Forecast of structure sidewall profiles for z-cut quartz after anisotropic wet etching

XIE Li-qiang; XING Jian-chun; WANG Hao-xu; DONG Pei-tao; WU Xue-zhong

doi:10.3788/OPE.20122002.0352

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Forecast of structure sidewall profiles for z-cut quartz after anisotropic wet etching

Article | 更新时间：2020-08-12

- Forecast of structure sidewall profiles for z-cut quartz after anisotropic wet etching
- Optics and Precision Engineering Vol. 20, Issue 2, Pages: 352-359(2012)
- 作者机构：
  
  1. 国防科技大学机电工程与自动化学院,湖南长沙,410072
  2. 解放军理工大学工程兵工程学院,江苏南京,210007
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20122002.0352
  CLC： TN305.1
- Received：29 August 2011，
  
  Revised：27 October 2011，
  
  Published Online：25 February 2012，
  
  Published：25 February 2012
- 稿件说明：
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谢立强, 邢建春, 王浩旭, 董培涛, 吴学忠. 各向异性湿法刻蚀 z切石英后结构侧壁形貌的预测[J]. 光学精密工程, 2012,20(2): 352-359

XIE Li-qiang, XING Jian-chun, WANG Hao-xu, DONG Pei-tao, WU Xue-zhong. Forecast of structure sidewall profiles for z-cut quartz after anisotropic wet etching[J]. Editorial Office of Optics and Precision Engineering, 2012,20(2): 352-359
谢立强, 邢建春, 王浩旭, 董培涛, 吴学忠. 各向异性湿法刻蚀 z切石英后结构侧壁形貌的预测[J]. 光学精密工程, 2012,20(2): 352-359 DOI： 10.3788/OPE.20122002.0352.

XIE Li-qiang, XING Jian-chun, WANG Hao-xu, DONG Pei-tao, WU Xue-zhong. Forecast of structure sidewall profiles for z-cut quartz after anisotropic wet etching[J]. Editorial Office of Optics and Precision Engineering, 2012,20(2): 352-359 DOI： 10.3788/OPE.20122002.0352.

摘要

基于石英晶体各晶面的湿法刻蚀速率

研究了石英微结构侧壁形貌的预测方法

讨论了各向异性湿法刻蚀石英的规律。首先

总结了石英各主要晶面的相对刻蚀速率

分别绘制了

x、y

族刻蚀速率矢量图。然后

在掩模层的边缘处

通过绘制相应的晶面刻蚀速率矢量图

得到各速率矢量的晶面线

晶面线所围成的最小轮廓即是石英微结构的刻蚀形貌。最后

利用该方法预测了

向和

向石英梁的侧壁形貌。在70 ℃的氢氟酸和氟化铵混合溶液内刻蚀5 h

制作了厚度均为500 m的

向和

向两种石英微梁。结果显示

向梁的-x向侧壁有一均匀整齐的晶棱

棱高210 m

而+

向侧壁平滑。

向梁的侧壁均有晶棱

向晶棱较大

棱高为450 m

-y

向晶棱棱高为240 m。所制作梁的侧壁形貌与预测结论基本吻合

验证了预测方法的正确性。基于该方法可在石英微结构的设计阶段

通过引入工艺因素对微结构进行优化。

Abstract

In order to characterize the anisotropic wet etching rule of quartz crystals

a method to forecast the sidewall profiles of quartz microstructures was studied based on wet etching rates of quartz crystal planes. First

etching rates of quartz crystal planes were summarized and the etching rate vector graphs of crystal planes were plotted for

and

groups. Then

the plane lines denoting their crystal planes were obtained by plotting etching rate vector graphs at each edge of a mask

and the etching shape was the minimum profile enclosed by plane lines. Finally

sidewall profiles of quartz beams at

and

directions were forecasted according to this method. An

direction quartz micro-beam and a

direction quartz micro-beam with a thickness of 500 m were fabricated after 5 h wet etching process in a mixture of hydrofluoric acid and ammonium fluoride at 70 ℃. Experimental results indicate that -

sidewall of the

direction micro-beam presents a crystal facet with a height of 210 m and +

sidewall is smooth; and crystal facets with the height of 450 m and 240 m appear on

sidewalls of

direction micro-beam respectively. These sidewall profiles of the beams are in agreement with the analysis results

which validates the forecasting method of wet etching profile. Results demonstrate that the quartz micromachined structure can be optimized by introducing fabrication processes based on the proposed method in designed steps.

关键词

Keywords

references

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