Ultraviolet absorption film technology based on ion beam sputtering Ta<sub>2</sub>O<sub>5</sub> thin films

Yu-gang JIANG; Hua-song LIU; Dan CHEN; Li-shuan WANG; Shi-da LI; Dan-dan LIU; Cheng-hui JIANG; Yi-qin JI

doi:10.3788/OPE.20192703.0527

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Ultraviolet absorption film technology based on ion beam sputtering Ta₂O₅ thin films

Modern Applied Optics | 更新时间：2020-08-13

- Ultraviolet absorption film technology based on ion beam sputtering Ta₂O₅ thin films
- Optics and Precision Engineering Vol. 27, Issue 3, Pages: 527-532(2019)
- 作者机构：
  
  1.天津津航技术物理研究所天津市薄膜光学重点实验室，天津 300308
  2.光电材料智能表面织构技术联合实验室，天津 300308
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20192703.0527
  CLC： O484.4
- Received：30 October 2018，
  
  Accepted：20 December 2018，
  
  Published：15 March 2019
- 稿件说明：
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Yu-gang JIANG, Hua-song LIU, Dan CHEN, et al. Ultraviolet absorption film technology based on ion beam sputtering Ta₂O₅ thin films[J]. Optics and precision engineering, 2019, 27(3): 527-532.
DOI：

Yu-gang JIANG, Hua-song LIU, Dan CHEN, et al. Ultraviolet absorption film technology based on ion beam sputtering Ta₂O₅ thin films[J]. Optics and precision engineering, 2019, 27(3): 527-532. DOI： 10.3788/OPE.20192703.0527.

摘要

为获得高性能紫外激光薄膜元件，急需研制紫外高反射吸收薄膜，实现吸收损耗的精确测量。本文采用离子束溅射技术，通过调控氧气流量实现了具有不同吸收的Ta

薄膜的制备。以Ta

薄膜作为高折射率材料，设计了355 nm的紫外高反射吸收薄膜。采用离子束溅射沉积技术，在熔融石英基底上制备了355 nm的吸收薄膜，对于

=5%的紫外吸收光谱，在355 nm的透射率、反射率和吸收率分别为0.1%，95.0%和4.9%；对于

=12%的紫外吸收光谱，在355 nm的透射率、反射率和吸收率分别为0.1%，87.4%和12.5%。实验结果表明，采用离子束溅射沉积技术，可以实现不同吸收率的355 nm高反射吸收薄膜的制备，对于基于光热偏转测量技术的紫外光学薄膜弱吸收测量仪的定标具有重要的意义。

Abstract

To obtain a high-performance ultraviolet laser thin film

developing one that achieves accurate measurement of absorption loss is essential. In this study

thin films with different absorptivities were deposited on fused quartz substrates using an ion-beam sputtering technique and by changing the oxygen flow. Ta

thin films were used as high refractive index materials

and UV high reflectance absorption thin films of 355 nm were developed. Two types of 355-nm absorption thin films were prepared on fused quartz substrates using an ion-beam sputtering deposition technique. The transmissivity

reflectivity

and absorptivity at a wavelength of 355 nm were 0.1%

95.0%

and 4.9% for 5% UV absorption spectra

respectively

whereas those at the wavelength of 355 nm were 0.1%

87.4% and 12.5% for 12% UV absorption spectra

respectively. The experimental results show that the preparation of high reflectance thin films of 355 nm with different absorptivity can be prepared by ion-beam sputtering deposition. This is of great significance to the calibration of UV thin film weak absorption measuring instruments based on photothermal deflection measurement technology.

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references

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Ultraviolet absorption film technology based on ion beam sputtering Ta2O5 thin films

DOI：10.3788/OPE.20192703.0527

摘要

Abstract

关键词

Keywords

references

Ultraviolet absorption film technology based on ion beam sputtering Ta₂O₅ thin films