Junction temperature measurement of high power diode lasers

TIAN Zhen-hua; SUN Cheng-lin; CAO Jun-sheng; GAO Feng-li; NING Yong-qiang; WANG Li-jun

doi:10.3788/OPE.20111906.1244

您当前的位置：

首页 >

文章列表页 >

Junction temperature measurement of high power diode lasers

Article | 更新时间：2020-08-12

- Junction temperature measurement of high power diode lasers
- Optics and Precision Engineering Vol. 19, Issue 6, Pages: 1244-1249(2011)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
  2. 中国科学院研究生院北京,100039
  3. 吉林大学电子科学与工程学院,吉林长春,130023
  4. 吉林大学物理学院,吉林长春,130023
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111906.1244
  CLC： TN248.4
- Received：16 March 2010，
  
  Revised：28 June 2010，
  
  Published Online：25 June 2011，
  
  Published：25 June 2011
- 稿件说明：
移动端阅览
田振华, 孙成林, 曹军胜, 郜峰利, 宁永强, 王立军. 准连续输出大功率半导体激光器的结温测试[J]. 光学精密工程, 2011,19(6): 1244-1249

TIAN Zhen-hua, SUN Cheng-lin, CAO Jun-sheng, GAO Feng-li, NING Yong-qiang, WANG Li-jun. Junction temperature measurement of high power diode lasers[J]. Editorial Office of Optics and Precision Engineering, 2011,19(6): 1244-1249
田振华, 孙成林, 曹军胜, 郜峰利, 宁永强, 王立军. 准连续输出大功率半导体激光器的结温测试[J]. 光学精密工程, 2011,19(6): 1244-1249 DOI： 10.3788/OPE.20111906.1244.

TIAN Zhen-hua, SUN Cheng-lin, CAO Jun-sheng, GAO Feng-li, NING Yong-qiang, WANG Li-jun. Junction temperature measurement of high power diode lasers[J]. Editorial Office of Optics and Precision Engineering, 2011,19(6): 1244-1249 DOI： 10.3788/OPE.20111906.1244.

摘要

基于大功率半导体激光器的热传导模型提出了一种测量准连续输出大功率半导体激光器结温的方法。实验通过测量980 nm大功率半导体激光器在不同电脉冲宽度(5~200 s)下的时域光谱和输出特性d/dT=0.3 nm/℃来确定它的结温;同时

根据热传导模型推导出准连续工作条件下结温的近似解析表达式来验证测量得到激光器的结温。结果表明

实验测量结果和通过解析表达式理论计算结果之间符合得很好。所提出的解析表达式可准确预测大功率半导体激光器在准连续工作条件下的结温而无需测量时域光谱

是一种简便快速的预测方法。

Abstract

A measuring method for the junction temperature of Quasi-Continuous Wave(QCW) and high power semiconductor laser diodes was put forward based on the thermal model of a high power semiconductor laser.In experiments

the different spectra and output powers of a 980 nm high power semiconductor laser diode under different pulse widths(5~200 s) were measured and the junction temperature was obtained by the relationship of d/dT=0.3 nm/℃. Furthermore

an approximate analytical equation was deduced on the basis of the thermal model to calculate the junction temperature. The experiment shows that the measured results are in a good agreement with the analytical results.In conclusion

the equation is a convenient method for predicting the junction temperature without measuring the spectrum.

关键词

Keywords

references

ABDELKADER H I,HAUSIEN H H,MARTIN J D. Temperature rise and thermal rise-time measurements of a semiconductor laser diode [J]. Rev. Sci. Instrum, 1992, 63(3):2004-2007.[2] SETSUKO M, HIROSHI N. Adding a heat bypass improves the thermal characteristics of a 50 m spaced 8-beam laser diode array [J]. J. Appl. Phys., 1992, 72(6): 2514-2516.[3] EPPERLEIN P W. Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes . Proceedings of 17th International Symposium of Gallium Arsenide and Related Compounds, IOP Conference Series,1990, 633:112.[4] EPPERLEIN P W, BONA G L. Influence of the vertical structure on the mirror facet temperature of visible GaInP quantum well laser [J]. Appl. Phys. Lett., 1993, 62(24):3074-3076.[5] HALL D C, GOLDBERG L, MEHUYS D. Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe [J]. Appl. Phys. Lett., 1992, 61(4):384-386.[6] GU Y M, NADARAJAH N. A non-contact method for determining junction temperature of phosphor-converted white LEDs [J]. SPIE, 2004, 5187:107-114.[7] SATORU T. Temperature distribution along the striped active region in high-power GaAlAs visible lasers [J]. J. Appl. Phys, 1985, 58(3):1124-1128.[8] RYU H Y, HA K H, CHAE J H,et al.. Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics [J]. SPIE, 2005, 5738:238-244.[9] FRIEDRICH B. Present technology, industial applications and future prospects of high power diode lasers[J].SPIE,2002,4762:1-15.[10] 顾媛媛,冯广智,单肖楠,等. 808nm和980nm半导体激光迭阵波长耦合技术光学[J]. 精密工程,2009,17(1),8-13. GU Y Y, FENG G ZH, SHAN X N,et al.. 808 nm and 980 nm high power laser diode stack with wavelength coupling[J].Opt.Precision Eng., 2009,17(1),8-13.[11] JOACHIM PIPREK.Semiconductor Optoelectronic Device[M]. Elsevier Science, 2003:21-23.

Views

443

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research on packaging technology of high power blue semiconductor laser bar

Short coherent light source based on current modulation in semiconductor lasers

Design of control system for 1470-nm high-power semiconductor laser lipolysis device

Structural design and ANSYS thermal simulation for semiconductor laser system

Large current nanosecond pulse generating circuit for driving semiconductor laser

Related Author

HAO Mingming

TAO Chunyan

GAO Junjian

GAO Xiang

WANG Qi

ZHOU Yong

Xiao-li GUO

Yang LI

Related Institution

School of Information and Engineering， Guangdong University of Technology

Dongguan Institute of Opto-electrical Peking University

School of Materials and Energy， Guangdong University of Technology

School of Optoelectronics，University of Chinese Academy of Sciences

Aerospace Information Research Institute，Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰