To reduce the reflection loss of Micro-Electro-Mechanical System (MEMS) double-channel microwave power sensors and improve their measurement accuracy
it is necessary to investigate the impedance matching of MEMS cantilever beams. First
an analytical model of the S-parameters was constructed using the structure of the MEMS double-channel microwave power sensor. The impedance matching of the MEMS double-channel microwave power sensor was analyzed
and the relationship between the spacing of the MEMS cantilever beams and return loss
S
11
was obtained. The simulation was performed using a finite element software-high frequency structure simulator (HFSS)-and the simulation results were compared with the corresponding analytical results. Next
a double-channel microwave power sensor was designed and fabricated. Finally
the impedance matching of the sensor was tested and analyzed. The experimental results reveal that for a microwave signal in the frequency range 8-12 GHz
when the distance between the MEMS cantilever beam is 1.6
μ
m
the sensor has a return loss of less than -19 dB. The analytical and simulation results are in good agreement
confirming that the analytical model of the S-parameters can reflect the impedance matching of MEMS double-channel microwave power sensors. Thus
the analytical model can be used as a guide for the design of MEMS double-channel microwave power sensors.
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