Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser

ZHANG Jian-min; XU Zuo-dong; FENG Guo-bin; LIN Xin-wei; LI Hui; ZHANG Zhen; ZHAO Jun

doi:10.3788/OPE.20162413.0272

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Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser

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- Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser
- Optics and Precision Engineering Vol. 24, Issue 10s, Pages: 272-279(2016)
- 作者机构：
  
  1. 西北核技术研究所激光与物质相互作用国家重点实验室,陕西西安,710024
  2. 中国科学院上海技术物理研究所上海,200083
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20162413.0272
  CLC： TN215;TN249
- Received：18 May 2016，
  
  Revised：12 June 2016，
  
  Published：14 November 2016
- 稿件说明：
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张检民, 徐作冬, 冯国斌等. 脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象[J]. 光学精密工程, 2016,24(10s): 272-279

ZHANG Jian-min, XU Zuo-dong, FENG Guo-bin etc. Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 272-279
张检民, 徐作冬, 冯国斌等. 脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象[J]. 光学精密工程, 2016,24(10s): 272-279 DOI： 10.3788/OPE.20162413.0272.

ZHANG Jian-min, XU Zuo-dong, FENG Guo-bin etc. Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 272-279 DOI： 10.3788/OPE.20162413.0272.

摘要

为研究带有电容反馈跨阻放大器（CTIA）读出电路的线阵碲镉汞焦平面阵列器件在强脉冲激光作用下的响应特性，使用100 ns脉宽的2

m波段红外激光开展了单脉冲辐照效应实验，发现了脉冲激光诱导的焦平面阵列输出信号整体跃变现象，即较强脉冲光辐照后，线阵器件中所有像素的输出信号出现幅度近似一致的上升。对信号跃变实验规律进行了分析，结果表明，信号整体跃变出现阈值约为1

J/cm

，信号跃变量随辐照光强单调上升，但在100

J/cm

左右呈现饱和趋势。对该现象的产生机理进行了分析，排除了光学串扰、电学串扰、热累积效应等因素的影响，得出信号跃变的主要原因在于：强光作用后，供电电路上的耦合电容因为快速放电而出现瞬时压降，导致通过公共P端电极连接的光敏二极管工作状态由零偏转变为反偏。

Abstract

In order to investigate the response characteristics of linear HgCdTe focal plane device with Capacitive Feedback Transimpedance Amplifier (CTIA) readout circuit under intense laser irradiation

single shot irradiating experiments were performed by using a 2

m waveband pulsed infrared laser with a pulse duration of about 100 ns. The pulsed laser induces a new phenomenon of overall signal transition

in which the output signals of all pixels of the linear device have an approximately same increment after irradiated by a relatively intense laser pulse. The rules of the overall signal transition were summarized and it demonstrates that the overall transition occurs at a laser intensity of approximately 1

J/cm

and get saturated at about 100

J/cm

during this period

the transition increases with the increase of the irradiation intensity. Influence factors such as optical crosstalk

electric crosstalk

and thermal accumulation were analyzed and excluded. Further investigation indicates that the overall signal transition is primarily attribute to the voltage drop of the couple capacitor caused by rapid discharge during intense laser irradiating in the power supply circuit

thus resulting in a transformation of operational state of all the photosensitive diodes from zero-bias to reverse-bias

which are connected by a common P-region electrode on surface of the chip.

关键词

Keywords

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Related Author

XU Zuo-dong

ZHANG Jian-min

LIN Xin-wei

SHAO Bi-bo

SHI Yu-bin

LI Yun-peng

Hua LI

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Related Institution

State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System

Roll Forging Research Institute, Jilin University

State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033,China

Graduate University of Chinese Academy of Sciences

Unit 63880 of Chinese People's Liberation Army,Luoyang 471003,China

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