Simulation and experiments of ion beam etching process for blazed holographic grating

WU Na; TAN Xin; Bayanheshig; TANG Yu-guo

doi:10.3788/OPE.20122009.1904

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Simulation and experiments of ion beam etching process for blazed holographic grating

Article | 更新时间：2020-08-12

- Simulation and experiments of ion beam etching process for blazed holographic grating
- Optics and Precision Engineering Vol. 20, Issue 9, Pages: 1904-1912(2012)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20122009.1904
  CLC： 0436.1;TN305.7
- Received：23 April 2012，
  
  Revised：15 August 2012，
  
  Published：10 September 2012
- 稿件说明：
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吴娜, 谭鑫, 巴音贺希格, 唐玉国. 闪耀全息光栅离子束刻蚀工艺模拟及实验验证[J]. 光学精密工程, 2012,20(9): 1904-1912

WU Na, TAN Xin, Bayanheshig, TANG Yu-guo. Simulation and experiments of ion beam etching process for blazed holographic grating[J]. Editorial Office of Optics and Precision Engineering, 2012,20(9): 1904-1912
吴娜, 谭鑫, 巴音贺希格, 唐玉国. 闪耀全息光栅离子束刻蚀工艺模拟及实验验证[J]. 光学精密工程, 2012,20(9): 1904-1912 DOI： 10.3788/OPE.20122009.1904.

WU Na, TAN Xin, Bayanheshig, TANG Yu-guo. Simulation and experiments of ion beam etching process for blazed holographic grating[J]. Editorial Office of Optics and Precision Engineering, 2012,20(9): 1904-1912 DOI： 10.3788/OPE.20122009.1904.

摘要

依据特征曲线法推导了非晶体表面的离子束刻蚀模拟方程

结合全息光栅的刻蚀特点开发出离子束刻蚀模拟程序

并通过实验数据分析并优化了非晶体材料刻蚀速率与离子束入射角的关系方程

最后利用离子束刻蚀实验对所开发的离子束刻蚀模拟程序进行了实验验证。调节掩模与基底材料的刻蚀速率比为2∶1至1∶2

制作了线密度为1 200 l/mm

闪耀角为~8.6

非闪耀角为34~98的4种闪耀光栅

与刻蚀模拟程序的结果进行对比

模拟误差<5%;控制离子束刻蚀时间为6~14 min

制作了线密度为1 200 l/mm

闪耀角为~8.6

顶角平台横向尺寸为0~211 nm的6种光栅

与刻蚀模拟程序的模拟结果进行对比

模拟误差<1%。比较实验及离子束刻蚀模拟结果表明

离子束刻蚀模拟程序获得的模拟刻蚀轮廓曲线与实际刻蚀轮廓曲线的误差<5%;模拟刻蚀截止点与实际刻蚀截止点误差<1%。实验表明

提出的模拟方程可以准确地描述不同工艺过程和工艺参数对最终刻蚀结果的影响

进而可预知和控制离子束刻蚀过程。

Abstract

A simulation equation of surface etching for amorphous materials during ion beam etching was worked out based on the characteristic curve method

and a simulation program named BLAZING for the ion etching process was established according to the holographic grating.Then

the relation between the etching rate of amorphous materials and ion beam incidence was analyzed and optimized. Finally

an experiment was carried out to verify the simulation program with the ion beam etching. By adjusting the etching rate ratio from 2∶1 to 1∶2 for a mask and substrate materials

four 1 200 l/mm blazed gratings with the right angle between 34and 98and the blazed angle about 8.6 were fabricated

and the simulation error between the experimental data and the simulation data is less than 5%. By controlling the etching time from 6 min to 14 min

six 1 200 l/mm blazed gratings with the ridge between 0 nm and 211 nm and the same blazed angle of 8.6 were fabricated

and the error mentioned above is less than 1%. The contrast results illustrate that the error of contour line between simulation and experimentation is less than 5%

and the error of etching ending time between simulation and experimentation is less than 1%. It concludes that the simulation program BLAZING can simulate the effect of different etching processes and different parameters on the etching results

and can predict and control the ion beam etching process.

关键词

Keywords

references

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Related Institution

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

University of Chinese Academy of Sciences

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University

Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University

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