High-power vertical cavity surface emitting laser array in series structure

SHI Jing-jing; QIN Li; LIU Di; PENG Hang-yu; CAO Jun-sheng; YANG Ye; NING Yong-qiang; LIU Y

doi:10.3788/OPE.20111910.2309

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High-power vertical cavity surface emitting laser array in series structure

Article | 更新时间：2020-08-12

- High-power vertical cavity surface emitting laser array in series structure
- Optics and Precision Engineering Vol. 19, Issue 10, Pages: 2309-2313(2011)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20111910.2309
  CLC： TN248.1
- Received：31 December 2010，
  
  Revised：17 February 2011，
  
  Published Online：27 October 2011，
  
  Published：25 October 2011
- 稿件说明：
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史晶晶, 秦莉, 刘迪, 彭航宇, 曹军胜, 杨晔, 宁永强, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的串接结构[J]. 光学精密工程, 2011,19(10): 2309-2313

SHI Jing-jing, QIN Li, LIU Di, PENG Hang-yu, CAO Jun-sheng, YANG Ye, NING Yong-qiang, LIU Yun, WANG Li-jun. High-power vertical cavity surface emitting laser array in series structure[J]. Editorial Office of Optics and Precision Engineering, 2011,19(10): 2309-2313
史晶晶, 秦莉, 刘迪, 彭航宇, 曹军胜, 杨晔, 宁永强, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的串接结构[J]. 光学精密工程, 2011,19(10): 2309-2313 DOI： 10.3788/OPE.20111910.2309.

SHI Jing-jing, QIN Li, LIU Di, PENG Hang-yu, CAO Jun-sheng, YANG Ye, NING Yong-qiang, LIU Yun, WANG Li-jun. High-power vertical cavity surface emitting laser array in series structure[J]. Editorial Office of Optics and Precision Engineering, 2011,19(10): 2309-2313 DOI： 10.3788/OPE.20111910.2309.

摘要

为了在不提高驱动电流的前提下增大垂直腔面发射激光器的输出功率

提出了一种将多个垂直腔面发射激光器芯片串接在一起的结构。首先

将垂直腔面发射激光器芯片焊接在氮化铝陶瓷热沉上

接着用金丝引线的方法以串联方式将芯片连接在一起。分别测试了串接4个、2个和单个芯片器件的微秒脉冲输出功率和纳秒脉冲输出功率

其分别为775

416

217 mW和18.9

9.8

5 W

测试结果显示串接4个和2个芯片器件的输出功率分别约为单个芯片输出功率的4倍和2倍。串接多个芯片器件的发射光谱半高宽(FWHM)比单个器件的略宽

但是可以通过选择均一性良好的芯片来解决这一问题。实验显示

串接结构可以实现在不提高驱动电流的条件下大幅度提高输出功率。

Abstract

For increasing the output powers without improving drive currents to high power Vertical Cavity Surface Emitting Lasers(VCSELs)

a VCSEL in series structure was presented. First

the VCSEL chips were soldered on a AlN ceramic heat sink

then the chips were connected by a wire bonding in series. The output powers of four-chip devices in series

two-chip devices in series and a single device were measured under microsecond and nanosecond pulses

which are 775

416

217 mW and 18.9

9.8

5 W

respectively. Test results show that the output powers of the first two kinds of devices in series are about 4 times and twice that of the single device. Moreover

the Full Width at Half Maximum(FWHM) of multiple-chip devices in series is slightly wider than that of the single device

which can be improved by choosing good uniformity cascade chips. In conclusion

the VCSEL in series structure can increase the output power without improving the drive current.

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Keywords

references

参考文献： [1].Yung-Cheng Lee, Stanley E. Swirhun, Winston S. Fu, et al. Thermal Management of VCSEL-Bases Optoelectronic Modules[J].IEEE Transactions on Components, Packaging, and Manufacturing Technology-Part B, 1996, 19(3): 540-547.[2]. Dennis G. Deppe, Diana L. Huffaker, Tchang-hun Oh, et al. Low-Threshold Vertical-Cavity Surface-Emitting Lasers Based on Oxide-Confinement and High Contrast Distributed Bragg Reflectors[J]. IEEE Quantum Electronics, 1997, 3(3):893-904.[3].李再金,胡黎明，王烨等。808 am含铝半导体激光器的腔面镀膜[J]. 光学精密工程, 2010, 18（6）: 1258-1262.LI Z J, HU L M, WANG Y, et al. Facet coating for 808nm Al-containing semiconductor laser diodes[J]. Optics and Precision Engineering, 2010, 18(6): 1258-1262. (in chinses)[4].顾媛媛，冯广智，单肖楠等。 808 nm和980 nm半导体激光迭阵波长耦合技术[J]. 光学精密工程， 2009， 17（1）： 8-13. GU Y Y, FENG G Z, SHAN X N, et al. 808 nm and 980nm high power laser diode stack with wavelength coupling[J]. Optics and Precision Engineering, 2009, 17(1): 8-13. (in chinses)[5]. 王祥鹏，梁雪梅，李再金等。880 nm半导体激光器列阵及光纤耦合模块[J].光学精密工程，2010,18（5）：1021-1027. WANG X P, LIANG X M, LI Z J, st al. 880nm semiconductor laser diode arrays and fiber coupling module[J].Optics and Precision Engineering, 2010, 18(5): 1021-1027. (in chinses)[6]. Shih-Tsang Sua, Shiang-Feng Tang, Tzu-Chiang Chena, st al. Temperature dependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed Bragg reflectors: reflectivity and beam profile analyses[J]. Proc. of SPIE, 2006, 6132: 61320L.[7]. Chia-Lung Tsai, Feng-Ming Lee, Fu-Yi Cheng, st al. Silicon Oxide-Planarized Single-Mode 850-nmVCSELs With TO Package for 10 Gb/s Data Transmission[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26(5): 304-307.[8].王祥鹏，李再金，刘云等. 半导体激光器列阵的smile效应与封装技术[J]. 光学精密工程，2010,18（3）： 552-557。(in chinses) WANG X P, LI Z J, LIU Y, st al. Smile effect and package technique for diode laser arrays[J]. Optics and Precision Engineering, 2010, 18(3): 552-557.[9].丛梦龙，李黎，崔艳松等。控制半导体激光器的高稳定度数字化驱动电源的设计[J]. 光学精密工程，2010,18（7）：1629-1636。 CONG M L, LI L, CUI Y S, st al. Design of high stability digital control driving system for semiconductor laser[J]. Optics and Precision Engineering, 2010, 18(7): 1629-1636. (in chinses)[10]. 陈彦超，赵柏泰，李伟. 用于纳秒级窄脉冲工作的大功率半导体激光器模块[J]. 光学精密工程，2009,17（4）：695-700. CHEN Y C, ZHAO B W, LI W. High peak power semiconductor laser module for producing nanosecond pulse[J]. Optics and Precision Engineering, 2009, 17(4): 695-700. (in chinses)

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