Ultrasonic assisted grinding for silicon carbide

LIU Li-fei; ZHANG Fei-hu; LIU Min-hui

doi:10.3788/OPE.20152308.2229

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Ultrasonic assisted grinding for silicon carbide

更新时间：2020-08-12

- Ultrasonic assisted grinding for silicon carbide
- Optics and Precision Engineering Vol. 23, Issue 8, Pages: 2229-2235(2015)
- 作者机构：
  
  哈尔滨工业大学机电工程学院,黑龙江哈尔滨,150001
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20152308.2229
  CLC： TN304.24;TN305.2
- Received：20 December 2014，
  
  Revised：15 January 2015，
  
  Published：25 August 2015
- 稿件说明：
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刘立飞, 张飞虎, 刘民慧. 碳化硅陶瓷的超声振动辅助磨削[J]. 光学精密工程, 2015,23(8): 2229-2235

LIU Li-fei, ZHANG Fei-hu, LIU Min-hui. Ultrasonic assisted grinding for silicon carbide[J]. Editorial Office of Optics and Precision Engineering, 2015,23(8): 2229-2235
刘立飞, 张飞虎, 刘民慧. 碳化硅陶瓷的超声振动辅助磨削[J]. 光学精密工程, 2015,23(8): 2229-2235 DOI： 10.3788/OPE.20152308.2229.

LIU Li-fei, ZHANG Fei-hu, LIU Min-hui. Ultrasonic assisted grinding for silicon carbide[J]. Editorial Office of Optics and Precision Engineering, 2015,23(8): 2229-2235 DOI： 10.3788/OPE.20152308.2229.

摘要

采用普通磨削方式和超声振动辅助磨削方式对无压烧结SiC材料进行了磨削工艺实验

对不同磨削方式下磨削参数对磨削力比、表面损伤及亚表面损伤的影响进行了对比研究

并分析了超声振动磨削作用机制。实验结果显示

该实验中SiC材料去除主要以脆性去除为主

砂轮磨削力比随着磨削深度和进给速度的增加缓慢增加

随着主轴转速的增加略有减小;普通磨削时SiC工件亚表面损伤深度随着磨削深度、进给速度增加逐渐增加

而超声振动辅助磨削变化较小。与普通磨削相比

在相同的磨削参数下

超声振动辅助磨削的高频冲击使材料破碎断裂情况得到改善

且磨削力比减小近1/3

表面裂纹、SiC晶粒脱落、剥落等表面损伤较少

表面损伤层较浅

亚表面裂纹数量及深度都有较大程度降低

可以获得较为理想的表面质量。

Abstract

A grinding experiment was performed for silicon carbide (SiC) materials by Ultrasonic Assisted Grinding (UAG) and Normal Grinding (CG) methods. The effects of grinding parameters in different modes on the grinding force ratio

surface damage and sub-surface damage of the SiC materials were researched by using a dynamometer and a Scanning Electron Microscopy(SEM). Then the action mechanism of the UAG was researched. The experimental results show that brittle fracture is the main removal mode in grinding process. The grinding force ratio of the grinding wheel increases with the increases of cutting depth and feed rates slowly and decreases with the increase of pindle speed slightly. In the normal grinding

the sub-surface damage depth of a SiC workpiece increases with the increase of cutting depth and feed rates gradually

and that in the UAG has a smaller change. Under the same grinding parameters

the grinding force ratio in UAG process is reduced nearly 1/3 as compared with the results in CG process

and its surface damages

such as surface cracks

fall off of SiC grains

flaking of SiC are reduced and the thickness of surface damage layer is thinned. In addition

the density and depths of sub-surface cracks are reduced in a greater degree. It concludes that the UAG method can obtain ideal surface quality and high processing efficiency.

关键词

Keywords

references

郝寅雷,赵文兴,翁志成. 新型反射镜材料——碳化硅[J]. 宇航材料工艺, 2001(4):11-14. HAO Y L, ZHAO W X, WENG ZH CH. New mirror material of silicon carbide[J]. Aerospace Materials & Technology, 2001(4):11-14. (in Chinese)

NI J M, LI B Z. Phase transformation in high-speed cylindrical grinding of SiC and its effects on residual stresses [J]. Materials Letters, 2012,89:150-152.

张剑寒,张宇民,韩杰才. 空间用碳化硅反射镜的设计制造与测试[J]. 光学精密工程,2006,14(2):179-184. ZHANG J H,ZHANG Y M,HAN J C,et al.. Design,fabrication and testing of space-borne SiC mirror [J]. Opt. Precision Eng.,2006,14(2):179-184. (in Chinese)

姚旺,张宇民,韩杰才,等. 反应烧结碳化硅的磨削特性[J]. 无机材料学报,2012,27(7):764-768. YAO W, ZHANG Y M, HAN J C, et al.. Grinding characteristics of reaction bonded silicon carbide [J]. Journal of Inorganic Materials,2012,27(7):764-768. (in Chinese)

池宪,吴凡,锁小红. C-SiC陶瓷基复合材料磨削参数优化研究[J]. 航空精密制造技术,2012,48(1):41-43. CHI X, WU F, SUO X H. Research of grinding parameters about C-SiC ceramic matrix composite[J]. Aviation Precision Manufacturing Technology,2012,48(1):41-43. (in Chinese)

AGARWAL S, RAO P V. Experimental investigation of surface/subsurface damage formation and material removal mechanisms in SiC grinding[J]. International Journal of Machine Tools & Manufacture, 2008,48:698-710.

刘运凤,荆君涛,李占杰. 旋转超声磨削加工中刀具结合剂类型与加工性能的关系[J]. 光学精密工程,2012,20(9):2021-2028. LIU Y F,JING J T,LI ZH J. Relationship between bond patterns of tools and working performance in rotary ultrasonic grinding[J]. Opt. Precision Eng.,2012,20(9):2021-2028. (in Chinese)

荆君涛,刘运凤,李占杰,等. 旋转超生磨削加工中影响磨具寿命的结构参数优化[J]. 光学精密工程,2013,21(4):972-979. JING J T,LIU Y F,LI ZH J,et al.. Optimization of structure parameters affecting tool life in rotary ultrasonic grinding machining[J]. Opt. Precision Eng.,2013,21(4):972-979. (in Chinese)

JI R J, LIU Y H, ZHANG Y Z, et al.. Optimizing machining parameters of silicon carbide ceramics with ED milling and mechanical grinding combined process [J]. Int. J. Adv. Manuf. Technol., 2010,51:195-204.

GAO G F, ZHAO B, XIANG D H, et al.. Research on the surface characteristics in ultrasonic grinding nano-zirconia ceramics[J]. Journal of Materials Processing Technology, 2009,209:32-37.

YANG X B, HAN J C. Experimental study on ultrasonic vibration grinding of brittle optical materials [J]. Optical Technology, 2007,33(1):65-67.

GONG H, FANG F Z, HU X T. Kinematic view of tool life in rotary ultrasonic side milling of hard and brittle materials [J]. International Journal of Machine Tools & Manufacture, 2010,50:303-307.

GUO B, ZHAO Q L, JACKSON M J. Ultrasonic vibration assisted grinding of micro-structured surfaces on silicon carbide ceramics materials[J]. Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, 2012:553-559.

李伯民,赵波. 现代磨削技术[M]. 北京:机械工业出版社,2003. LI B M, ZHAO B. Modern Grinding Technology[M]. Beijing: Machinery Industry Press,2003. (in Chinese)

MULT H C, SPUR G, HOLL S E. Ultrasonic assisted grinding of ceramics [J]. Journal of Materials Processing Technology, 1996,62:287-293.

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