Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array

ZHANG Xing; NING Yong-qiang; ZENG Yu-gang; QIN Li; LIU Yun; WANG Li-Jun

doi:10.3788/OPE.20111909.2014

您当前的位置：

首页 >

文章列表页 >

Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array

Article | 更新时间：2020-08-12

- Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array
- Optics and Precision Engineering Vol. 19, Issue 9, Pages: 2014-2022(2011)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111909.2014
  CLC： TN248.4
- Received：31 December 2010，
  
  Revised：25 January 2011，
  
  Published Online：26 September 2011，
  
  Published：26 September 2011
- 稿件说明：
移动端阅览
张星, 宁永强, 曾玉刚, 秦莉, 刘云, 王立军. 980 nm高功率垂直腔面发射激光列阵的单元结构优化[J]. 光学精密工程, 2011,19(9): 2014-2022

ZHANG Xing, NING Yong-qiang, ZENG Yu-gang, QIN Li, LIU Yun, WANG Li-Jun. Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2014-2022
张星, 宁永强, 曾玉刚, 秦莉, 刘云, 王立军. 980 nm高功率垂直腔面发射激光列阵的单元结构优化[J]. 光学精密工程, 2011,19(9): 2014-2022 DOI： 10.3788/OPE.20111909.2014.

ZHANG Xing, NING Yong-qiang, ZENG Yu-gang, QIN Li, LIU Yun, WANG Li-Jun. Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2014-2022 DOI： 10.3788/OPE.20111909.2014.

摘要

为了提高980 nm垂直腔面发射激光器(VCSEL)列阵的整体性能

对列阵单元器件的分布布拉格反射镜(DBR)的反射率进行了优化。分析了DBR的反射率与阈值电流

输出功率及转换效率之间的关系

在维持较低阈值电流的前提下适当调节了N-DBR的反射率

使单元器件斜率效率得到了有效提高

进而改善了VCSEL列阵的整体输出特性。优化DBR反射率后研制出的包含64个单元的VCSEL列阵器件在注入电流为6 A时的连续输出功率为2.73 W;在脉宽为100 ns

重复频率为100 Hz的130 A脉冲电流驱动下输出功率达到115 W;包含300个单元的列阵器件在注入电流为18 A时

连续输出功率达到5.26 W。对N-DBR反射率进行优化后

VCSEL列阵的整体输出特性得到了有效改善。

Abstract

The reflectivity of a Distributed Bragg Reflector (DBR) was optimized to improve the output characteristics of a 980 nm Vertical-cavity Surface-emitting Laser (VCSEL) array.The relationship among the reflectivity of N-DBR

threshold current

output power and wall-plug efficiency was analyzed.Then

the reflectivity of N-DBR was adjusted to achieve higher slope efficiency in a relative low threshold current and to improve the overall output characteristics of the VCSEL array.After N-DBR reflectivity optimization

the developed VCSEL array including 64 elements can offer a CW output power of 2.73 W under the injected current of 6 A and a pulse output power of 115 W under the pulse drive current of 130 A

a pulse width of 100 ns and a repetition frequency of 100 Hz. Furthermore

the VCSEL array including 300 elements can provide a CW output power of 5.26 W under the injected current of 18 A. It concludes that the performance of VCSEL array has been improved by N-DBR reflectivity optimization.

关键词

Keywords

references

KOYAMA F. VCSELs: their 30 years history and new challenges [J]. SPIE,2008,7135:7135J(1-10).[2] KOYAMA F, MIYAMOTO T. Recent advances of VCSEL technologies. In IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007. [3] JI C, WANG J Y, SODERSTROM D, et al.. High volume 850nm oxide VCSEL development for high bandwidth optical data link applications [J]. SPIE,2009,7229:722904(1-11).[4] MICHALZIK R, GRABHERR M, JAEGER R, et al.. Progress in high-power VCSELs and arrays [J]. SPIE,1998,3419:187-195.[5] MILLER M, GRABHERR M, KING R, et al.. Improved output performance of high-power VCSELs [J]. IEEE Journal on Selected Topics in Quantum Electronics, 2001, 7(2):210-216.[6] YAN C L, NING Y Q, QIN L, et al.. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics [J]. Semiconductor Science and Technology, 2004, 17(19): 685-689.[7] HOFMANN W, GORBLICH M, ORTSIEFER M, et al.. Monolithic 2D high-power arrays of long-wavelength VCSELs [J]. SPIE,2008,6908:690807.[8] SEURIN J F, GHOSH C L, KHALFIN V, et al.. High-power high-efficiency 2D VCSEL arrays [J]. SPIE,2008,6908:690808.[9] SEURIN J F, GHOSH C L, KHALFIN V, et al.. High-power vertical-cavity surface-emitting arrays [J]. SPIE,2008,6876:68760D. [10] SEURIN J F, XU G Y, KHALFIN V, et al.. Progress in high-power high-efficiency VCSEL arrays [J]. SPIE,2009,7229:722903.[11] GESKE J, WANG C, MACDOUGAL M, et al.. High Power VCSELs for miniature optical sensors [J]. SPIE, 2010, 7615: 76150E.[12] SEURIN J F, XU G Y, WANG Q, et al.. High-brightness pump sources using 2D VCSEL arrays [J]. SPIE,2010,7615:76150F.[13] ZHANG Y, NING Y Q, QIN L, et al.. High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter[J]. Applied Optics,2010,49(19):2793-2797.[14] 孙艳芳,金珍花,宁永强,等. 高功率底发射VCSELs的制作与特性研究[J]. 光学精密工程,2004,12(5):449-453. SUN Y F, JIN ZH H, NING Y Q, et al.. Fabrication and experimental characterization of high power bottom-emitting VCSELs[J]. Opt. Precision Eng., 2004,12(5):449-453. (in Chinese)[15] MACDOUGAL M, DAPKUS P, BOND A, et al.. Design and fabrication of VCSELs with AlxOy-GaAs DBRs [J]. IEEE Journal of Selected Topics in Quantum Electronics, 1997, 3(3): 905-915.[16] SHERRIFF R, FELD S, LOEHR J. Comparison of exact and approximate optical designs of graded-interface distribute bragg reflectors [J]. IEEE Journal of Selected Topics in Quantum Electronics, 1999, 5(3): 582-589.[17] LI T, NING Y Q, HAO E J. Design and optimization of DBR in 980 nm bottom-emitting VCSEL [J]. Science in China Series F: Information Sciences, 2009, 52(7):1266-1271.[18] GRABHERR M, MILLER M, JAGER R, et al.. High-power VCSELs: single devices and densely packed 2-D-arrays [J]. IEEE Journal of Selected Topics in Quantum Electronics, 1999, 5(3): 495-502.[19] COLDREN L A, CORZINE S W. Diode Lasers and Photonic Integrated Circuits [M]. New York: Wiley 1995.

Views

291

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research on packaging technology of high power blue semiconductor laser bar

Short coherent light source based on current modulation in semiconductor lasers

Design of control system for 1470-nm high-power semiconductor laser lipolysis device

Structural design and ANSYS thermal simulation for semiconductor laser system

Large current nanosecond pulse generating circuit for driving semiconductor laser

Related Author

HAO Mingming

TAO Chunyan

GAO Junjian

GAO Xiang

WANG Qi

ZHOU Yong

Xiao-li GUO

Yang LI

Related Institution

School of Information and Engineering， Guangdong University of Technology

Dongguan Institute of Opto-electrical Peking University

School of Materials and Energy， Guangdong University of Technology

School of Optoelectronics，University of Chinese Academy of Sciences

Aerospace Information Research Institute，Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰