您当前的位置：
首页 >
文章列表页 >
Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance
Modern Applied Optics | 更新时间：2024-11-20
|

    • Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

    • “在高频高功率器件领域，通过飞秒激光退火优化SiC界面电学性能，实现了肖特基势垒和载流子浓度的显著变化。”
    • Optics and Precision Engineering   Vol. 32, Issue 19, Pages: 2889-2898(2024)

    • DOI：10.37188/OPE.20243219.2889    

      CLC： TN248

    • Published：10 October 2024，

      Received：23 April 2024，

      Revised：22 June 2024，

    移动端阅览

  • REN Yuqi,YUE Yunfan,LI Sheng,et al.Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance[J].Optics and Precision Engineering,2024,32(19):2889-2898. DOI： 10.37188/OPE.20243219.2889.

  •  
  •  

0

Views

9

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters
Velocity measurements in supersonic mixing layer using femtosecond laser electronic excitation tagging
Femtosecond laser precision machining of fuel injection holes in nickel-based superalloys
Rapid fabrication of hollow double helix microrobot using femtosecond laser dynamic holograpic method
Patterned microlens processed using two-photon polymerization of femtosecond laser and its imaging test

Related Author

QIAO Jian
WU Zhenduo
PENG Xinhan
RAN Yuxuan
YANG Jingwei
CHEN Li
YIN Yimin
LI Yudong

Related Institution

Ji Hua Laboratory
Shenzhen Hymson Laser Intelligent Equipments Co.，Ltd.
Guangdong Provincial Key Laboratory of Industrial Intelligent Inspection Technology， Foshan University
State Key Laboratory of Aerodynamics， China Aerodynamics Research and Development Center
Facility Design and Instrumentation Institute， China Aerodynamics Research and Development Center
0