Research on packaging technology of high power blue semiconductor laser bar

ZHOU Yong; WANG Qi; GAO Xiang; GAO Junjian; TAO Chunyan; HAO Mingming

doi:10.37188/OPE.20233122.3237

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Research on packaging technology of high power blue semiconductor laser bar

Modern Applied Optics | 更新时间：2023-11-28

- Research on packaging technology of high power blue semiconductor laser bar
- Optics and Precision Engineering Vol. 31, Issue 22, Pages: 3237-3244(2023)
- 作者机构：
  
  1.广东工业大学材料与能源学院，广东广州 510006
  2.北京大学东莞光电研究院，广东东莞 523822
  3.广东工业大学信息与工程学院，广东广州 510006
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20233122.3237
  CLC：
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周勇,王琦,高翔等.高功率蓝光半导体激光器巴条的封装技术研究[J].光学精密工程,2023,31(22):3237-3244.

ZHOU Yong,WANG Qi,GAO Xiang,et al.Research on packaging technology of high power blue semiconductor laser bar[J].Optics and Precision Engineering,2023,31(22):3237-3244.
周勇,王琦,高翔等.高功率蓝光半导体激光器巴条的封装技术研究[J].光学精密工程,2023,31(22):3237-3244. DOI： 10.37188/OPE.20233122.3237.

ZHOU Yong,WANG Qi,GAO Xiang,et al.Research on packaging technology of high power blue semiconductor laser bar[J].Optics and Precision Engineering,2023,31(22):3237-3244. DOI： 10.37188/OPE.20233122.3237.

摘要

为实现高功率的蓝光半导体激光输出，对蓝光巴条的封装技术进行了研究。利用金锡硬焊料封装了高功率氮化镓（GaN）蓝光半导体激光巴条，应用铜钨过渡热沉作为缓冲层抑制了铜热沉和GaN激光芯片之间封装残余应力，采用高精度贴片机将芯片共晶键合在铜钨过渡热沉上。贴片质量的好坏直接影响了器件的输出特性，所以重点分析了贴片机的焊接温度焊接压力、焊接时间对器件的影响。实验结果表明：当贴片机的焊接温度为320 ℃、焊接压力为0.5 N、焊接时间为40 s时，焊料层界面空洞最少，热阻最低为0.565 ℃/W，阈值电流最低为4.9 A，在注入电流30 A时，输出光功率最高为32.21 W，最高光电转换效率达到了23.3%。因此，在优化焊接温度、焊接压力、焊接时间后，利用金锡硬焊料将蓝光半导体激光芯片共晶键合在铜钨过渡热沉的技术方案是实现蓝光半导体激光巴条高功率工作的有效途径。

Abstract

To achieve high-power blue semiconductor laser outputs， the packaging technology of blue light bars was studied herein. First， high-power gallium nitride （GaN） blue semiconductor laser bars were encapsulated using gold-tin hard solder. A copper-tungsten transition heat sink was used as a buffer layer to suppress the residual stress between the copper heat sink and GaN laser chips. The chips were eutectic bonded onto the copper-tungsten transition heat sink using a high-precision SMT machine. Because the quality of the SMD directly affects the output characteristics of the device， the focus was on analyzing the impact of the bonding temperature and pressure of the SMD machine on the device. The experimental results reveal that， when the bonding temperature of the mounter is 320 °C， bonding pressure is 0.5 N， and bonding time is 40 s， the solder layer interface cavity is the smallest， thermal resistance is the lowest （0.565 °C/W）， and threshold current is also the lowest （4.9 A）. When the injection current is 30 A， the maximum output optical power is 32.21 W， and the maximum solar-cell efficiency reaches 23.3%. Therefore， after optimizing the bonding temperature， bonding pressure， and bonding time， the technical solution of using gold-tin hard solder to eutectic bond blue semiconductor laser chips onto copper-tungsten transition heat sinks is an effective way to achieve high-power operation of blue semiconductor laser bars.

关键词

高功率激光器半导体激光器氮化镓蓝光巴条铜钨过渡热沉

Keywords

high-power lasersemiconductor lasergallium nitrideblue lightBa Tiaocopper tungsten transition heat sink

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School of Optoelectronics， University of Chinese Academy of Sciences

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