厚度效应对Pb(Zr0.53Ti0.47)O3薄膜微结构、铁电、介电性能的影响

梁龙; 吴斌; 杨德军

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厚度效应对Pb(Zr_0.53Ti_0.47)O₃薄膜微结构、铁电、介电性能的影响

论文 | 更新时间：2020-08-12

- 厚度效应对Pb(Zr_0.53Ti_0.47)O₃薄膜微结构、铁电、介电性能的影响
- Thickness effects on the microstructure, ferroelectric and dielectric properties of highly (111) oriented Pb(Zr_0.53 Ti_0.47)O₃ thin films
- 光学精密工程 2002年10卷第5期页码：523-527
- 作者机构：
  
  1. 北京航空材料研究院, 先进复合材料国防科技重点实验室北京,100095
  2. 二炮北京军代局北京,100083
  3. 二炮驻699厂军代室北京,100083
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.4
- 收稿日期：2001-10-16，
  
  修回日期：2002-07-22，
  
  网络出版日期：2002-10-15，
  
  纸质出版日期：2002-10-15
- 稿件说明：
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梁龙, 吴斌, 杨德军. 厚度效应对Pb(Zr0.53Ti0.47)O3薄膜微结构、铁电、介电性能的影响[J]. 光学精密工程, 2002,(5): 523-527

LIANG Long, WU Bin, YANG De-jun. Thickness effects on the microstructure, ferroelectric and dielectric properties of highly (111) oriented Pb(Zr0.53 Ti0.47)O3 thin films[J]. Editorial Office of Optics and Precision Engineering, 2002,(5): 523-527
梁龙, 吴斌, 杨德军. 厚度效应对Pb(Zr0.53Ti0.47)O3薄膜微结构、铁电、介电性能的影响[J]. 光学精密工程, 2002,(5): 523-527 DOI：

LIANG Long, WU Bin, YANG De-jun. Thickness effects on the microstructure, ferroelectric and dielectric properties of highly (111) oriented Pb(Zr0.53 Ti0.47)O3 thin films[J]. Editorial Office of Optics and Precision Engineering, 2002,(5): 523-527 DOI：

摘要

用改进的溶胶-凝胶法在Pt(111)/Ti/SiO

/Si(100)衬底上制备了不同厚度的高度(111)取向的Pb(Zr

0.53

0.47

薄膜.运用X射线衍射(XRD)和原子力显微镜(AFM)分析了薄膜的微结构

原子力显微镜表明厚度为0.3μm和0.56μm的PZT薄膜的晶粒尺寸和表面粗糙度分别为0.2～0.3μm、2～3μm和0.92nm、34nm.0.3μm和0.56μm PZT薄膜的剩余极化(Pr)和矫顽场(Ec)分别为32.2μC/

、79.9kV/cm

27.7μC/cm

、54.4kV/cm;在频率100KHz时

薄膜的介电常数和介电损耗分别为539、0.066

821、0.029.

Abstract

Lead zirconate titanate Pb(Zr

0.53

0.47

(PZT) ferroelectric thin films with various thickness were grown on Pt(111)/Ti/SiO

/Si(100) substrates by a simple sol-gel process

without reflux or high temperature distillation to remove water. The thin films were annealed at 550～600℃ in oxygen atmosphere by rapid thermal annealing (RTA)

the highly (111)-oriented PZT thin films have been obtained. The microstructure and surface morphologies of the thin films have been studied by X-ray diffraction (XRD) and the atomic force microscopy(AFM). AFM images show that the grain thickness and RMS roughness of the highly(111) oriented PZT thin films with thickness of 0.3 and 0.56μm are 0.2～0.3μm

2～3μm and 0.92nm

34nm

respectively. The remanent polarization (Pr) and coercive electric field (Ec) are 32.2μC/cm

and 79.9kV/cm

27.7μC/cm

and 54.4 kV/cm; at 100kHz

the dielectric constant and dissipation factor are 539 and 0.066

821 and 0.029

respectively.

关键词

Keywords

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