Quantum-squeezing effects of silicon cantilever nano-resonators

ZHANG Xia; YAN She-ping

doi:10.3788/OPE.20122004.0760

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Quantum-squeezing effects of silicon cantilever nano-resonators

Article | 更新时间：2020-08-12

- Quantum-squeezing effects of silicon cantilever nano-resonators
- Optics and Precision Engineering Vol. 20, Issue 4, Pages: 760-765(2012)
- 作者机构：
  
  1. 西安邮电学院电子工程学院,陕西西安,710100
  2. 上海汉得信息技术股份有限公司上海,201203
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20122004.0760
  CLC： TH824;TN752
- Received：12 November 2011，
  
  Revised：16 December 2011，
  
  Published Online：22 April 2012，
  
  Published：22 April 2012
- 稿件说明：
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张霞, 闫社平. 悬臂梁式硅纳米谐振器的量子压缩效应[J]. 光学精密工程, 2012,(4): 760-765

ZHANG Xia, YAN She-ping. Quantum-squeezing effects of silicon cantilever nano-resonators[J]. Editorial Office of Optics and Precision Engineering, 2012,(4): 760-765
张霞, 闫社平. 悬臂梁式硅纳米谐振器的量子压缩效应[J]. 光学精密工程, 2012,(4): 760-765 DOI： 10.3788/OPE.20122004.0760.

ZHANG Xia, YAN She-ping. Quantum-squeezing effects of silicon cantilever nano-resonators[J]. Editorial Office of Optics and Precision Engineering, 2012,(4): 760-765 DOI： 10.3788/OPE.20122004.0760.

摘要

分析了厚度分别为12 nm和38.5 nm的悬臂梁式硅纳米谐振器内由海森堡不确定原理所决定的零点位置不确定度

分析结果表明

零点位置不确定度与悬臂梁的厚度和宽度成反比、与悬臂梁的长度成正比

12 nm厚的悬臂梁其零点位置不确定度为4.110

-3

nm。结合参量泵量子压缩技术

分析了不同厚度的悬臂梁式硅纳米谐振器的量子压缩系数与器件结构尺寸、温度、泵激电压之间的关系

结果显示

量子压缩系数与温度成正比、与泵激电压成反比。当温度为0.01 K、泵激电压为4 V时

12 nm厚的悬臂梁式硅纳米谐振器的量子噪声降低了26.56 dB。该项研究有助于提高极薄悬臂梁式硅纳米谐振器在量子噪声影响下的极限检测精度。

Abstract

This paper analyzed the zero-point displacement uncertainty determined by Heisenberg uncertainty principle in the silicon cantilever nano-resonators with the thicknesses of 12 nm and 38.5 nm. The analysis results show that the zero-point displacement uncertainty is inversely proportional to the thickness and width of the cantilever and proportional to the length of the cantilever

and the zero-point displacement uncertainty of the silicon cantilever nano-resonator with the thickness of 12 nm is 4.1?10

-3

nm. Combining the parametric pumping quantum squeezing technique

the relationships between the quantum-squeezing factors of the silicon cantilever nano-resonators with different thicknesses and their structure dimensions

temperatures

pumping voltages were analyzed. The analysis results show that the quantum-squeezing factor is proportional to the temperature

and inversely proportional to the pumping voltage. When the temperature is 0.01 K and the pumping voltage equals 4 V

the quantum noise of the silicon cantilever nano-resonator with the thickness of 12 nm is reduced by 26.56 dB. The analysis results promote the improvement of the measurement accuracy of the ultra-thin cantilever nano-resonators under the influence of the quantum noises observably.

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references

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