Design and epitaxial growth of quantum-well for 852 nm laser diode

XU Hua-wei; NING Yong-qiang; ZENG Yu-gang; ZHANG Xing; QIN Li

doi:10.3788/OPE.20132103.0590

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Design and epitaxial growth of quantum-well for 852 nm laser diode

更新时间：2020-08-12

- Design and epitaxial growth of quantum-well for 852 nm laser diode
- Optics and Precision Engineering Vol. 21, Issue 3, Pages: 590-597(2013)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20132103.0590
  CLC： TN248.4
- Received：17 April 2012，
  
  Revised：10 May 2012，
  
  Published Online：20 March 2013，
  
  Published：15 March 2013
- 稿件说明：
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徐华伟宁永强曾玉刚张星秦莉. 852nm半导体激光器量子阱设计与外延生长[J]. 光学精密工程, 2013,21(3): 590-597

XU Hua-wei NING Yong-qiang ZENG Yu-gang ZHANG Xing QIN Li. Design and epitaxial growth of quantum-well for 852 nm laser diode[J]. Editorial Office of Optics and Precision Engineering, 2013,21(3): 590-597
徐华伟宁永强曾玉刚张星秦莉. 852nm半导体激光器量子阱设计与外延生长[J]. 光学精密工程, 2013,21(3): 590-597 DOI： 10.3788/OPE.20132103.0590.

XU Hua-wei NING Yong-qiang ZENG Yu-gang ZHANG Xing QIN Li. Design and epitaxial growth of quantum-well for 852 nm laser diode[J]. Editorial Office of Optics and Precision Engineering, 2013,21(3): 590-597 DOI： 10.3788/OPE.20132103.0590.

摘要

设计并外延生长了具有高温度稳定性的InAlGaAs/AlGaAs应变量子阱激光器，用于解决852 nm半导体激光器在高温环境下工作时的波长漂移问题。基于理论模型，计算并模拟对比了InAlGaAs

InGaAsP

InGaAs和GaAs量子阱的增益及其增益峰值波长随温度的漂移，结果显示

采用In

0.15

0.11

0.74

As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的波长温漂稳定性。使用金属有机化合物气相淀积(MOCVD)外延生长了In

0.15

0.11

0.74

As/Al

0.3

0.7

As有源区，通过反射各向异性谱(RAS)在线监测和PL谱研究了InAlGaAs/AlGaAs界面的外延质量，实验证明了通过降低生长温度和在InAlGaAs/AlGaAs界面处使用中断时间，可以有效抑制In析出，从而获得InAlGaAs/AlGaAs陡峭界面。最后，采用优化后的外延生长条件，研制出了InAlGaAs/AlGaAs应变量子阱激光器。实验测试结果显示

其光谱半高宽为1.1 nm，斜率效率为0.64 W/A，激射波长随温度漂移为0.256 nm/K。理论计算结果与实验测试结果相吻合，证明器件性能满足在高温环境下工作的要求。

Abstract

An InAlGaAs/AlGaAs strained quantumwell laser with high temperature stability was designed and grown to overcome the emission wavelength shift occurred in high temperature for a 852 nm laser diode. Based on a comprehensive model

the gains and wavelengths versus the operation temperatures of InAlGaAs

InGaAsP

InGaAs and GaAs quantumwells were calculated and compared. The results indicate that In

0.15

0.11

0.74

Asquantumwell is the most appropriate candidate for the quantum well of the 852 nm laser diode with the higher gain and better temperature stability simultaneously. Then

Metalorganic Chemical Vapor Deposition(MOCVD) was used to grow compressivestrained In

0.15

0.11

0.74

As/Al

0.3

0.7

Asactive region and Reflectance Anisotropy Spectroscopy (RAS) and Photoluminescence Measurements (PL) were applied to the evaluation of crystalline quality for InAlGaAs/AlGaAs interfaces. It is proved that the indium segregation effect can be effectively suppressed by lowering the growth temperature and using the interruption time between InAlGaAs quantumwell and AlGaAs barriers

and an abrupt interface and good crystalline quality for InAlGaAs/AlGaAs quantumwell can be obtained. Finally

an InAlGaAs/AlGaAs strained quantumwell laser was grown with optimized growth conditions. Experimental results indicate that the laser has a Full Width Half Maximum (FWHM) of 1.1 nm， the slope efficiency of 64 W/A and the wavelength shift with temperature of 0.256 nm/K. The theoretical calculation results are in good agreement with experimental results

which verifies that the laser meets the work requirements at a high temperature.

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references

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