Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor

CHEN De-yong; CAO Ming-wei; WANG Jun-bo; JIAO Hai-long; ZHANG Jian

doi:10.3788/OPE.20142205.1235

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Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor

更新时间：2020-08-13

- Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor
- Optics and Precision Engineering Vol. 22, Issue 5, Pages: 1235-1242(2014)
- 作者机构：
  
  中国科学院电子学研究所传感技术国家重点实验室北京,100190
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20142205.1235
  CLC： TP212.1
- Received：05 December 2013，
  
  Revised：28 January 2014，
  
  Published：25 May 2014
- 稿件说明：
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陈德勇, 曹明威, 王军波等. 谐振式MEMS压力传感器的制作及圆片级真空封装[J]. 光学精密工程, 2014,22(5): 1235-1242

CHEN De-yong, CAO Ming-wei, WANG Jun-bo etc. Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1235-1242
陈德勇, 曹明威, 王军波等. 谐振式MEMS压力传感器的制作及圆片级真空封装[J]. 光学精密工程, 2014,22(5): 1235-1242 DOI： 10.3788/OPE.20142205.1235.

CHEN De-yong, CAO Ming-wei, WANG Jun-bo etc. Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1235-1242 DOI： 10.3788/OPE.20142205.1235.

摘要

为了提高传感器的品质因数，有效保护谐振器，提出了一种基于绝缘体上硅（SOI）-玻璃阳极键合工艺的谐振式微电子机械系统（MEMS）压力传感器的制作及真空封装方法。该方法采用反应离子深刻蚀技术（DRIE），分别在SOI晶圆的低电阻率器件层和基底层上制作H型谐振梁与压力敏感膜；然后，通过氢氟酸缓冲液腐蚀SOI晶圆的二氧化硅层释放可动结构。最后，利用精密机械加工技术在Pyrex玻璃圆片上制作空腔和电连接通孔，通过硅-玻璃阳极键合实现谐振梁的圆片级真空封装和电连接，成功地将谐振器封装在真空参考腔中。对传感器的性能测试表明：该真空封装方案简单有效，封装气密性良好；传感器在10kPa~110kPa的差分检测灵敏度约为10.66Hz/hPa，线性相关系数为0.99999542。

Abstract

To improve the quality factor of sensors and to protect resonators

the fabrication and wafer-level vacuum packaging methods for a Micro-electro-mechanic System(MEMS) resonant pressure sensor was proposed based on Silicon On Insulator (SOI)-glass anodic bonding technology. Through Deep Reactive Ion Etching (DRIE) process and buffered oxide etched releasing process

H-type resonant beams and pressure diaphragm of the sensor were fabricated on the low resistivity device layer and the substrate layer of SOI wafer

respectively

and a moveable mechanism was release by a SiO

layer of the SOI wafer corroded by hydrofluoric acid flow. Finally

electrical connection and a cavity for the vibration of beams was implemented on the Pyrex glass piece by fine mechanical machining and the wafer-level vacuum packaging and electric connection of the resonators were achieved with SOI-glass anodic bonding. Experimental results demonstrate that the packaging scheme is effective and easy to achieve with an excellent hermetic sealing

and the sensor has a differential sensitivity of 10.66 Hz/hPa and linear correlation coefficient of 0.999 995 in the range of 10 kPa to 110 kPa.

关键词

Keywords

references

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