Rapid ICP-based fabrication of large-area silicon three-dimensional interconnected honeycomb microwell array

LI Zhenghao; LÜ Xiao; LI Huan; CHENG Long; ZHOU Wenchao; WU Yihui

doi:10.37188/OPE.20233115.2227

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Rapid ICP-based fabrication of large-area silicon three-dimensional interconnected honeycomb microwell array

Micro/Nano Technology and Fine Mechanics | 更新时间：2023-08-28

- Rapid ICP-based fabrication of large-area silicon three-dimensional interconnected honeycomb microwell array
- Optics and Precision Engineering Vol. 31, Issue 15, Pages: 2227-2235(2023)
- 作者机构：
  
  1.中国科学院长春光学精密机械与物理研究所，吉林长春 130033
  2.中国科学院大学，北京 100049
- 作者简介：
  
  E-mail： zhouvc@ciomp.ac.cn
- 基金信息：
- DOI：10.37188/OPE.20233115.2227
  CLC：
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LI Zhenghao, LÜ Xiao, LI Huan, et al. Rapid ICP-based fabrication of large-area silicon three-dimensional interconnected honeycomb microwell array. [J]. Optics and Precision Engineering 31(15):2227-2235(2023)
DOI：

LI Zhenghao, LÜ Xiao, LI Huan, et al. Rapid ICP-based fabrication of large-area silicon three-dimensional interconnected honeycomb microwell array. [J]. Optics and Precision Engineering 31(15):2227-2235(2023) DOI： 10.37188/OPE.20233115.2227.

摘要

内部联通蜂窝状结构在组织工程、细胞培养、流体扩散、材料热扩散和表面科学等领域都具有十分重要的应用。采用两步刻蚀的方法，即各向异性与各向同性刻蚀相结合的方法，通过控制刻蚀参数（气体流量、释放周期、刻蚀功率、内部压强、硅材料刻蚀温度）在接近10 mm,2,面积上得到数量在2.2×10,5,~9.5×10,5,内，不同间距的硅材料内部联通蜂窝结构。电感耦合等离子体（ICP）使用的Bosch刻蚀法用于各向异性硅蚀刻，通过在氟碳等离子体下表面沉积聚合物，可以降低侧壁刻蚀效率，使结构具有垂直侧壁的高展弦比。在不施加保护气等离子体的条件下，ICP可以作为气体各向同性刻蚀设备，基于ICP的各向同性刻蚀能力相对于各向异性刻蚀具有硅刻蚀率高、可控性好、刻蚀选择性高等优点。该方法可以实现对硅基材料上的内联通蜂窝结构制备，能够精确地控制蜂窝结构的间距，均一性良好，并且可以快速大面积制备，具有步骤简单、制备周期短等优点。

Abstract

Inductively coupled plasma （ICP） systems are widely used in the field of anisotropic silicon etching. By depositing a polymer on the lower surface of fluorocarbon plasma， the side-wall etching efficiency can be reduced， and the resulting vertical side walls have a high aspect ratio. ICP can be used for gas-based isotropic etching in the absence of protective gas plasma， and ICP-based isotropic etching has the advantages of a higher silicon etching rate， better controllability， and higher etching selectivity compared with anisotropic etching. In this article， a two-step etching method is proposed for fabricating interconnected honeycomb structures with magnitudes of 2.2×10,5, to 9.5×10,5, with different pitches of silicon material over an area of 10 mm,2, by controlling etching parameters （gas flow， release period， etching power， internal pressure， and etching temperature of silicon material）. The proposed fabrication method can be used to precisely manufacture honeycomb structures with the desired spacing and homogeneity over a large area. In addition， it has the advantages of simple steps and shorter fabrication cycles. The method has important applications in tissue engineering， cell culture， fluid diffusion， the thermal diffusion of materials， and surface science.

关键词

各向同性刻蚀蜂窝结构内部联通刻蚀速率

Keywords

isotropic etchinghoneycomb structureinterconnectetch rate

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