Effect of triethanolamine in lapping spinel using fixed abrasive pad

WANG Zhan-kui; ZHU Yong-wei; ZHU Lin; WANG Jian-bin

doi:10.3788/OPE.20152304.1034

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Effect of triethanolamine in lapping spinel using fixed abrasive pad

更新时间：2020-08-13

- Effect of triethanolamine in lapping spinel using fixed abrasive pad
- Optics and Precision Engineering Vol. 23, Issue 4, Pages: 1034-1043(2015)
- 作者机构：
  
  1. 南京航空航天大学机电学院,江苏南京,210016
  2. 河南科技学院机电学院,河南新乡,中国,453003
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20152304.1034
  CLC： O786;TN305.2
- Received：07 June 2014，
  
  Revised：20 July 2014，
  
  Published：25 April 2015
- 稿件说明：
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王占奎, 朱永伟, 朱琳等. 三乙醇胺在镁铝尖晶石固结磨料研磨中的作用[J]. 光学精密工程, 2015,23(4): 1034-1043

WANG Zhan-kui, ZHU Yong-wei, ZHU Lin etc. Effect of triethanolamine in lapping spinel using fixed abrasive pad[J]. Editorial Office of Optics and Precision Engineering, 2015,23(4): 1034-1043
王占奎, 朱永伟, 朱琳等. 三乙醇胺在镁铝尖晶石固结磨料研磨中的作用[J]. 光学精密工程, 2015,23(4): 1034-1043 DOI： 10.3788/OPE.20152304.1034.

WANG Zhan-kui, ZHU Yong-wei, ZHU Lin etc. Effect of triethanolamine in lapping spinel using fixed abrasive pad[J]. Editorial Office of Optics and Precision Engineering, 2015,23(4): 1034-1043 DOI： 10.3788/OPE.20152304.1034.

摘要

探索了三乙醇胺在镁铝尖晶石固结磨料研磨中的作用机理并进行了系列实验。首先

通过显微压痕实验测量了三乙醇胺和去离子水作用下镁铝尖晶石样品的硬度。然后

采用X射线光电子能谱仪(XPS)分析了三乙醇胺的化学作用机理

研究了在三乙醇胺和去离子水作用下工件表面层化学组分随深度的变化

估算了其表面软化层的厚度。最后

通过研磨实验探索了去离子水和不同浓度的三乙醇胺对材料去除率和表面质量的影响。结果表明:三乙醇胺研磨液对工件的化学作用降低了其表面层的显微硬度

形成了软化层;三乙醇胺和去离子水形成软化层的机制是其中的OH

和吸附的CO

与尖晶石基体发生了反应

而三乙醇胺形成的软化层厚度约为2 nm

去离子水形成的软化层厚度小于0.65 nm;采用三乙醇胺研磨液的材料去除率高于采用去离子水

但表面质量较采用去离子水的差。实验证明

三乙醇胺对工件的化学作用可以显著地提高材料去除效率。

Abstract

The action mechanism of triethanolamine in lapping spinel wafers using a fixed abrasive pad was investigated

and a serial of experiments were carried out. Firstly

micro indentation experiments were conducted to measure the hardnesses of spinel wafers soaked in triethanolamine solution and de-ionized water. Then an X-ray photoelectron spectrometer (XPS) was employed to analyze the chemical mechanism of triethanolamine and to research the changes of chemical composition on wafers' surface layer with etching depth increasing. Furthermore

the softened layer thicknesses affected by triethanolamine solution and de-ionized water were estimated. Finally

the influences of triethanolamine solution and de-ionized water on the material removal rate and surface quality were discussed by a lapping experiment using the fixed abrasive pad. Experimental results indicate that the micro hardness of surface layer becomes lower and the softened layer is formed owing to chemical effect of triethanolamine solution on spinel wafers. The softened layer formation in triethanolamine solution and de-ionized water is attributed to the chemical reactions of CO

and OH

and the softened layer thickness in triethanolamine solution is 2 nm

but that in de-ionized water is less than 0.65 nm. However

the material removal rate in the lapping with triethanolamine solution is higher than that with de-ionized water

but the surface quality in the condition as mentioned above is worse than that with de-ionized water. It concludes that the chemical influence of triethanolamine solution could greatly enhance the material removal rates.

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