Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica

Qi GAO

doi:10.3788/OPE.20162410.2490

您当前的位置：

首页 >

文章列表页 >

Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica

Micro/Nano Technology and Fine Mechanics | 更新时间：2020-07-07

- Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica
- Optics and Precision Engineering Vol. 24, Issue 10, Pages: 2490-2497(2016)
- 作者机构：
  
  天津职业大学机电工程学院, 天津 300410
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20162410.2490
  CLC： TN305.2
- Received：10 April 2016，
  
  Accepted：27 May 2016，
  
  Published：2016-10
- 稿件说明：
移动端阅览
Qi GAO. Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica[J]. Optics and precision engineering, 2016, 24(10): 2490-2497.
DOI：

Qi GAO. Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica[J]. Optics and precision engineering, 2016, 24(10): 2490-2497. DOI： 10.3788/OPE.20162410.2490.

摘要

针对传统磨料的固定磨料抛光布容易在加工表面产生划伤，以及材料去除效率低等问题，提出了采用微米级球形聚集氧化硅粒子的固定磨料抛光布。将纳米聚集氧化硅粒子添加到抛光布中，用pH为10.5的碱性水溶液替代传统的抛光液，进行了Si基板的的抛光加工试验。与传统采用不规则形状天然氧化硅及球形熔融氧化硅固定磨料抛光布进行了比较，得到了纳米聚集氧化硅的固定磨料抛光布的加工特性，并讨论了它的基本参数对加工特性的影响。实验得到了与现行纳米抛光液（重量百分比为3%，pH=10.5）相同的材料去除率，加工表面粗糙度降低了约30%。与传统不规则形状天然氧化硅磨料抛光布相比，纳米聚集氧化硅抛光布的磨料为球形，弹性系数仅为其1.4%~60%，因此不易划伤抛光表面。与熔融氧化硅抛光布相比，纳米聚集氧化硅抛光布在pH为10.5的碱性水溶液中磨料表面可吸附的[-OH]离子提高了25倍，使得液相化学去除作用增大至去除率的70%以上。另外，随着纳米聚集氧化硅的微米粒径的增大，固定磨料抛光布的纳米级加工表面粗糙度几乎不变，但对前加工面表面粗糙度的去除能力明显增大，表现出微米粒径效应。

Abstract

A kind of fixed-abrasive pad by using nano-aggregate silica was proposed to overcome the shortcomings of the pads using conventional silica abrasives on its surface scratch and low removal efficiency. The nano-aggregate silica particles were added into the fixed-silica pad

and the polishing experiments of Si wafer were performed using this pad with D.I.water of pH=10.5 instead of conventional nanosilica polishing slurry. Several investigations were performed by comparing with fixed-silica pads using conventional irregular natural silica abrasive and spherical fused silica

the polishing performance the fixed-abrasive pad using nano-aggregate silica were obtained and some factors affecting the pad's polishing performance also were investigated. The material removal rate same as the exiting polishing nanosilica slurry (concentration 3wt%

pH=10.5) was obtained

and polished surface roughness was decreased by about 1/3. Compared with the pad with fixed-conventional natural silica

the proposed fixed-aggregate silica pad is not easy to scratch Si wafer

because the nano-aggregate silica is not only a spherical shape but also has a elastic coefficient down to its 1.4%-60%. As compared with the pad with spherical fused silica

the proposed fixed-aggregate silica pad improves its adsorb[-OH] ion by 25 times in D.I.water of pH=10.5

and allows the removal of material mainly came from chemical removing to be more than 70%. Moreover

nanoscale polished surface roughness is almost no changed with increasing the sizes of fixed-aggregate silica particles

but the polishing ability of pre-polishing surface roughness has been increased

which shows a micron particle size effect.

关键词

Keywords

references

DINESH CHOPRA.Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper Layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed Abrasive pad[P]. USA:patent disclosure, US6276996B12001.

YAGUO LI, YONGBO WU, LIBOZHOU, MASSAKAZU FUJIMOTO.Vibration-assisted dry polishing of fused silica using a fixed-abrasive polisher[J]. International Journal of Machine Tools & Manufacture, 2014, 77:93-102.

ZHI CH D,HAO B CH,HON Y T. Further investigations on fixed abrasive diamond Pellets used for diminishing mid-spatial frequency errors of optical mirrors[J].Applied Optics, 2014, 53(3):327-334.

YUSUKE KOKUBU,YASUHIRO TANI, et al.. Novel non-woven polishing pad impregnated with epoxy resin[C].The 15th International Conference on Precision Engineering,2014:752-753.

JOHN G. Fixed abrasives and selective chemistries:some real advantages for direct STI CMP[C]. Proceedings of CMP-MIC conference, 2002:101.

KIM Y, PARK J H, KIM H J, et al..Self-conditioning of encapsulated abrasive pad in chemical polishing[C]. Proceedings of CMP-MIC Conference, 2002:395-402.

GAO Q,TANI Y,DONG G.Polishing characteristics of micron particles aggregated by nanosilica[J]. Journal of Advanced Mechanical Design,Systems,and Manufacturing, 2015, 9(3):Jamdsm0027.

高綺,谷泰弘. シリカ入り研磨パッドの開発[C]. 2001年度精密工学会秋季大会講演会講演論文集, 2001:406.

GAO Q, TANI Y. Development of fixed silica pad[C].Proceedings of the Japan Society for Precision Engineering,Autumn,2001:406.(in Japanese)

榎本俊之,金澤孝明等. 超微細シリカ凝集砥粒を用いた研磨フィルムによるシリコンウェーハのエッジ仕上げ-高生産性研磨フィルムの開発-[J]. 砥粒加工学会誌,2002, 46(9):458-463.

TOSHIYUKI E,TAKAAKI K,et al..Edge finishing of a silicon wafer with a lapping film utilizing agglomerative superfine silica abrasives-Development of a lapping film with high finishing efficiency[J]. Journal of the Japan Society for Abrasive Technology, 2002, 46(9):458-463.(in Japanese)

PING L,HONG L,RULING C,Polishing properties of porous silica abrasive on hard disk substrate CMP[J]. International Journal abrasive technology, 2010, 3(3):228-237.

ERIC M, Polishing of silicon[J]. SCP and Solid State Technology, 1967,8:27-39.

Views

412

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰