An ultra-high pressure sensor based on autofrettage technology and piezoresistive effect is developed to remove the residual stress in packaging and to ensure a high sensitive output in pressure measurement with a large range. The elastic element is made of high strength spring steel with cylinder structure
and the sensitive element is silicon flat chip with an inverted cup structure. When the pressure is applied to the metal elastic element
the axial deformation of the metal elastic element is occurred and passed to the chip via a pass rod
then the chip's resistive signal is proportional to the axial deformation based on the piezoresistive effect. The pressure measurement is accomplished by measuring the resistive signal. In the study of working ability of the elastic element
the load bearing strength of the elastic element is researched by combining the theory and simulation
and the autofrettage technology is used to improve the loading ability of the elastic element. Finally
the static performance experiments in 250 MPa and 1 000 MPa ranges are carried out for a packaged sensor respectively. The experiments show that the comprehensive accuracy of the sensor is 2.3%
the linearity is 0.7% in 250 MPa and 0.52% in 1 000 MPa . The simulative and experimental results both indicate that the metal elastic element with autofrettaged cylinder structure is able to endure ultra-high pressure beyond 1 000 MPa
and the developed sensor can meet the measuring demand of the contemporary industry.
关键词
Keywords
references
[1]KURTZ A D, NED A A, GOODMAN S, et al.. Latest ruggedized high temperature piezoresistive transducers [C]. NASA 2003 Propulsion Measurement Sensor Development Workshop, Huntsville, AL,2003:13-15.[2]ZHAO Y L, ZHAO L B, JIANG Z D. High temperature and frequency pressure sensor based on silicon-on-insulator layers [J]. Measurement Science and Technology, 2006, 17(3): 519-523.[3]张世荣,文彬,崔光浩. 双膜片的硅-蓝宝石高温压力传感器[J].黑龙江大学自然科学学报, 2001,18(4): 56-58,62.ZHANG SH R, WEN B, CUI G H. A kind of SOS high temperature pressure transducer with double membrane [J]. Journal of Natural Science of Heilongjiang University, 2001,18(4):56-58,62. (in Chinese)[4]晏建武,周继承,鲁世强,等.合金薄膜电阻应变式压力传感器的研究进展[J].材料导报,2005,19(12): 31-34. YAN J W, ZHOU J C, LU S Q, et al.. Development and investigation trends of alloy thin film piezoresistive sensor [J]. Material Review, 2005,19(12): 31-34. (in Chinese)[5]乐孜纯. 微弯光纤压力传感器应变膜片研究[J].光学 精密工程, 1994,2(3):41-47.LE Z C. Design of strain diaphragm using in the microbend fiber-optic pressure sensor[J]. Opt. Precision Eng., 1994,2(3):41-47.(in Chinese)[6]伞海生, 宋子军, 王翔, 等. 适用于恶劣环境的MEMS压阻式压力传感器[J].光学 精密工程, 2012,20(3): 550-555.SAN H SH, SONG Z J, WANG X, et al.. Piezoresistive pressure sensor for harsh environments[J]. Opt. Precision Eng., 2012,20(3): 550-555.(in Chinese)[7]邵国华. 超高压容器[M]. 北京: 化学工业出版社, 2002.SHAO G H. Ultrahigh Pressure Vessels [M]. Beijing:Chemical Industry Press, 2002. (in Chinese)[8]袁希光. 传感器技术手册[M]. 北京: 国防工业出版社, 1992.YUAN X G. Sensor Technology Handbook [M]. Beijing:National Defence Industrial Press,1992. (in Chinese)[9]王伟忠,赵玉龙,林启敬. MEMS三维微力探针传感器设计及性能测试[J]. 纳米技术与精密工程, 2011, 9(3): 199-202.WANG W Z, ZHAO Y L, LIN Q J. Design and performance test of MEMS tri-axial micro-force probe sensor [J]. Nanotechnology and Precision Engineering, 2011, 9(3): 199-202. (in Chinese)[10]陈涛,孙立宁,陈立国,等. 侧壁压阻式力传感器的研制与标定[J]. 纳米技术与精密工程,2010,8(3):201-205.CHEN T, SUN L N, CHEN L G, et al.. Design and calibration of sidewall piezoresistive force sensor [J]. Nanotechnology and Precision Engineering,2010,8(3):201-205. (in Chinese)[11]干勇. 钢铁材料手册[M].北京:化学工业出版社,2009.GAN Y. Steel Manual [M]. Beijing:Chemical Industry Press, 2009. (in Chinese)[12]傅卫国. 自增强容器最大弹性许可载荷的最宜超应变度[J]. 化工装备技术,1995, 16(1): 33-35.FU W G. Optimized overstrain degree of autofrettaged during maximum elastic strength [J]. Chemical Equipment Technology, 1995, 16(1): 33-35. (in Chinese)[13]王新敏.ANSYS工程结构数值分析[M].北京:人民交通出版社,2007.WANG X M. ANSYS Numerical Analysis of Engineering Structure [M]. Beijing:China Communications Press, 2007. (in Chinese)