Piezoresistive pressure sensors for harsh environments

SAN Hai-sheng; SONG Zi-jun; WANG Xiang; ZHAO Yan-li; YU Yu-xi

doi:10.3788/OPE.20122003.0550

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Piezoresistive pressure sensors for harsh environments

Article | 更新时间：2020-08-12

- Piezoresistive pressure sensors for harsh environments
- Optics and Precision Engineering Vol. 20, Issue 3, Pages: 550-555(2012)
- 作者机构：
  
  1. 厦门大学物理与机电工程学院机电工程系, 福建厦门361005
  2. 厦门大学萨本栋微纳米技术研究院微机电中心, 福建厦门361005
  3. 厦门大学材料学院材料科学与工程系, 福建厦门361005
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20122003.0550
  CLC： TP212.12
- Received：21 October 2011，
  
  Revised：24 November 2011，
  
  Published Online：22 March 2012，
  
  Published：22 March 2012
- 稿件说明：
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伞海生, 宋子军, 王翔, 赵燕立, 余煜玺. 适用于恶劣环境的MEMS压阻式压力传感器[J]. 光学精密工程, 2012,(3): 550-555

SAN Hai-sheng, SONG Zi-jun, WANG Xiang, ZHAO Yan-li, YU Yu-xi. Piezoresistive pressure sensors for harsh environments[J]. Editorial Office of Optics and Precision Engineering, 2012,(3): 550-555
伞海生, 宋子军, 王翔, 赵燕立, 余煜玺. 适用于恶劣环境的MEMS压阻式压力传感器[J]. 光学精密工程, 2012,(3): 550-555 DOI： 10.3788/OPE.20122003.0550.

SAN Hai-sheng, SONG Zi-jun, WANG Xiang, ZHAO Yan-li, YU Yu-xi. Piezoresistive pressure sensors for harsh environments[J]. Editorial Office of Optics and Precision Engineering, 2012,(3): 550-555 DOI： 10.3788/OPE.20122003.0550.

摘要

为了消除潮湿、酸碱、静电颗粒等恶劣环境对压力传感器压敏电阻的影响

提出了一种新型结构的压阻式压力传感器。该传感器将压敏电阻置于应力薄膜的下表面并通过阳极键合技术密封在真空压力腔中

从而减少了外界环境对压敏电阻的影响。介绍了此种压力传感器的工作原理

使用ANSYS软件并结合有限元方法模拟了压敏薄膜在压力作用下的应力分布情况。最后

利用微机电系统(MEMS)技术成功制作出了尺寸为1.5 mm1.5 mm500 m的压阻式压力传感器。用压力检测平台对该压力传感器进行了测试

结果表明

在25~125℃

其线性度小于2.73%

灵敏度约为20 mV/V-MPa

满足现代工业使用要求。

Abstract

To increase the stabilization and reliability of piezoresistive pressure sensors working in harsh environments with harsh acids

alkalis

corrosive salts

and other destructive substances such as electrostatic particles and damp

a novel piezoresistive pressure sensor was presented. The innovation of the sensor was that the sensing elements of the sensor were fabricated in the lower surface of a silicon diaphragm and were sealed in a vacuum pressure cavity by silicon-glass bonding process. The work principle of this pressure sensor was introduced. Then

Finite Element Method and ANSYS soft were used to simulate the stress distribution of the diaphragm. Finally

the micro-electro-mechanical System(MEMS) technology was used to fabricate a pressure sensor with the dimension of 1.5 mm1.5 mm500 m. The measurement results by a pressure test platform show that the sensitivity of the sensor is about 20 mV/V-MPa

and its maximum nonlinearity is 2.73% FSS

which meets the requirements of the modern industrial applications.

关键词

Keywords

references

王宏亮,宋娟,冯德全,等. 应用于特殊环境的光纤光栅温度压力传感器 [J]. 光学精密工程, 2011, 19(3):545-550. WANG H L,SONG J,FENG D Q, et al.. High temperature-pressure FBG sensor applied to special environments [J]. Opt. Precision Eng., 2011,19(3): 545-550. (in Chinese)[2] 阙瑞义,朱荣,刘鹏,等. 组合热膜式流速矢量传感器 [J]. 光学精密工程, 2011, 19 (1):103-109. QUE R Y,ZHU R,LIU P,et al.. Combined hot-film anemometers for measuring flow speed vectors[J]. Opt. Precision Eng., 2011, 19(1): 103-109. (in Chinese)[3] 关荣锋. MEMS机油压力传感器可靠性研究 [J]. 微纳电子技术,2007,7(8):176-202 GUAN R F. Research on the reliability of MEMS oil pressure sensor [J]. Micronano Electronic Technology, 2007, 7(8):176-202.(in Chinese)[4] TSUNG L C, CHEN H C, CHUN T L, et al.. Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor [J]. Sensors and Actuators A: Physical, 2009, 152(1): 29-38.[5] LIN H, STEVENSON J T M, GUNDLACH A M, et al.. Direct Al-Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices[J]. Microelectronic Engineering, 2008, 85(5-6):1059-1061.[6] YOZO K, AKIO Y. Optimum design considerations for silicon piezoresistive pressure sensors [J]. Sensors and Actuators A: Physical, 1997, 62:539-542.[7] LIN L W, HUEY C C, YEN W L. A Simulation Program for the Sensitivity and Linearity of Piezoresistive Pressure Sensors [J]. Journal of Micro Electromechanical Systems, 1999, 8(4):514-522.[8] HERMANN S, KARL K. A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges [J]. IEEE Transactions on Electron Devices, 1993, 40(10):1754-1759.[9] 修显武.扩嫁基区晶体管负阻效应的研究. 山东:山东师范大学,2003. XIU X W. Investigation of negative resistance in ga-diffusion transistor Shandong: Shandong Normal University, 2003.(in Chinese)[10] ALVIN B, WOO T P, JOSEPH R M, et al.. Review: semiconductor piezoresistance for microsystems [J]. Proceedings of the IEEE, 2009, 97(3):513-552.

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