Enhancement of photovoltaic performance of MoS<sub>2</sub>/SiO<sub>2</sub>/Si heterojunction solar cells by film annealing

He-ju XU; Bin ZHANG; Yu ZHANG; Ri-dong CONG; Wei YU

doi:10.3788/OPE.20172503.0597

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Enhancement of photovoltaic performance of MoS₂/SiO₂/Si heterojunction solar cells by film annealing

更新时间：2020-07-07

- Enhancement of photovoltaic performance of MoS₂/SiO₂/Si heterojunction solar cells by film annealing
- Optics and Precision Engineering Vol. 25, Issue 3, Pages: 597-602(2017)
- 作者机构：
  
  1.河北大学物理科学与技术学院, 河北保定 071002
  2.华北理工大学理学院, 河北唐山 063009
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172503.0597
  CLC： TM914.42;O475
- Received：13 October 2016，
  
  Accepted：15 November 2016，
  
  Published：25 March 2017
- 稿件说明：
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He-ju XU, Bin ZHANG, Yu ZHANG, et al. Enhancement of photovoltaic performance of MoS₂/SiO₂/Si heterojunction solar cells by film annealing[J]. Optics and precision engineering, 2017, 25(3): 597-602.
DOI：

He-ju XU, Bin ZHANG, Yu ZHANG, et al. Enhancement of photovoltaic performance of MoS₂/SiO₂/Si heterojunction solar cells by film annealing[J]. Optics and precision engineering, 2017, 25(3): 597-602. DOI： 10.3788/OPE.20172503.0597.

摘要

为了制备高效的MoSi/SiO

/Si异质结太阳能电池，利用磁控溅射技术制备MoS

薄膜，并在硫气氛下对MoS

薄膜进行退火处理。分别用退火和未退火的MoS

薄膜制备MoS

/SiO

/Si异质结太阳能电池，研究了退火对MoS

薄膜的微观结构和MoS

/SiO

/Si异质结太阳能电池光电性能的影响。实验结果显示，相比于未退火的，经过退火处理的MoS

薄膜的拉曼峰半高宽（FWHM）变窄，峰强增强，显微荧光光谱中也出现明显的激子发光峰。由此表明，退火处理使MoS

薄膜由非晶向晶态转变，薄膜的体缺陷减少，异质结太阳能电池的开路电压和填充因子得到提升，器件转换效率从0.94%提高到1.66%。不同光照强度下的

测量和暗态的

测量结果表明，经退火处理的MoS

薄膜的异质结太阳能电池具有较高的收集电压和更接近于1的理想因子，这归因于退火导致MoS

薄膜的体缺陷的减少，近而降低了MoS

/ SiO

/Si异质结太阳能电池器件的体缺陷复合。

Abstract

MoS

thin films were prepared using magnetron sputtering technology and annealed in sulfur surrounding. Then

MoS

/SiO

/Si heterojunction solar cells were fabricated with annealed and unannealed MoS

thin films respectively. The effects of annealing on the microstructure of MoS

thin films and the photovoltaic performance of MoS

/SiO

/Si heterojunction solar cells were investigated. Compared with the unannealed MoS

thin film

the full width at half maximum (FWHM) of Raman peaks of the annealed MoS

thin film becomes narrower

the peak intensities are stronger

and exciton peaks are emerged in microscopic PL spectrum. The results indicate that the MoS

films transformed from amorphous to crystalline by annealing and bulk defects in films were reduced

which can increase the open-circuit voltage and the fill factor as well as the conversion efficiency (from 0.94% to 1.66%) of the devices. The variable intensity

measurements and the dark

measurements demonstrate that the annealed MoS

/SiO

/Si heterojunction solar cells have higher collection voltage and ideality factor

nearly close to 1

which due to the decrease of the bulk defects density of the MoS

thin films as well as the decline of the defects recombination of the device leaded by annealing.

关键词

Keywords

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Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing

DOI：10.3788/OPE.20172503.0597

摘要

Abstract

关键词

Keywords

references

Enhancement of photovoltaic performance of MoS₂/SiO₂/Si heterojunction solar cells by film annealing