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1. 中国科学院 长春光学精密机械与物理研究所,吉林 长春,130033
2. 中国科学院激发态物理开放研究实验室,吉林 长春,130021
收稿日期:2000-12-01,
修回日期:2001-01-20,
网络出版日期:2001-04-15,
纸质出版日期:2001-04-15
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初国强, 王子君, 赵家民, 刘毅南, 刘云, 刘星元, 王立军. 氧离子辅助法沉积ITO透明导电膜的研究[J]. 光学精密工程, 2001,(2): 169-173
CHU Guo-qiang, WANG Zi-jun, ZHAO Jia-min, LIU Yi-nan, LIU Yun, LIU Xing-yuan, WANG Li-jun [WT5BX](Laboratory-of, Excited, State, Processes, Changchun, Institute-of, Optics, Fine, Mechanics-and, Physics, Chinese, Academy-of, Sciences, Changchun 00, . Transparent conductive film (ITO) deposited by IAD[J]. Editorial Office of Optics and Precision Engineering, 2001,(2): 169-173
初国强, 王子君, 赵家民, 刘毅南, 刘云, 刘星元, 王立军. 氧离子辅助法沉积ITO透明导电膜的研究[J]. 光学精密工程, 2001,(2): 169-173 DOI:
CHU Guo-qiang, WANG Zi-jun, ZHAO Jia-min, LIU Yi-nan, LIU Yun, LIU Xing-yuan, WANG Li-jun [WT5BX](Laboratory-of, Excited, State, Processes, Changchun, Institute-of, Optics, Fine, Mechanics-and, Physics, Chinese, Academy-of, Sciences, Changchun 00, . Transparent conductive film (ITO) deposited by IAD[J]. Editorial Office of Optics and Precision Engineering, 2001,(2): 169-173 DOI:
论述了ITO膜的导电及生长机理
讨论了离子辅助(IAD)电子枪蒸镀ITO膜的方法中
膜的组分、氧分压、衬底温度和蒸发速率等几个参数对ITO膜光电性能的影响
在选择合适的工艺条件下制备ITO膜
电阻率约3×10
-4
Ω
·
cm
可见光平均透过率高于80%。并用原子力显微镜(AFM)对溅射及蒸发膜进行了表面面型测试。
In addition to describing the conduction and growing mechanism of ITO films
the paper also discusses the influence of the ratio of indium to tin
the oxygen partial pressure
the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions
electrical resistivity is about 3.0?10
-4
cm
and the average visible transmittance is better than 80%. By an atomic force microscope
the surface of the film had been examined.
Mizuhashi M. Electrical properties of vacuum-deposited indium oxide films[J]. Thin Solid Films,1980(70):91-99.
Cui Yuanri,Xu Xinghao.Deposition of transparent conducting indium tin oxide thin films by reactive ion plating[J].Thin Solid Films, 1984(115):195-201.
Hamberg I,Grmqvist C G.Evaporated sn-doped indium oxide films: basic optical properties and applications to energy-efficient windows[J].J. Appl. Phys, 1986,60(11):123-159.
Kim J.S, Cacialli F. Increase of carriers density and reduction of hall mobilities in oxygen plasma treated indium-tin-oxide anodes[J]. Appl.Phys.Lett,1999,75(5):19-21.
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