Properties of germanium films and their applications to photon counting imaging detectors

LI Yun-peng; ZHENG Xin; ZHANG Hong-ji; WANG Xiao-dong; CHEN Bo; CAO Jian-lin

doi:10.3788/OPE.20142205.1143

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Properties of germanium films and their applications to photon counting imaging detectors

更新时间：2020-08-13

- Properties of germanium films and their applications to photon counting imaging detectors
- Optics and Precision Engineering Vol. 22, Issue 5, Pages: 1143-1149(2014)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
  2. 中国科学院大学北京,中国,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20142205.1143
  CLC： TP212.14;O484.4
- Received：06 February 2013，
  
  Revised：12 March 2013，
  
  Published：25 May 2014
- 稿件说明：
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李云鹏, 郑鑫, 张宏吉等. Ge薄膜性能及其在光子计数成像探测器中的应用[J]. 光学精密工程, 2014,22(5): 1143-1149

LI Yun-peng, ZHENG Xin, ZHANG Hong-ji etc. Properties of germanium films and their applications to photon counting imaging detectors[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1143-1149
李云鹏, 郑鑫, 张宏吉等. Ge薄膜性能及其在光子计数成像探测器中的应用[J]. 光学精密工程, 2014,22(5): 1143-1149 DOI： 10.3788/OPE.20142205.1143.

LI Yun-peng, ZHENG Xin, ZHANG Hong-ji etc. Properties of germanium films and their applications to photon counting imaging detectors[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1143-1149 DOI： 10.3788/OPE.20142205.1143.

摘要

为改善光子计数成像探测器电荷感应层的性能，提高光子计数成像系统的成像质量，分别用直流磁控溅射法（DC）与射频磁控溅射法（RF）制备了不同厚度的Ge薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、表面轮廓仪、四探针表面电阻测试仪对两种方法所制备的薄膜进行了结构特征与电学性能的表征。结果表明：两种方法所制备的薄膜均为非晶态结构，DC制备的Ge薄膜比RF制备的Ge薄膜稀疏，其不同膜厚下的电阻率均大于RF所制备的薄膜。实验显示，薄膜越厚其电学性能受氧化影响越小，电学性能越稳定。实验对比了不同方阻下Ge薄膜应用于探测器的成像性能，结果表明：方阻在百兆级范围内时成像效果较好，且方阻变化时成像效果变化不大，但方阻大到2GΩ/□时会导致系统分辨率下降。

Abstract

To improve the performance of the charge induce layer in a photon counting imaging detector and to enhance the imaging quality of the photon counting imaging system

different thickness Ge films were deposited by Radio Frequency(RF) magnetron sputtering and Direct Current(DC) magnetron sputtering

respectively. The X-ray Diffraction(XRD)

Scanning Electron Microscopy(SEM)

surface profiler

and the four-point probe surface resistance tester were used to analyze and characterize properties of the films deposited by two methods mentioned above. Research shows that both the Ge films are amorphous structures

and the Ge film prepared by DC is sparser than that prepared by RF

and the resistivities of Ge films with different thicknesses prepared by DC are greater than that of the films deposited by RF. The experiment indicates that the thicker the film

the more stable the electrical properties. Imaging performance of the detector with the Ge film on different sheet resistances is compared experimentally

and it shows that the imaging performance is not only excellent

but also stable within hundreds of MΩ/□

but when the sheet resistance is higher than 2 GΩ/□

the resolution of the system will be reduced.

关键词

Keywords

references

尼启良, 何玲平, 刘世界. 使用感应电荷位敏阳极的极紫外单光子成像系统[J]. 光学精密工程, 2010, 18(12):2543-2548. NI Q L, HE L P, LIU SH J, et al..Extreme ultraviolet single photon-counting imaging system based on induced charge position-sensitive anode [J].Opt.Precision Eng.,2010, 18(12):2543-2548.(in Chinese)

尼启良, 韩素立, 陈斌, 等. 球面微通道板在极紫外波段的量子探测效率[J]. 光学精密工程, 2011, 19(11):2602-2607. NI Q L, HAN S L, CHEN B, et al..Quantum detection efficiency of spherical microchannel plate in extreme ultraviolet[J].Opt.Precision Eng., 2011, 19(11):2601-2607.(in Chinese)

卜绍芳, 尼启良, 何玲平, 等. 极紫外波段微通道板光子计数探测器[J]. 中国光学, 2012, 5(3):302-309. BU SH F, NI Q L, HE L P, et al..Microchannel plate photon counting detector in UV range[J].Chinese Optics, 2012, 5(3):302-309.(in Chinese)

刘永安, 鄢秋荣, 盛立志, 等. 电荷云尺寸对紫外光子计数成像探测器性能的影响[J]. 物理学报, 2011, 60(4):048501. LIU Y A, YAN Q R, SHENG L ZH, et al..Influence of charge cloud size on performance of UV photon-counting imaging detector[J].Acta Phys.Sin. , 2011, 60(4):048501.(in Chinese)

李敏, 范鲜红, 尼启良, 等. 微通道板在12~40 nm波段量子效率的实验研究[J]. 光学精密工程, 2008, 16(1):1-5. LI M, FAN X H, NI Q L, et al..Quantum efficiency of microchannel plate in 12-40 nm[J].Opt.Precision Eng., 2008, 16(1):1-5.(in Chinese)

尼启良, 卜绍芳, 刘世界, 等. 微通道板光子计数成像探测器预处理实验研究[J]. 光子学报, 2012, 41(6):658-663. NI Q L, BU SH F, LIU SH J,et al..Preconditioning experiment research of microchannel plate photon counting imaging detector[J].Acta Photonica Sinica, 2012, 41(6):658-663.(in Chinese)

JAGUTZKI O, LAPINGTON J S, WORTH L B C, et al..Position sensitive anodes for MCP read-out using induced charge measurement[J].Nuclear Instruments and Methods in Physics Research, 2002, 477:256-261.

赵菲菲, 赵宝升, 张兴华, 等. Ge薄膜特性及其在光子计数成像系统中的应用[J]. 光学学报, 2009, 29(11):3236-3240. ZHAO F F, ZHAO B SH,ZHANG X H, et al..Properties of gemanium thin film and its application in photon counting imaging system[J].Acta Optica Sinica, 2009, 29(11):3236-3240.(in Chinese)

SANDE J C G, AFONSO C N, ESCUDERO J L, et al..Optical properties of laser-deposited a-Ge films:a comparison with sputtered and e-beam-deposited films[J].Optical Society of America, 1992, 31(28):6133-6138.

唐兆麟, 黄荣芳, 闻立时. 超薄铝膜电导特性的原位测量研究[J]. 材料研究学报, 1996, 32(3):308-312. TANG ZH L, HUANG R F, WEN L SH.Machanism of size effect of electric conductivity in ultrathin metal film[J].Chinese Journal of Materials Research, 1996, 32(3):308-312.(in Chinese)

SINHA M K, MUKHERJEE S K, PATHAK B, et al..Effect of deposition process parameters on resistivity of metal and alloy films deposited using anodic vacuum arc technique [J]. Thin Solid Films, 2006, 515:1753-1757.

VICTOR E, HENRICH, JOHN C C.Auger spectroscopy studies of the oxidation of amorphous and crystalline germanium[J].Journal of Applied Physics,1975, 46(3):1206-1213.

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