Numerical simulation of vaporization effect of long pulsed laser interaction with silicon

Zhang Liang; NI Xiao-wu; LU Jian; Liu Jian; Dai Gang

doi:10.3788/OPE.20111902.0437

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Numerical simulation of vaporization effect of long pulsed laser interaction with silicon

Article | 更新时间：2020-08-12

- Numerical simulation of vaporization effect of long pulsed laser interaction with silicon
- Optics and Precision Engineering Vol. 19, Issue 2, Pages: 437-444(2011)
- 作者机构：
  
  南京理工大学理学院,江苏南京,210094
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111902.0437
  CLC： TN249;TN305
- Received：08 October 2010，
  
  Revised：30 October 2010，
  
  Published Online：22 February 2011，
  
  Published：22 February 2011
- 稿件说明：
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张梁, 倪晓武, 陆建, 刘剑, 戴罡. 长脉冲激光与硅相互作用气化过程的数值模拟[J]. 光学精密工程, 2011,19(2): 437-444

Zhang Liang, NI Xiao-wu, LU Jian, Liu Jian, Dai Gang. Numerical simulation of vaporization effect of long pulsed laser interaction with silicon[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 437-444
张梁, 倪晓武, 陆建, 刘剑, 戴罡. 长脉冲激光与硅相互作用气化过程的数值模拟[J]. 光学精密工程, 2011,19(2): 437-444 DOI： 10.3788/OPE.20111902.0437.

Zhang Liang, NI Xiao-wu, LU Jian, Liu Jian, Dai Gang. Numerical simulation of vaporization effect of long pulsed laser interaction with silicon[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 437-444 DOI： 10.3788/OPE.20111902.0437.

摘要

为了研究毫秒量级脉宽激光与半导体材料的相互作用机理

建立了一维有限元模型

对长脉冲激光与硅相互作用的气化现象进行了数值模拟。在计算中

利用热焓法处理了固-液相变过程

并根据热流方程考虑了气化产生的能量损失。在入射激光功率密度相同的条件下

定量地描绘了不同脉宽激光辐照材料的温度分布

前表面的温度历史

以及气化速度和气化深度

并估算出气化深度为0.5 m时

物质蒸汽使激光产生光学自聚焦现象的激光功率阈值仅为0.2 W

此阈值远小于长脉冲激光的功率。因此

在长脉冲激光与硅材料相互作用过程中

气化的物质蒸汽会使后续激光产生光学自聚焦现象。得到的结果可为长脉冲激光的应用提供理论依据。

Abstract

To explore the mechanism of the long-pulse laser interaction with semiconductor materials

a one-dimensional finite element calculational model was established to investigate the vaporization effect of the long-pulse laser interaction with the silicon. In the calculation

Enthalpy method was used to resolve the process of solid-liquid phase change

and the heat flux equation was used to analyze the energy loss of vaporization. With the certain incident laser power density and different pulse widths

the long pulse laser interaction with the silicon in the process of melting and vaporization phenomena was simulated. The vaporization velocity

temperature evolvement

and the effect of vaporization on ablation depth during and after the laser irradiation were emphatically analyzed. Furthermore

the atomic vapor induced self-focusing threshold by laser transmission was estimated to be about 0.2 W when vaporization depth was about 0.5 m

which was far less than the long-pulse laser power. Therefore

the follow-up laser will cause optical self-focusing phenomenon by vaporization in the long pulse laser interaction with the silicon

obtained results can provide the theoretical basis for the research on the mechanism of the laser interaction with the silicon.

关键词

Keywords

references

倪晓武,沈中华,陆建. 强激光对光电器件及半导体材料的破坏研究 [J]. 光电子激光,1997,8(6):487-492. NI X W, SHENZ H, LU J. Study of laser destruction for optoelectronic device and semiconductor material[J]. Journal of OptoelectronicLaser, 1997,8(6):487-492.(in Chinese)[2] 丁玮环. 长脉冲高能激光与半导体材料的热作用分析 [J]. 红外与激光工程,2007,36(S1):332-335. DDING W H. Analyse on the thermal interaction of the long pulse high power laser and semiconductor [J]. Infrared and Laser Engineering, 2007,36(S1):332-335. (in Chinese)[3] MIOTELLO A,KELLY R. Critical assessment of thermal models for laser sputtering at high flounces [J]. Applied Physics Letters, 1995, 67(24):3335- 3337.[4] TAN X Y,ZHANG D M. Vaporization effect studying on high-power nanosecond pulsed [J]. Physica B: Condensed Matter, 2005, 358(1-4):86-92.[5] LIU D, ZHANG D M. Vaporization and plasma shielding during high power nanosecond laser ablation of silicon and nickel [J]. Chinese Physics Letter, 2008,25(4):1368-1371.[6] SHA T, WU B X. Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon [J]. Journal of Applied Physics, 2009,106:123507.[7] CHEN Y. Analysis of thermal stress damage in single-crystal silicon induced by 1064 nm long-pulse laser[J]. SPIE, 2007,6835:68351X.[8] ASCHERON C E. Self-focusing: Past and Present[M]. Springer New York, 2009.[9] SCHNEIDER M. New experimental approach to study laser matter interaction during drilling in percussion regime[J].Journal of Laser Micro/Nanoengineering , 2007,2(2):117-122.[10] YOO J H,JEONG S H. Explosive change in crater properties during high power nanosecond laser ablation of silicon [J]. Journal of Applied Physics, 2000,88(3):1638-1649.[11] 沈中华,倪晓武. 激光对半导体材料热作用理论计算[J]. 光电子激光,1998,9(4):344- 346. SHEN Z H,NI X W. Theoretical calculation for thermal effect of the semiconductors induced by the Laser Pulse [J].Journal of Optoelectroniclaser 2000,88(3):1638-1649.

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