Aluminum nitride Lamb wave piezoelectric resonators based on ultrathin silicon substrates

Chuan-yu LI; Hui KONG; Yu-guo TANG; Zhi-qi ZHANG; Zhen GUO; Wei ZHANG; Lian-qun ZHOU

doi:10.3788/OPE.20182602.0371

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Aluminum nitride Lamb wave piezoelectric resonators based on ultrathin silicon substrates

Micro/Nano Technology and Fine Mechanics | 更新时间：2020-07-05

- Aluminum nitride Lamb wave piezoelectric resonators based on ultrathin silicon substrates
- Optics and Precision Engineering Vol. 26, Issue 2, Pages: 371-379(2018)
- 作者机构：
  
  1.中国科学院苏州生物医学工程技术研究所, 江苏苏州 215163
  2.中国科学院大学, 北京 100049
  3.中国科学技术大学, 安徽合肥 230026
- 作者简介：
  
  ZHOU Lian-qun, E-mail:zhoulq@sibet.ac.cn
- 基金信息：
- DOI：10.3788/OPE.20182602.0371
  CLC： TP212.1;TP212.9
- Received：27 May 2017，
  
  Accepted：23 July 2017，
  
  Published：25 February 2018
- 稿件说明：
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Chuan-yu LI, Hui KONG, Yu-guo TANG, et al. Aluminum nitride Lamb wave piezoelectric resonators based on ultrathin silicon substrates[J]. Optics and precision engineering, 2018, 26(2): 371-379.
DOI：

Chuan-yu LI, Hui KONG, Yu-guo TANG, et al. Aluminum nitride Lamb wave piezoelectric resonators based on ultrathin silicon substrates[J]. Optics and precision engineering, 2018, 26(2): 371-379. DOI： 10.3788/OPE.20182602.0371.

摘要

针对Lamb波压电声波传感器高品质因数（Q值）、低检测极限（LOD）和易集成的性能要求，本文基于SOI（Silicon-on-insulator）硅片，通过底层硅（Handling layer）干法刻蚀和中间层（Boxing layer）自截止的方法实现2

m超薄均一的硅衬底结构，然后沉积2

m厚具备高C轴择优取向的氮化铝（AlN）压电薄膜。传感器薄膜区域外设置双端增强反射栅结构用于提高Q值，从而有效降低器件的检测极限，并通过微量水分测试验证性能。该谐振器零阶反对称模式（A

）和零阶对称模式（S

）的谐振状态的实测结果和COMSOL二维模型仿真结果一致，所制作的Lamb波谐振器A

模式的主峰Q值为703，S

模式的主峰Q值为403。微量水分测试S

模式的检测极限优于A

模式，最低检测极限值为0.06% RH。结果表明，氮化铝超薄硅衬底Lamb波压电谐振器能够实现微量水分等高精度检测。

Abstract

In order to achieve the performance requirements of piezoelectric acoustic Lame wave sensor with high quality factor (Q factor)

low limit of detection (LOD) and easy integration

a method was presented in the paper. First

an ultrathin and uniform 2

m-thick silicon substrate was obtained by dry etching of handling silicon layer and automatic stopping of boxing layer based on SOI (Silicon-on-insulator) wafer

and then a 2

m-thick Aluminum Nitride (AlN) piezoelectric thin film with high C axis oriented was deposited. High Q factor could be obtained by the double end reflectors outside the membrane. The LOD could be effectively reduced by using the resonator

and could be verified by the application of trace moisture detection. The experimental results of the lowest anti-symmetric mode (A

) and symmetric mode (S

) were consistent with the simulation results obtained by using software CMOSOL. The prominent peak value of Q factor of the resonator for A

mode was 703

and S

was 403. The limit of detection of S

mode was better than that of A

mode

whose LOD was 0.06%RH. It can be concluded that Lamb wave resonator designed in the paper can be utilized as the high precision detection such as trace moisture detection.

关键词

Keywords

references

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