Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon

SHANG Zheng-guo; LI Dong-ling; WEN Zhi-yu; ZHAO Xing-qiang

doi:10.3788/OPE.20132112.3058

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Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon

更新时间：2020-08-12

- Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon
- Optics and Precision Engineering Vol. 21, Issue 12, Pages: 3058-3065(2013)
- 作者机构：
  
  重庆大学光电工程学院，重庆 400044
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20132112.3058
  CLC： TK83;O484.1
- Received：18 June 2013，
  
  Revised：14 August 2013，
  
  Published Online：25 December 2013，
  
  Published：25 December 2013
- 稿件说明：
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尚正国, 李东玲, 温志渝, 赵兴强. 硅基氮化铝薄膜风致振动MEMS能量采集单元[J]. 光学精密工程, 2013,21(12): 3058-3065

CHANG Zheng-Guo, LI Dong-Ling, WEN Zhi-Yu, DIAO Xin-Jiang. Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3058-3065
尚正国, 李东玲, 温志渝, 赵兴强. 硅基氮化铝薄膜风致振动MEMS能量采集单元[J]. 光学精密工程, 2013,21(12): 3058-3065 DOI： 10.3788/OPE.20132112.3058.

CHANG Zheng-Guo, LI Dong-Ling, WEN Zhi-Yu, DIAO Xin-Jiang. Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon[J]. Editorial Office of Optics and Precision Engineering, 2013,21(12): 3058-3065 DOI： 10.3788/OPE.20132112.3058.

摘要

研究了基于氮化铝（AlN）薄膜的压电式风致振动微机电系统（MEMS）能量采集单元的制备工艺。采用脉冲直流磁控溅射的方法制备了具有（002）择优取向的AlN压电薄膜

并通过X射线衍射仪(XRD)及扫描电镜(SEM)表征了AlN薄膜的性能。测试结果表明：种子层材料、气体流量比和衬底温度等对AlN薄膜晶体取向及薄膜性能有重要影响。制备的具有（002）择优取向的AlN薄膜的衍射强度达到105count

半高宽为2.7。对硅基AlN风致振动MEMS能量采集单元加工工艺流程进行优化，制备出了风致振动能量采集系统原理样机。风洞实验表明，在15.9 m/s的风载荷作用下，MEMS能量采集单元的最大输出功率为1.6 W。该工艺亦可用于其他硅基AlN薄膜MEMS器件的制备。

Abstract

A flow-inducedvibration Micro-electronicmechanic System(MEMS) energy harvesting unit based on an Aluminum nitride( AlN) film on the silicon was presented. The AlN film with crystal orientation(002) was prepared by DC pulse magnetron sputtering and its performance was characterized by the X-ray Diffraction(XRD) and the Scanning Electron Microscopy(SEM). The results show that the crystal orientation and performance of the AlN film are depended on the seed layer materials

gas flow ratio and the substrate temperature

its crystal orientation is (002)

and its intensity and Full Width at Half Maximum(FWHM) are 105 counts and 2.7

respectively. The prototype of the flowinducedvibration MEMS energy harvesting unit was presented after optimizing process flow. The wind tunnel experiments show that the maximum power output of the flowinducedvibration MEMS energy harvesting unit is about 1.6 W when the wind speed is 15.9 m/s. The optimization process also can be used to fabricate other MEMS devices based on the AlN film.

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references

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