Terahertz CMOS transistor model and experimental analysis

Jing-shui ZHANG; Lingqin KONG; Li-quan DONG; Yue-jin ZHAO

doi:10.3788/OPE.20172512.3128

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Terahertz CMOS transistor model and experimental analysis

Modern Applied Optics | 更新时间：2020-07-07

- Terahertz CMOS transistor model and experimental analysis
- Optics and Precision Engineering Vol. 25, Issue 12, Pages: 3128-3136(2017)
- 作者机构：
  
  北京理工大学光电学院, 北京 100081
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20172512.3128
  CLC： TN386
- Received：01 June 2017，
  
  Accepted：05 July 2017，
  
  Published：25 December 2017
- 稿件说明：
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Jing-shui ZHANG, Lingqin KONG, Li-quan DONG, et al. Terahertz CMOS transistor model and experimental analysis[J]. Optics and precision engineering, 2017, 25(12): 3128-3136.
DOI：

Jing-shui ZHANG, Lingqin KONG, Li-quan DONG, et al. Terahertz CMOS transistor model and experimental analysis[J]. Optics and precision engineering, 2017, 25(12): 3128-3136. DOI： 10.3788/OPE.20172512.3128.

摘要

针对商业CMOS（互补金属氧化物半导体）场效应管模型在高频下易失效的问题，运用ADS软件构建了基于经典动力学理论的非线性RCL传输线模型，并结合实测数据说明了本文模型的精准性及太赫兹波段场效应管的工作原理。构建了基于经典动力学理论的非线性RCL传输线模型仿真系统，并将其与商业模型仿真结果进行对比，分析了在太赫兹波段本文模型与商业模型的区别。测试了现有场效应管探测器的频率响应，并对实测数据与两种模型仿真数据进行对比，说明本文模型提高了预测精度。最后，结合3

原则分析了场效应管沟道尺寸对载流子散射效应的影响，以及场效应管进入弹道工作模式的条件。实验结果表明：本文模型与商业模型的区别主要在于模型中是否存在电感部分，该部分可作为场效应管沟道中载流子动量是否守恒及散射效应是否可以忽略的表征参数。相较于商业模型，本文模型对探测器最佳频率工作点的预测精准度可提高0.3%，对探测器带宽的预测精准度可提高约10%。该项研究为CMOS场效应管模型的精确建立及仿真分析提供了良好基础。

Abstract

As the commercial CMOS (Complementary Metal Oxide Semiconductor) transistor model will lose the accuracy in a high frequency range

a nonlinear RCL transmission line model based on classic kinetic theory was developed with ADS software. The accuracy of proposed model and the working principle of the CMOS in THz range were discussed based on measured data. A simulation system for the nonlinear RCL transmission line model was constructed

and simulation results were compared with that of commercial model and the difference between the proposed model and the commercial CMOS model in THz range was analyzed. Then

the frequency responses of current CMOS transistors were tested

tested data were compared with those of the simulation data from the two kinds of models. The results demonstrate that the proposed model has been improved the prediction accuracy. Finally

the effects of channel size of transistor on the scattering effect of carriers were analyzed and conditions of transistor to turn on ballistic mode were given with 3

rules. The results show that the difference between the two models mainly focuses on the inductance part

which could represent the momentum conservation of carriers in transistor channel and if the scattering effect could be neglected or not. Compared with the commercial model

the prediction accuracy for the optimal resonant frequency of a detector has improved by 0.3%

and that for the optimal working bandwidth of the detector has increased about 10%. This study provides a good foundation for the accurate establishment and simulation analysis of CMOS transistor models.

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Keywords

references

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