Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone

Xiao-wei LI; Yun LI; Yan ZHENG; Dong-ze GAO; Wei YU

doi:10.3788/OPE.20172504.0850

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Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone

Modern Applied Optics | 更新时间：2020-07-07

- Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone
- Optics and Precision Engineering Vol. 25, Issue 4, Pages: 850-856(2017)
- 作者机构：
  
  1.河北大学物理科学与技术学院, 河北保定 071000
  2.中国乐凯集团有限公司研究院, 河北保定 071020
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172504.0850
  CLC： TN304.055;O472.8
- Received：13 October 2016，
  
  Accepted：03 December 2016，
  
  Published：25 April 2017
- 稿件说明：
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Xiao-wei LI, Yun LI, Yan ZHENG, et al. Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone[J]. Optics and precision engineering, 2017, 25(4): 850-856.
DOI：

Xiao-wei LI, Yun LI, Yan ZHENG, et al. Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone[J]. Optics and precision engineering, 2017, 25(4): 850-856. DOI： 10.3788/OPE.20172504.0850.

摘要

为了研究硅异质结太阳电池中纳米硅氧薄膜的光电特性，采用甚高频等离子体增强化学气相沉积技术制备了一系列不同晶态比例的nc-SiO

：H薄膜，利用拉曼散射光谱（Raman）、傅里叶变换红外光谱（FTIR）、紫外可见透射光谱以及稳/瞬态光致发光谱等检测手段分别对薄膜的微观结构、键合配置，能带特征以及发光特性进行了表征。薄膜结构特征分析显示，随着氧掺入量的增加，薄膜由微晶向非晶转化，光学带隙逐渐增加，而处在相变区（晶化度约为10%，nc-Si尺寸约为3 nm）的薄膜具有较高的中程有序度、较小的结构因子和较为致密的微观结构。薄膜稳/瞬态光致发光结果显示，一定量的氧掺入可以钝化缺陷、增强发光，而相变区薄膜的发光强度最大，表明较小尺寸的nc-Si具有较强的量子限制效应，nc-Si的量子限制效应发光是主要的载流子复合机制。

Abstract

A series of nc-SiO

:H films were prepared by Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD)

for the properties study of nanocrystalline silicon oxide films in silicon heterojunction solar cells. The microstructure

bonding configuration

band characteristics and photoluminescence properties of the films were characterized by Raman scattering spectra (Raman)

Fourier transform infrared spectra (FTIR)

UV-VIs transmission spectra and steady/transient state photoluminescence spectra (PL)

respectively. Raman analysis shows that the film structure changes from microcrystalline to amorphous with the increasing of oxygen content. The films proves to have better ordered and denser structure in the phase transformation zone

where the crystallization degree is about 10% and nc-Si particles is about 3 nm. The steady/transient photoluminescence (PL) analysis shows that certain amount of oxygen could passivate defects

thus enhancing the photoluminescence. The highest luminescence intensity was achieved in the phase transformation zone. It indicated that stronger quantum confinement effect PL induced by the smaller nc-Si particles should be the main carrier recombination mechanism.

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references

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