Fracture behavior during pulsed laser irradiating silicon wafer

LIU Jian; LU Jian; NI Xiao-wu; DAI Gang; ZHANG Liang

doi:10.3788/OPE.20111902.0414

您当前的位置：

首页 >

文章列表页 >

Fracture behavior during pulsed laser irradiating silicon wafer

Article | 更新时间：2020-08-12

- Fracture behavior during pulsed laser irradiating silicon wafer
- Optics and Precision Engineering Vol. 19, Issue 2, Pages: 414-420(2011)
- 作者机构：
  
  南京理工大学理学院应用物理系,江苏南京,210094
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111902.0414
  CLC： TN249
- Received：08 October 2010，
  
  Revised：30 October 2010，
  
  Published Online：22 February 2011，
  
  Published：22 February 2011
- 稿件说明：
移动端阅览
刘剑, 陆建, 倪晓武, 戴罡, 张梁. 单晶硅片在脉冲激光作用下的断裂行为[J]. 光学精密工程, 2011,19(2): 414-420

LIU Jian, LU Jian, NI Xiao-wu, DAI Gang, ZHANG Liang. Fracture behavior during pulsed laser irradiating silicon wafer[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 414-420
刘剑, 陆建, 倪晓武, 戴罡, 张梁. 单晶硅片在脉冲激光作用下的断裂行为[J]. 光学精密工程, 2011,19(2): 414-420 DOI： 10.3788/OPE.20111902.0414.

LIU Jian, LU Jian, NI Xiao-wu, DAI Gang, ZHANG Liang. Fracture behavior during pulsed laser irradiating silicon wafer[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 414-420 DOI： 10.3788/OPE.20111902.0414.

摘要

基于脆性材料在激光辐照下的断裂行为

将可控断裂激光切割技术应用于脆性材料的加工。为了分析脉冲激光辐照脆性材料过程及脉冲激光扫描过程中产生的断裂行为机理

采用数值计算方法建立了含有裂纹的三维有限元热弹计算模型。分析了脉冲激光辐照单晶硅片过程中温度场和热应力场的变化情况

并模拟计算了硅片边缘含有裂纹时裂纹尖端应力强度因子的变化。计算结果表明

在激光加热区域前后位置存在两个拉应力区

且激光加热区域靠近硅片边缘位置时

硅片边缘会产生较大拉应力;脉冲激光扫描硅片过程中

裂纹尖端的应力集中现象诱发材料持续开裂并引导裂纹沿激光扫描方向扩展。得到的结果与文献报道的裂纹扩展过程相符。

Abstract

Based on the fracture behavior during laser irradiating brittle materials

a controlling fracture technique was used for cutting brittle materials. In order to investigate the mechanism of fracture behavior during pulsed laser irradiating single silicon

a three-dimensional finite element thermoelastic calculational model which contains a pre-existing crack was established based on the heat transfer theory. The development of the temperature field and thermal stress field were investigated during the pulse duration and the changes of stress intensity factor around a crack tip were analyzed. The simulation results show that there are two tensile stress zones induced by the laser heating zone. When the laser spot is near the edge of the silicon wafer

the larger tensile stress is induced at the edge of the silicon wafer

and when the pulsed laser scans the silicon wafer

the pre-existing crack can induce the fracture to propagate along the moving direction of the laser beam. Obtained results are well coincident with the crack expanding process reported by the literature.

关键词

Keywords

references

崔建丰, 赵晶, 樊仲维,等. 厚硅片的高速激光切片研究 [J]. 光学精密工程,2006,14(5):829-834. CUI J F,ZHAO J, FAN ZH W, et al.. Study on LD-pumped Nd :YAG laser cutter for silicon wafer [J]. Opt.Precision Eng.,2006,14(5):829-834.(in Chinese)[2] 吴东江,张强,郭东明. Al2O3陶瓷薄片CO2连续激光弯曲试验 [J]. 光学精密工程,2009,17(10):2437-2476. WU D J, ZHAN G Q, GUO D M. Experiment on bending of Al2O3 ceramic slice with CO2 CW-laser [J]. Opt. Precision Eng.,2009,17(10):2437-2476. (in Chinese)[3] 王续跃,许卫星,徐文骥,等. 硅片激光弯曲成形的数值模拟与实验 [J]. 光学精密工程,2008,16(4):606-610. WANG X Y, XU W X, XU W J, et al.. Simulation and experiment of laser bending of silicon sheet [J]. Opt. Precision Eng.,2008,16(4):606-610. (in Chinese)[4] TRIANTAFYLLIDIS D. Dual laser beam modification of high alumina ceramics [J].Journal of Laser Application,2003,15(1):49-54.[5] LUMLEY R M. Controlled separation of brittle materials using a laser [J]. American Ceramic Society Bulletin, 1969,48:850-854.[6] TSAI CH H, CHEN H W. Laser cutting of thick ceramic substrates by controlled fracture technique[J]. Journal of Materials Technology, 2003,136:166-173.[7] JUNKE J,WANG X B. A simulation of machining glass by dual CO2-laser beams [J]. Optics＆Laser Technology, 2008, 40:297-301.[8] KONDRA T. Method of splitting non-metallic materials: U S, 5609284 . 1997.[9] BLACK I,CHUA K L. Laser cutting of thick ceramic tile [J]. Optics＆Laser Technology, 1997,29:193-205.[10] SALMAN N,SHEIKH M A, LI L,et al.. Effect of thermal stress on chip-free diode laser cutting of glass [J]. Optics＆Laser Technology, 2009,41:318-327.[11] SHEN ZH, ZHANG SY, LU J, et al.. Mathematical modeling of laser induced heating and melting in solid [J]. Optics＆Laser Technology,2001,33:533-537.[12] CHEN Y B,LU J,NI X W. Analysis of thermal stress damage in single-crystal silicon induced by 1 064 nm long-pulse laser[J]. SPIE, 2007,6835:68351x.[13] ZHU X K, CHAO Y J. Numerical simulation of transient temperature and residual stress in friction stir welding of 304L stainless steel [J]. Journal of Materials Processing Technology, 2004,146:263-272.[14] YAMADA K,UEDA T,HOSOKAWA A,et al.. Thermal damage of silicon wafer in thermal cleaving process with pulsed laser and CW laser [J].SPIE, 2006,6107:61070H.[15] UEDA T,YAMADA K,OISO K,et al.. Thermal stress cleaving of brittle material by laser beam [J]. CIRP Annals-Manufacturing Technology, 2002,51(1):149-152.

Views

1087

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Abnormal behaviors of photovoltaic HgCdTe detectors under intense pulse laser

Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser

Thermal-structural coupled analysis and verification of 2-D mirror gimbal for lunar-based telescope

Temperature characteristics of MEMS stress-testing structure and a stress-suppressing method

Design of bonding layer in lens athermal mount

Related Author

LI Yun-peng

SHI Yu-bin

SHAO Bi-bo

LIN Xin-wei

ZHANG Jian-min

XU Zuo-dong

ZHANG Jian-min

XU Zuo-dong

Related Institution

State Key Laboratory of Laser Interaction with Matter, Northwest Institute of Nuclear Technology

Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

Key laboratory of Thermo-Fluid Science and Engineering of the Ministry of Education, Xi'an Jiaotong University.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰