Grinding wheel for low-damage grinding of silicon wafers and its grinding performance

Zi-guang WANG; Shang GAO; Xiang-long ZHU; Zhi-gang DONG; Ren-ke KANG

doi:10.3788/OPE.20172510.2689

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Grinding wheel for low-damage grinding of silicon wafers and its grinding performance

Micro/Nano Technology and Fine Mechanics | 更新时间：2020-08-13

- Grinding wheel for low-damage grinding of silicon wafers and its grinding performance
- Optics and Precision Engineering Vol. 25, Issue 10, Pages: 2689-2696(2017)
- 作者机构：
  
  大连理工大学精密与特种加工教育部重点实验室, 辽宁大连 116024
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172510.2689
  CLC： TN305.2
- Received：28 April 2017，
  
  Accepted：19 May 2017，
  
  Published：25 October 2017
- 稿件说明：
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Zi-guang WANG, Shang GAO, Xiang-long ZHU, et al. Grinding wheel for low-damage grinding of silicon wafers and its grinding performance[J]. Optics and precision engineering, 2017, 25(10): 2689-2696.
DOI：

Zi-guang WANG, Shang GAO, Xiang-long ZHU, et al. Grinding wheel for low-damage grinding of silicon wafers and its grinding performance[J]. Optics and precision engineering, 2017, 25(10): 2689-2696. DOI： 10.3788/OPE.20172510.2689.

摘要

针对传统金刚石砂轮磨削硅片存在的表面/亚表面损伤问题，研制了一种用于硅片化学机械磨削加工的新型常温固化结合剂软磨料砂轮。根据化学机械磨削加工原理和单晶硅的材料特性，设计的软磨料砂轮以氧化铈为磨料，二氧化硅为添加剂，氯氧镁为结合剂。研究了软磨料砂轮的制备工艺，分析了软磨料砂轮的微观组织结构和成分。通过测量加工硅片的表面粗糙度、表面微观形貌和表面/亚表面损伤，进一步研究了软磨料砂轮的磨削性能。最后，与同粒度金刚石砂轮磨削和化学机械抛光（CMP）加工的硅片进行了对比分析。结果表明，采用软磨料砂轮磨削的硅片其表面粗糙度

1 nm，亚表面损伤仅为深度

30 nm的非晶层，远好于金刚石砂轮磨削硅片，接近于CMP的加工水平，实现了硅片的低损伤磨削加工。

Abstract

A new Soft Abrasive Grinding Wheel (SAGW) was developed for Chemo-mechanical Grinding (CMG) of silicon wafers to overcome the surface/subsurface damage of the silicon wafer machined by traditional ultra-precision grinding. According to the principle of the CMG and the material characteristics of monocrystalline silicon

the SAGW took the cerium oxide (CeO

) as abrasive

silicon dioxide (SiO

)as additive

and the chlorine oxide magnesium as binding agent. The preparation process of the SAGW was investigated

and its microstructure and composition were analyzed. By measuring the surface roughness

surface microstructure and the surface/subsurface damage

the grinding performance of the SAGW was further explored. In the end

fabricated silicon wafer with the same particle size by the SAGW

Chemical Mechanical Polishing (CMP) and diamond grinding wheel was compared and analyzed. The results show that the surface roughness of the silicon wafer by the SAGW is less than 1 nm and its subsurface damage layer is about 30 nm in thickness

which is comparable to that produced by the CMG and much better than that of the diamond wheel. This study demonstrates that the developed SAGW achieves the low-damage grinding of silicon wafers.

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Keywords

references

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