Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering

Hua-song LIU; Xiao YANG; Li-shuan WANG; Yu-gang JIANG; Yi-qin JI; De-ying CHEN

doi:10.3788/OPE.20172501.0021

您当前的位置：

首页 >

文章列表页 >

Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering

Modern Applied Optics | 更新时间：2020-07-07

- Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering
- Editorial Office of Optics and Precision Engineeri Vol. 25, Issue 1, Pages: 21-27(2017)
- 作者机构：
  
  1.中国航天科工飞航技术研究院天津津航技术物理研究所天津市薄膜光学重点实验室, 天津 300308
  2.哈尔滨工业大学光电子技术研究所可调谐激光技术国防科技重点实验室, 黑龙江哈尔滨 150001
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172501.0021
  CLC： O484.4
- Received：30 August 2016，
  
  Accepted：14 September 2016，
  
  Published：25 January 2017
- 稿件说明：
移动端阅览
Hua-song LIU, Xiao YANG, Li-shuan WANG, et al. Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 21-27.
DOI：

Hua-song LIU, Xiao YANG, Li-shuan WANG, et al. Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 21-27. DOI： 10.3788/OPE.20172501.0021.

摘要

薄膜是可见光到近红外波段中重要的高折射率薄膜材料之一。本文针对离子束溅射制备Ta

薄膜的光学带隙特性开展了实验研究工作，基于Cody-Lorentz模型表征了薄膜的光学带隙特性，重点针对薄膜的禁带宽度和Urbach带尾宽度与制备参数之间的相关性进行研究。研究结果表明：在置信概率95%以上时，对Ta

薄膜禁带宽度影响的制备参数，权重大小依次为氧气流量、基板温度、离子束电压；而对Ta

薄膜Urbach带尾宽度影响的制备参数，权重大小依次为基板温度和氧气流量。对于Ta

薄膜在超低损耗激光薄膜和高损伤阈值激光薄膜领域内应用，本文的研究结果给出了同步提高薄膜的禁带宽度和降低带尾宽度的重要工艺参数选择方法。

Abstract

The Ta

thin film is one of the most important high refractive materials in the range from visible to near infrared. This paper researched the optical band gap of the Ta

thin film which was deposited by the Ion Beam Sputtering (IBS). The optical band gap was characterized by the Cody-Lorentz dispersion model. Particularly

the correlations of the band gap and the Urbach with technological parameters were studied respectively. The results show that when the confidence probability is over 95%

the technological parameters are ranked due to their influence coefficients on the band gap as follows: oxygen flow

substrate temperature

and ion beam voltage. Accordingly due to those on the Urbach

the technological parameters are ranked as substrate temperature and oxygen flow. The result provides a method for choosing the key technological parameters to increase the band gap width and reduce the Urbach energy width simultaneously of the Ta

thin film used in the areas of the ultra-low loss thin film and high laser-induced damage threshold thin film.

关键词

Keywords

references

FLORY F. Comparison of different technologies for high quality optical coatings[J]. SPIE, 1990, 1270:172-183.

HERRMANN JR W C. E-beam deposition characteristics of reactively evaporated Ta 2 O 5 for optical interference coatings[J]. Journal of Vacuum Science and Technology, 1981, 18(3):1303-1305.

SCHILLER S, HEISIG U, STEINFELDER K, et al.. Reactive DC sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films[J].Thin Solid Films, 1979, 63(2):369-375.

MARTIN P J, MACLEOD H A, NETTERFIELD R P, et al.. Ion-beam-assisted deposition of thin films[J]. Applied Optics, 1983, 22(1):178-184.

DEMIRYONT H, SITES J R, GEIB K. Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering[J].Applied Optics, 1985, 24(4):490-495.

YOON S G, KIM Y T, KIM H K, et al.. Comparison of residual stress and optical properties in Ta 2 O 5 thin films deposited by single and dual ion beam sputtering[J]. Materials Science and Engineering:B, 2005, 118(1-3):234-237.

YOON S G, KIM H K, KIM M J, et al.. Effect of substrate temperature on surface roughness and optical properties of Ta 2 O 5 using ion-beam sputtering[J]. Thin Solid Films, 2005, 475(1):239-242.

HUANG A P, CHU P K. Characteristics of interface between Ta 2 O 5 thin film and Si (100) substrate[J]. Surface and Coatings Technology, 2005, 200(5-6):1714-1718.

CHENG W H, CHI S F, CHU A K. Effect of thermal stresses on temperature dependence of refractive index for Ta 2 O 5 dielectric films[J]. Thin Solid Films, 1999, 347(1-2):233-237.

LIU W J, CHIEN C H. Influences of residual argon gas and thermal annealing on Ta 2 O 5 thin films[J]. Japanese Journal of Applied Physics, 2005, 44(1R):181.

UTHANNA S, CHANDRA S V J, REDDY P S, et al.. Effect of post-deposition annealing on the structural, electrical, and optical properties of DC magnetron sputtered Ta 2 O 5 films[J]. J. Phys.:Conf. Ser., 2008, 114(1):012035.

数学手册[M]. 北京:高等教育出版社,1979:853-858.

Handbook of Mathematics[M]. Beijing:Higher Education Press, 1979:853-858.(in Chinese)

FERLAUTO A S, FERREIRA G M, PEARCE J M, et al.. Analytical model for the optical functions of amorphous semiconductors from the near infrared to ultraviolet:Applications in thin film photovoltaics[J]. Journal of Applied Physics, 2002, 92(5):2424-2436.

刘华松, 季一勤, 张锋, 等. 金属氧化物薄膜在中波红外光谱区内光学常数色散特性[J]. 光学学报, 2014, 34(8):0831003.

LIU H S, JI Y Q, ZHANG F, et al.. Dispersive properties of optical constants of some metallic oxide thin films in the mid-infrared regions[J]. Acta Optica Sinica, 2014, 34(8):0831003.(in Chinese)

何少华, 文竹青, 娄涛. 试验设计与数据处理[M]. 长沙:国防科技大学出版社,2002:62-92.

HE SH H, WEN ZH Q, LOU T. Experiment and Data Handle[M]. Changsha:National University of Defence Technology Press, 2002:62-92.(in Chinese)

Views

973

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Fabrication and properties of plasmonic hot-electron phototransistor

Related Author

Guang-dian CHEN

Yu-sheng ZHAI

Yu-pei LI

Related Institution

Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰