Photoelectric response of ICMOS on total dose irradiation

YAN Jin-yun; JIANG Jie; ZHANG Guang-jun

doi:10.3788/OPE.20142212.3153

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Photoelectric response of ICMOS on total dose irradiation

更新时间：2020-08-13

- Photoelectric response of ICMOS on total dose irradiation
- Optics and Precision Engineering Vol. 22, Issue 12, Pages: 3153-3159(2014)
- 作者机构：
  
  北京航空航天大学仪器科学与光电工程学院精密光机电一体化技术教育部重点实验室北京,100191
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20142212.3153
  CLC： TN144;TN386.5
- Received：24 January 2014，
  
  Revised：20 March 2014，
  
  Published：25 December 2014
- 稿件说明：
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闫劲云, 江洁, 张广军. 像增强型图像传感器在总剂量辐照下的光响应度[J]. 光学精密工程, 2014,22(12): 3153-3159

YAN Jin-yun, JIANG Jie, ZHANG Guang-jun. Photoelectric response of ICMOS on total dose irradiation[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3153-3159
闫劲云, 江洁, 张广军. 像增强型图像传感器在总剂量辐照下的光响应度[J]. 光学精密工程, 2014,22(12): 3153-3159 DOI： 10.3788/OPE.20142212.3153.

YAN Jin-yun, JIANG Jie, ZHANG Guang-jun. Photoelectric response of ICMOS on total dose irradiation[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3153-3159 DOI： 10.3788/OPE.20142212.3153.

摘要

采用

Co-

射线对像增强型图像传感器进行了总剂量辐照实验

以便评估该器件在空间总剂量辐照下的微光探测性能.当总剂量达到预定剂量点时

采用离线测试的方法定量测试了器件的光响应度变化情况.实验结果表明

随着辐照总剂量的增加

器件的光响应度迅速下降;当总剂量达60 krad(Si)时

相对光响应度降低至辐照前的6%.根据像增强型图像传感器的构成

分析了光响应度下降的原因

并推导了光响应度随辐照剂量变化的经验公式.实验显示

提高像增强型图像传感器的增益电压可补偿光响应度的衰减

总剂量达25 krad(Si)时

增益提高0.23 V其光响应度即可恢复至未接受辐照前的100%

并保持良好的微光探测能力.研究表明

像增强型图像传感器可承受25 krad(Si)的总剂量辐射.

Abstract

An irradiation experiment for an image-intensified sensor (Intensified Complemetary Metal-oxide Semiconductor

ICMOS) was performed with a

Co-

ray source to evaluate its weak-light-detecting ability under the total dose irradiation. When the total dose of irradiation reached the predetermined point

the change of photoelectric response capability of the sensor was measured quantitatively by an off line method. The experiment results show that as the total dose of irradiation increases

the photoelectric response capability decreases rapidly. When the total dose of irradiation reaches 60 krad(Si)

the photoelectric response capability is reduced to 6%. The causes of decline of the photoelectric response capability were analyzed according to the components of the image-intensified sensor and empirical equations of the decline of the photoelectric response capability were also derived. The experiments demonstrate that the decline of the photoelectric response capability is compensated by improving the voltage gain of the image-intensified sensor. When the total dose of irradiation reaches 25 krad(Si)

the photoelectric response capability still maintains 100% by improving the voltage gain of the image-intensified sensor of 0.23 V meanwhile maintaining a good weak-light-detecting ability. These findings show that the image-intensified sensor is able to withstand 25 krad(Si) of the total dose irradiation.

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