观测法、差动蚀刻速率法、磁流变抛光法和逐层抛光法等方法观测双面研磨蓝宝石衬底表面裂纹特征和测量裂纹深度。采用截面显微观测法和聚焦离子束侧面观测法观测研磨后蓝宝石衬底亚表面裂纹形态主要有斜线状、横线状、钩状和树杈状。采用差动蚀刻速率法测得蓝宝石衬底研磨表面裂纹密集层厚度为9~10 μm，而采用磁流变抛光法测得研磨衬底局部亚表面裂纹深度为25~30 μm，采用逐层抛光法测得研磨衬底整体亚表面裂纹深度约为30~35 μm。此外，根据不同方法所检测的裂纹特征和裂纹深度，构建了蓝宝石衬底双面研磨表面裂纹模型，为后续抛光工艺的制定与优化提供依据。

Abstract

Two-sided lapping is an essential process in the fabrication of sapphire substrates， and it significantly affects the amount of material removed during subsequent polishing. Therefore， studying the characteristics and measuring the depths of surface cracks on lapped substrates are important processes. In this study， we investigate the surface crack characteristics and crack depths of two-sided lapped sapphire substrates using section apparent micrometry， focused ion beam side observations， a differential etching rate method， a magnetorheological polishing method， and a layer-by-layer polishing method. Consequently， we observe subsurface cracks on the sapphire substrate after grinding using the cross-sectional microscopic observation and focused ion beam side observation methods. These cracks mainly include oblique lines， horizontal lines， hooks， and dendritic patterns. The differential etching rate method reveals that the thickness of the crack dense layer on the grinding surface of the sapphire substrate measures 9-10 μm. Using the magnetorheological polishing method， we measure the depth of local subsurface cracks on the grinding substrate to be 25-30 μm. Furthermore， employing the layer-by-layer polishing method， we determine that the overall subsurface crack depth of the ground substrate is approximately 30-35 μm. Additionally， based on the crack characteristics and depths detected using different methods， we construct a surface crack model for the two-sided lapping of sapphire substrates. This model serves as a foundation for formulating and optimizing subsequent polishing processes.

关键词

蓝宝石衬底研磨表面裂纹裂纹检测

Keywords

sapphire substratelappingsurface crackcrack detection

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