Current Status of Extreme Ultraviolet Lithography in Japan

Current Status of Extreme Ultraviolet Lithography in Japan Current Status of Extreme Ultraviolet Lithography in Japan Kazuya Ota Kazuya Ota first-author Iwao Nishiyama Iwao Nishiyama Taro Ogawa Taro Ogawa Ei Yano Ei Yano Shinji Okazaki Shinji Okazaki ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198, Japan ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198, Japan ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198, Japan ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198, Japan ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography. ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography. ultraviolet lithography aspherical mirrors alignment systems ultraviolet lithography aspherical mirrors alignment systems TN305.7 2001-08-29 2001-09-22 2001-10-15 2001-10-15 2020-08-11 5 9