Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity

Yan ZHOU; Guo-shun PAN; Xiao-lei SHI; Hua GONG; Chun-li ZOU; Jiao-ning TANG

doi:10.3788/OPE.20172501.0100

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Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity

Micro/Nano Technology and Fine Mechanics | 更新时间：2020-07-07

- Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity
- Editorial Office of Optics and Precision Engineeri Vol. 25, Issue 1, Pages: 100-106(2017)
- 作者机构：
  
  1.清华大学摩擦学国家重点实验室, 北京 100084
  2.深圳清华大学研究院深圳市微纳制造重点实验室, 广东深圳 518057
  3.广东省光机电一体化重点实验室, 广东深圳 518057
  4.深圳市特种功能材料重点实验室深圳大学, 广东深圳 518060
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172501.0100
  CLC： TH161+.14
- Received：10 June 2016，
  
  Accepted：17 July 2016，
  
  Published：25 January 2017
- 稿件说明：
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Yan ZHOU, Guo-shun PAN, Xiao-lei SHI, et al. Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 100-106.
DOI：

Yan ZHOU, Guo-shun PAN, Xiao-lei SHI, et al. Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 100-106. DOI： 10.3788/OPE.20172501.0100.

摘要

LED蓝宝石衬底的表面质量会极大影响到后续外延质量，进而影响到LED器件性能。蓝宝石研磨片经Al

磨粒粗抛液、SiO

磨粒精抛液下进行化学机械抛光（CMP），最终表面经原子力显微镜（AFM）所测表面粗糙度达到0.101 nm，获得亚纳米级粗糙度超光滑表面，并呈现出原子台阶形貌。同时，通过使用Zygo表面形貌仪、AFM观察蓝宝石从研磨片经Al

粗抛液、SiO

精抛液抛光后的表面变化，阐述蓝宝石表面原子台阶形貌的形成原因，提出蓝宝石原子级超光滑表面形成的CMP去除机理。通过控制蓝宝石抛光中的工艺条件，获得a-a型、a-b型两种不同周期规律性的台阶形貌表面，并探讨不同周期规律性台阶形貌的形成机理。

Abstract

Surface quality of LED sapphire substrate influences epitaxy quality greatly

and further influences the performance of LED devices. After the chemical mechanical polishing (CMP) of slurry including Al

abrasive and SiO

abrasive of sapphire grinding wafer

finally ultra smooth surface of sub-nanometric roughness was achieved with surface roughness reaching 0.101 nm measured by atomic force microscope (AFM) and atomic step morphology was presented. Using Zygo profiler and AFM to observe the variations of surface of sapphire grinding wafer from being polished by Al

abrasive slurry to SiO

abrasive slurry

the generation reason of atomic step morphology of sapphire surface was elaborated

and the CMP removal mechanism of the sapphire atomically ultra-smooth surface was proposed. Through controlling the process conditions of sapphire polishing

a-a type and a-b type atomic step periodic morphologies were obtained respectively. The experimental result shows the chemical reaction speed of double-atom layer 6H1

6H2 of different adsorptive energy between layers is slightly different. When the revolving speed is relatively slower and mechanical effect Rm is slightly weaker than chemical effect

the difference of chemical reaction speed Rc of different double-atom layer is also presented

and mechanical removal only acts on softening double-atom layer with sapphire polishing surface presenting step morphology of different width of a-b type; while when the revolving speed is relatively faster and mechanical effect Rm is slightly stronger than chemical effect

the mechanical removal speed of each double-atom layer is the same with sapphire polishing surface presenting step morphology of the same width of a-a type.

关键词

Keywords

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