Measurement of packaging-induced strain in high power diode laser bar

WANG Ye; ZHANG Yan; QIN Li; LIU Yun; WANG Li-jun

doi:10.3788/OPE.20101809.1951

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Measurement of packaging-induced strain in high power diode laser bar

Article | 更新时间：2020-08-12

- Measurement of packaging-induced strain in high power diode laser bar
- Optics and Precision Engineering Vol. 18, Issue 9, Pages: 1951-1958(2010)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态开放实验室,吉林长春130033
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20101809.1951
  CLC： TN248.4
- Received：23 November 2009，
  
  Revised：11 December 2009，
  
  Published Online：29 September 2010，
  
  Published：20 September 2010
- 稿件说明：
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王烨, 张岩, 秦莉, 刘云, 王立军. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学精密工程, 2010,18(9): 1951-1958

WANG Ye, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun. Measurement of packaging-induced strain in high power diode laser bar[J]. 光学精密工程, 2010,18(9): 1951-1958
王烨, 张岩, 秦莉, 刘云, 王立军. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学精密工程, 2010,18(9): 1951-1958 DOI： 10.3788/OPE.20101809.1951.

WANG Ye, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun. Measurement of packaging-induced strain in high power diode laser bar[J]. 光学精密工程, 2010,18(9): 1951-1958 DOI： 10.3788/OPE.20101809.1951.

摘要

考虑高功率半导体激光器列阵在封装过程中引入的封装应变会影响激光器的功率、波长和可靠性

对激光器封装应变的测量进行了研究。基于激光器输出光的偏振度变化可反映激光器有源区中量子阱的带隙变化

采用电致发光谱法推导了高功率半导体激光器输出的偏振度值与有源区应变值的关系。对800 nm GaAsP/GaInP高功率半导体激光器列阵有源区的应变进行了测量

测量结果与有限元模拟计算结果吻合较好。与理论计算出的有源区固有应变的对比结果显示

激光器芯片在封装过程中受到铜热沉的压缩

会将封装应变引入到有源区中

并且激光器中间的封装应变大于边缘的封装应变。另外

激光器有源区的应变起伏比较明显

认为这是由于采用电镀方法制备的铟焊接层中存在缺陷。测量得到的最大封装应变为1.37010

-3

缺陷密度为40.8%。得到的结果表明

激光器偏振度的测量能够正确反映激光器的缺陷和封装应变值

进而可以有效衡量激光器封装质量的好坏。

Abstract

As the strain caused by the packaging process of a diode laser influences on the output power

wavelength and the reliability of the high power diode laser bar

this paper researches the measurement of packaging-induced stain in the laser. On the basis of the variation of polarization degree of the output lights in the diode laser can reveal the variation of band edges of the quantum wells in active region of the diode laser bar

it deduces the dependence of the polarization degree of laser outputs on the packaging-induced stain by using electro-luminescent spectroscopy. The strain in active region of a 800 nm GaAsP/GaInP high power diode laser bar is studied and the experimental results are in good agreement with the theoretical simulation. Furthermore

the experimental results are compared with the original strain in active region of the diode laser bar

and it is found that the bar is compressed by the copper heat sink during the packaging process

and the packaging strain is induced in the active region. The packaging-induced strain at the center of the laser bar is higher than the one at the edges. Moreover

the experimental strain of the bar shows more variation apparently

which can be considered as that the defects are created in the indium solder layer fabricated by electrolytic deposition method. In the experiment

the maximum strain is 1.37010

-3

and the defect density is 40.8%.Obtained results demonstrate that the polarization degree measurement of the diode lasers can reveal the defects and the packaging-induced strains of diode lasers accurately and can well evaluate their qualities.

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Keywords

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