Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors

HAN Li-xiang; LI Zhan-kui; LU Wan; HU Jun; YANG Yan-yun; WANG Zhu-sheng

doi:10.3788/OPE.20101812.2616

您当前的位置：

首页 >

文章列表页 >

Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors

Article | 更新时间：2020-08-12

- Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors
- Optics and Precision Engineering Vol. 18, Issue 12, Pages: 2616-2623(2010)
- 作者机构：
  
  1. 中国科学院近代物理研究所,甘肃兰州 730000
  2. 中国科学院研究生院,北京100049
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20101812.2616
  CLC： TN36
- Received：30 April 2010，
  
  Revised：05 June 2010，
  
  Published Online：25 December 2010，
  
  Published：25 December 2010
- 稿件说明：
移动端阅览
韩励想, 李占奎, 鲁皖, 胡钧, 杨彦云, 王柱生. 双面二维硅微条探测器的沾污失效分析及修复[J]. 光学精密工程, 2010,18(12): 2616-2623

HAN Li-xiang, LI Zhan-kui, LU Wan, HU Jun, YANG Yan-yun, WANG Zhu-sheng. Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors[J]. Editorial Office of Optics and Precision Engineering, 2010,18(12): 2616-2623
韩励想, 李占奎, 鲁皖, 胡钧, 杨彦云, 王柱生. 双面二维硅微条探测器的沾污失效分析及修复[J]. 光学精密工程, 2010,18(12): 2616-2623 DOI： 10.3788/OPE.20101812.2616.

HAN Li-xiang, LI Zhan-kui, LU Wan, HU Jun, YANG Yan-yun, WANG Zhu-sheng. Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors[J]. Editorial Office of Optics and Precision Engineering, 2010,18(12): 2616-2623 DOI： 10.3788/OPE.20101812.2616.

摘要

硅微条探测器通过微电子工艺制作

易因沾污导致性能下降甚至失效;裸露的键合引线

也易因机械力形成隐性或显性失效。对上述现象的研究可用于修复、维护探测器并在设计和工艺流程中改进其性能。本文通过光学、电气手段分析其结构和制作工艺流程

根据沾污性质在不同条件下清洗探测器

中测后根据芯片图形、封装方式和电气要求修复探测器

最后采用同位素能谱测试修复效果。对一块沾污后失效(无法加载偏压)的硅微条清洗后在大气环境

N面接地

P面加载负偏压条件下进行了测试

结果显示: 170 V全耗尽

平均漏电流2.94 A

5.486 MeV的峰能量分辨率约1.28%。失效键合所在条的另一面各条能谱观测到假峰

键合修复后消除。因沾污失效的硅微条探测器经过合适的清洗、修复

部分可以恢复性能

但清洗对表面和结构有损伤

须谨慎。另外

键合失效后

因信号不能引出导致的电荷积累会通过电容效应影响其它灵敏区。文章提示

探测器应存放于洁净

恒温

低湿度

避光

避强电磁干扰的环境

以提高能量和位置分辨率

并增加工作稳定性

延长使用寿命。

Abstract

Silicon micro-strip detectors are fabricated by a micro-electronic process. Their performance will become worse

even failure when they suffer from various contaminations. Moreover

the naked bond wires are also easily disabled by external forces. The research for above mentioned events is available to repair and maintain these detectors

and to improve their performance. This paper analyses the detectors' structure and fabrication process

and cleans them in different conditions according to the characters of contamination. After a measurement

it repairs them based on the chip graphics

packaging means and the electronics demand. Finally

the isotope energy spectrum is used to measure the repaired detectors. A repaired detector shows that when the N-side is earthed and the P-side is biased negative 170 V

the detector is depleted and its average leakage current is 2.94 A. By bonding again

the ghost peaks in the energy spectra caused by the strips whose bond wire is invalid on the other side are eliminated. The results also indicate that most disabled detectors can be revived by reasonable cleaning and repairing

but the cleaning might damage the surface or structure of the detector

so it must be careful and not frequently. Furthermore

when a bond wire is invalid

the electric charge could not be led out

so they are accumulated and influence other sensitive region by charge effect. It points out that the detector should be stored a place in cleaning

thermostatic and low-humidity conditions and without light and strong electromagnetic waves. these methods would be beneficial to improving their energy resolution

position resolution

stability and working life.

关键词

Keywords

references

BERTOLINI G, COCHE A. Semiconductor Detectors[M]. Amsterdam: North-Holland Publishing Company, 1968.[2] 谢一冈,孟祥承,陈昌,等. 粒子探测器与数据获取[M]. 北京:科学出版社,2003.XIE Y G, MENG X CH, CHEN CH, et al.. Particle Detector and Data Acquisition[M]. Beijing: Science Press, 2003. (in Chinese)[3] 任延同. 离子刻蚀技术现状与未来发展[J]. 光学精密工程,1998,6(2):7-14. REN Y T. Presence and future developing tendency of ion-etching technology [J]. Opt. Precision Eng., 1998,6(2):7-14. (in Chinese)[4] 储佳,马向阳,杨德仁, 等. 硅片清洗研究进展[J]. 半导体技术,2001,26(2):17-19. CHU J,MA X Y,YANG D R,et al.. Silicon wafer cleaning[J]. Semiconductor Technology, 2001,26(3):17-19. (in Chinese)[5] 吴东江,许媛,王续跃,等. 激光清洗硅片表面Al2O3颗粒的试验和理论分析[J]. 光学精密工程,2006,14(5):764-771. WU D J, XU Y, WANG X Y, et al.. Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface[J]. Opt. Precision Eng., 2001,14(5):764-771. (in Chinese)[6] QUIRK M, SERDA J. Semiconductor Manufacturing Technology[M]. Beijing: Publishing House of Electronics Industry,2006.[7] 达道安. 真空手册[M]. 北京:国防工业出版社,2004. DA D A. Vacuum Manual[M]. Beijing:Defence industry Press, 2004. (in Chinese)[8] 周明宝,林大键. 微结构表面形貌的测量[J]. 光学精密工程,1999,7(3):7-13. ZHOU M B, LIN D J. Measurement of microstructures topography[J]. Opt. Precision Eng., 1999,7(3):7-13. (in Chinese)[9] AVSET B S, EVENSEN L. The effect of metal field plates on multiguard structures with floating p+ guard rings[J]. Nuclear Instruments and Methods in Physics Research, 1996,A377:397-403.[10] HARPER C A. Electronic Materials and Processes Handbook[M]. America: McGraw-Hill Companies, 2004.[11] 庄同曾,张安康,黄兰芳. 集成电路制造技术[M]. 北京:电子工业出版社:1987. ZHUANG T Z, ZHANG A K, HUANG L F. Microfabrication Technology of Integrated Circuits[M]. Beijing:Publishing House of Electronics Industry, 1987. (in Chinese)[12] BLUMENFELD Y, AUGER F, SAUVESTRE J E. A silicon strip detector array for radioactive beam experiments[J]. Nuclear Instruments and Methods in Physics Research, 1999, A421:471-491.[13] 韩励想,李占奎,靳根明. 用于半导体探测器研制的数字摄影显微系统[J]. 核电子学与探测技术,2009,29(5):945-949. HAN L X, LI ZH K, JIN G M, et al.. The system of digital-image optical microscope in semiconductor particle detector development[J]. Nuclear Electronics and Detection Technology, 2009,29(5):945-949. (in Chinese)[14] 王勇,张继盛,费圭甫. 硅微条粒子探测器[J]. 核电子学与探测技术,1997,17(3):161-164. WANG Y, ZHANG J SH,FEI G F. Silicon microstrip detector for particles[J]. Nuclear Electronics and Detection Technology, 1997,17(3):161-164. (in Chinese)

Views

664

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰