Transient S-parameters of millimeter-wave MEMS switch

LIAO Xiao-ping; XIAO Jian-bin

doi:10.3788/OPE.20111903.0593

您当前的位置：

首页 >

文章列表页 >

Transient S-parameters of millimeter-wave MEMS switch

Article | 更新时间：2020-08-12

- Transient S-parameters of millimeter-wave MEMS switch
- Optics and Precision Engineering Vol. 19, Issue 3, Pages: 593-597(2011)
- 作者机构：
  
  东南大学 MEMS教育部重点实验室,江苏南京 210096
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111903.0593
  CLC： TN631
- Received：26 March 2010，
  
  Revised：07 May 2010，
  
  Published Online：22 March 2011，
  
  Published：22 March 2011
- 稿件说明：
移动端阅览
廖小平, 肖建斌. 毫米波MEMS开关S参数在开关过程中的瞬态变化[J]. 光学精密工程, 2011,19(3): 593-597

LIAO Xiao-ping, XIAO Jian-bin. Transient S-parameters of millimeter-wave MEMS switch[J]. Editorial Office of Optics and Precision Engineering, 2011,19(3): 593-597
廖小平, 肖建斌. 毫米波MEMS开关S参数在开关过程中的瞬态变化[J]. 光学精密工程, 2011,19(3): 593-597 DOI： 10.3788/OPE.20111903.0593.

LIAO Xiao-ping, XIAO Jian-bin. Transient S-parameters of millimeter-wave MEMS switch[J]. Editorial Office of Optics and Precision Engineering, 2011,19(3): 593-597 DOI： 10.3788/OPE.20111903.0593.

摘要

研究了静电执行的电容式并联毫米波MEMS开关的

参数在开关过程中的瞬态变化。以一个电容式并联毫米波MEMS开关为实例

采用已有的开关一维力学动态模型

建立了开关过程中开关梁与介质层之间的间隙与时间的关系;通过HFSS电磁仿真软件

得到开关

参数在开关过程中的瞬态变化。结果显示

在开关下拉过程中(用时约9.4 s)

插入损耗

先缓慢减小(从Up态稳定值-0.20 dB缓慢减小到-1.02 dB需时9.11 s

占开关下拉时间的97%)

但在下拉时间末段迅速减小;在开关释放过程中(用时约20 s)

在初段就迅速增大(从Down态的稳定值-20.1 dB迅速增加到-1.16 dB只需1.09 s

占开关释放时间的5.5%)。结果表明

开关从导通信号到阻隔信号的转换时间约为开关的下拉时间;开关从阻隔信号到导通信号的转换时间要比开关的释放时间小一个数量级。

Abstract

The transient

-parameters of a capacitive shunt and electrostatically actuated millimetre-wave switch were researched.The transient change of these parameters during switching in the gap between switch beam and dielectric layer was derived by a one-dimension mechanical dynamic model from a published paper. Then

the transient change in the gap was used for simulating the transient

-parameters during switching in HFSS software. Finally

this method was applied to a specific switch. Obtained results show that the inserting loss

decreases slowly until the end of the pull-in process (from steady value -0.20 dB in Up-state to -1.02 dB over 9.11 s

97% of the pull-in time)

and it increases quickly to nearly the ultimate value at the beginning of the release process (from steady value -20.1 dB in down-state to -1.16 dB over 1.09 s

5.5% of the release time).The transition time from a passing RF signal to a blocking RF signal is about the time of pull-in

and the transition time from a blocking RF signal to a passing RF signal is one order of magnitude less than the releasing time.

关键词

Keywords

references

JANG Y H, LEE Y S, KIM Y K, et al.. High isolation RF MEMS contact switch in V-and W-bands using two directional motions[J]. Electronics Letters, 2010, 46(2):153-154.[2] CHAN K Y, RAMER R. A novel RF MEMS switch with novel mechanical structure modeling[J]. Journal of Micromechanics and Microengineering, 2010, 20(1):1-9.[3] GONG S B, SHEN H, BARKER N S. Study of broadband cryogenic DC-contact RF MEMS switches[J]. IEEE Transactions on Microwave Theory and Techniques, 2009,57(12):3442-3449.[4] MULDAVIN J B,REBEIZ G M.High-isolation CPW MEMS shunt switches-part 1:modeling[J]. IEEE Transactions on Microwave Theory and Techniques, 2000,48(6):1045-1052.[5] QIAN J, CHANG H P, CETINER B A, et al.. RF MEMS asymmetric capacitive switch with high-isolation at selected low-microwave frequency[J]. Microwave and Optical Technology Letters, 2007,49(3):702-706.[6] SIMION S.Modeling and design aspects of the MEMS switch . 2003 International Semiconductor Conference,Vols 1 and 2,Proceedings. 2003:125-128.[7] BUCCELLA C, FELIZIANI M, MANZI G. Circuit modeling of RF capacitive MEMS switch . Proceedings of the IEEE International Symposium on Industrial Electronics 2005,2005:1117-1121.[8] YUAN X L, HUANG Q A, LIAO X P. Analysis of electromagnetic interference of a capacitive RF MEMS switch during switching[J]. Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,2008,14(3):349-360.[9] HOWE R T, MULLER R S. Resonan-microbridge vapor sensor[J].IEEE Transactions on Electron Devices, 1986,33(4):499-506.[10] VEIJOLA T, KUISMA H, LAHDENPERA J. Model for gas film damping in a silicon accelerometer . Proceedings of international Conference on Solid State Sensors and Actuators,Vol. 2.,1997:1097-1100.

Views

184

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰