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Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance
Modern Applied Optics | 更新时间：2024-11-20

    • Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

    • “In the field of high-frequency and high-power devices, significant changes in Schottky barrier and carrier concentration have been achieved by optimizing the electrical properties of SiC interface through femtosecond laser annealing.”
    • Optics and Precision Engineering   Vol. 32, Issue 19, Pages: 2889-2898(2024)

    • DOI：10.37188/OPE.20243219.2889    

      CLC： TN248

    • Received：23 April 2024，

      Revised：22 June 2024，

      Published：10 October 2024

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  • REN Yuqi,YUE Yunfan,LI Sheng,et al.Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance[J].Optics and Precision Engineering,2024,32(19):2889-2898. DOI： 10.37188/OPE.20243219.2889.

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