Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol&ndash;gel technique

LI Bao-rang; YANG Yang; YANG Zhi-wei; CHENG Wei-liang

doi:10.3788/OPE.20132112.3050

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Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol–gel technique

更新时间：2020-08-12

- Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol–gel technique
- Optics and Precision Engineering Vol. 21, Issue 12, Pages: 3050-3057(2013)
- 作者机构：
  
  华北电力大学能源动力与机械工程学院，北京102206
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20132112.3050
  CLC： O484.4+2
- Received：17 June 2013，
  
  Revised：16 September 2013，
  
  Published Online：25 December 2013，
  
  Published：25 December 2013
- 稿件说明：
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李宝让杨洋杨智伟程伟良. Lu2Ti2O7薄膜的溶胶凝胶合成及电学特性[J]. 光学精密工程, 2013,21(12): 3050-3057

LI Bao-Rang, YANG Xiang, YANG Zhi-Wei, CHENG Wei-Liang. Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol–gel technique[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3050-3057
李宝让杨洋杨智伟程伟良. Lu2Ti2O7薄膜的溶胶凝胶合成及电学特性[J]. 光学精密工程, 2013,21(12): 3050-3057 DOI： 10.3788/OPE.20132112.3050.

LI Bao-Rang, YANG Xiang, YANG Zhi-Wei, CHENG Wei-Liang. Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol–gel technique[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3050-3057 DOI： 10.3788/OPE.20132112.3050.

摘要

研究了Lu2Ti2O7薄膜的结构、制备和性能。以Si作为基体，采用溶胶凝胶法研究了各种因素：煅烧温度、保温时间、转速和涂层的数量等对薄膜质量包括表面均方根粗糙度等的影响，并在此基础上研究了薄膜的电学性能。研究表明：在650~1 050 ℃能够形成Lu2Ti2O7相，在750 ℃时能够获得Lu2TiO5含量较少的理想薄膜。研究同时表明：温度对表面均方根粗糙度影响相对较大。Lu2Ti2O7薄膜电学性能研究表明：保温时间有利于Lu2Ti2O7的低温相变和Lu2TiO5相的形成，但是对薄膜电学性能的影响相对较小。采用硝酸镥和二氧化钛作为前驱体，通过溶胶凝胶法可以制备致密的Lu2Ti2O7薄膜，该薄膜制备过程中有中间相Lu2TiO5产生，但该相可通过改变前驱体比例、延长保温时间或者提高煅烧温度来消除。

Abstract

The structures

fabrication and properties of Lu2Ti2O7 thin films were explored. Depending upon solgel fabrication technique

the influence of the spinning parameters

such as annealing temperature

holding time

rotating speed and the number of coating layers on the microstructure including surface roughness was investigated systematically. Then the electrical properties of the Lu2Ti2O7 films deposited on Si substrates were researched to optimize the parameters for the growth of Lu2Ti2O7 films. The investigation reveals that the annealing temperature no less than 750 ℃ is necessary to obtain an optimal thin film containing less amount of Lu2TiO5

which is formed at temperature arranging from 650 ℃ to 1 050 ℃. Meanwhile

the studies also indicate that the calcination temperature shows a great influence on the surface roughness. Further analysis on electric properties suggests that the holding time is benefit to both the low temperature phase transition of Lu2Ti2O7 and the formation of Lu2TiO5 phase

but it has little effect on the electrical properties of the film. With Lu(NO3)3 and TiO2 as precursors

high densified Lu2Ti2O7 film containing less amounts of Lu2TiO5 phase can be prepared successfully via solgel route

and the less amounts of Lu2TiO5 phase can be eliminated by increasing the calcination temperature

prolonging the holding time or adjusting the ratio of Lu(NO3)3 to TiO.

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references

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Synthesis conditions and electric properties of Lu2Ti2O7 thin films prepared by the sol–gel technique

DOI：10.3788/OPE.20132112.3050

摘要

Abstract

关键词

Keywords

references