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网络出版日期:1992-04-15,
纸质出版日期:1992-04-15
移动端阅览
金成国. 掺杂BaF<SUB>2</SUB>晶体的性能研究[J]. 光学精密工程, 1992,(2): 26-30
Jin Chengguo. Investigation on the Properties of Doped Barium Fluoride[J]. Editorial Office of Optics and Precision Engineering, 1992,(2): 26-30
金成国. 掺杂BaF<SUB>2</SUB>晶体的性能研究[J]. 光学精密工程, 1992,(2): 26-30 DOI:
Jin Chengguo. Investigation on the Properties of Doped Barium Fluoride[J]. Editorial Office of Optics and Precision Engineering, 1992,(2): 26-30 DOI:
为提高 BaF
2
晶体的性能
生长了掺杂 LaF
3
、NaF、CeF
及纯的 BaF
晶体
测试了其紫外透过谱、X 射线激发发射谱、紫外光激发谱、抗辐照性能及能谱
发现只有掺杂1.0%LaF
的 BaF
晶体能大幅度降低慢成份而对快成份影响不大且在10
5
~10
6
rad辐照剂量之下和纯 BaF
一样在快成份光输出上有抗辐照能力
首次发现掺杂 LaF
的BaF
晶体紫外光激发谱中
385nm 处新激发峰。
Pure BaF
crystal and La.Na.Ce doped BaF
crystals have been grown to improve the properties of BaF
crystal.UV transmission spectra
X-ray emission spectra
UV light excitation spectra
radiation hard property and energy spectrum of these crystals have been investigated.We found only 1% La deped BaF
crystal showed strong suppression on slow component and very slight reduction to fast component and 1% La doped BaF
crystal had the same radiation resistance as the pure BaF
in terms of its fast component light output when the radiation doses chauged from 10
rad to 10
rad.We first found 385nmnew excitation peak when La doped BaF
crystal was excited by UV light.
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