Computer-controlled chemical mechanical polishing of silicon modification layer on aspheric silicon carbide surface

ZHANG Feng

doi:10.3788/OPE.20132112.3015

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Computer-controlled chemical mechanical polishing of silicon modification layer on aspheric silicon carbide surface

更新时间：2020-08-12

- Computer-controlled chemical mechanical polishing of silicon modification layer on aspheric silicon carbide surface
- Optics and Precision Engineering Vol. 21, Issue 12, Pages: 3015-3020(2013)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所光学系统先进制造技术中国科学院重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20132112.3015
  CLC： TN304.24;TN305.2
- Received：06 May 2013，
  
  Revised：13 June 2013，
  
  Published Online：25 December 2013，
  
  Published：25 December 2013
- 稿件说明：
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张峰. 非球面碳化硅表面硅改性层的数控化学机械抛光[J]. 光学精密工程, 2013,21(12): 3015-3020

ZHANG Feng. Computer-controlled chemical mechanical polishing of silicon modification layer on aspheric silicon carbide surface[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3015-3020
张峰. 非球面碳化硅表面硅改性层的数控化学机械抛光[J]. 光学精密工程, 2013,21(12): 3015-3020 DOI： 10.3788/OPE.20132112.3015.

ZHANG Feng. Computer-controlled chemical mechanical polishing of silicon modification layer on aspheric silicon carbide surface[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3015-3020 DOI： 10.3788/OPE.20132112.3015.

摘要

提出了一种数控化学机械抛光技术以实现非球面碳化硅表面硅改性层的高效精密抛光并获得高质量非球面碳化硅反射镜。研究了非球面碳化硅表面硅改性层的化学机械抛光机理，阐述了表面改性非球面碳化硅反射镜的数控化学机械抛光原理。通过与普通数控抛光对比，说明了数控化学机械抛光的优势。通过数控化学机械抛光实验，研究了这种抛光方法的材料去除函数。最后，以材料去除函数的研究结果为依据，采用数控化学机械抛光技术对口径为120 mm表面改性非球面碳化硅反射镜进行抛光。经过几个抛光周期的迭代，表面改性非球面碳化硅反射镜的面形精度由0.253（RMS值）（=0.632 8 m）收敛到0.014（RMS值），反射镜的表面粗糙度达到0.538 7 nm (RMS值)，满足光学设计技术指标的要求。

Abstract

A computercontrolled Chemical Mechanical Polishing(CMP) technology was presented to polish a silicon modification layer on the aspheric silicon carbide(SiC) surface in high precise and efficiency to achieve a high quality aspheric SiC mirror. The polishing theory of CMP for the silicon modification layer on aspheric SiC surface was studied. Then

the principle of computercontrolled CMP for manufacturing a surface modification aspheric SiC mirror was described. With comparing the computercontrolled CMP and ordinary computercontrolled polishing

the superiority of computercontrolled CMP was explained. Furthermore

on the basis of experiments

the material removal function of computercontrolled CMP was studied. Finally

a Ф120 mm surface modification aspheric silicon carbide mirror was polished by computercontrolled CMP technology according to the material removal function. The initial figure error of the mirror is 0.253(RMS)（=0.632 8 m）. After about ten polishing iterations

the final figure error and roughness of the mirror are 0.014 (RMS) and 0.538 7nm (RMS)

respectively

which can satisfy the desired optical performance．

关键词

Keywords

references

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