Mo/Si多层膜残余应力的研究

向鹏; 金春水

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Mo/Si多层膜残余应力的研究

材料科学与技术 | 更新时间：2020-08-12

- Mo/Si多层膜残余应力的研究
- Measurement of residual stress in molybdenum/silicon multilayer coat ings
- 光学精密工程 2003年11卷第1期页码：62-67
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所, 应用光学国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  中国科学院创新基金资助项目(No.CXJJ-19S002)
- DOI：
  中图分类号： O484
- 收稿日期：2002-07-17，
  
  修回日期：2002-12-15，
  
  网络出版日期：2003-02-15，
  
  纸质出版日期：2003-02-15
- 稿件说明：
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向鹏, 金春水. Mo/Si多层膜残余应力的研究[J]. 光学精密工程, 2003,(1): 62-67

XIANG Peng, JIN Chun-shui. Measurement of residual stress in molybdenum/silicon multilayer coat ings[J]. Editorial Office of Optics and Precision Engineering, 2003,(1): 62-67
向鹏, 金春水. Mo/Si多层膜残余应力的研究[J]. 光学精密工程, 2003,(1): 62-67 DOI：

XIANG Peng, JIN Chun-shui. Measurement of residual stress in molybdenum/silicon multilayer coat ings[J]. Editorial Office of Optics and Precision Engineering, 2003,(1): 62-67 DOI：

摘要

在极紫外光刻技术中

光学系统对多层膜光学元件表面面形精度有严格的要求

并且多层膜光学元件需要较高的反射率.由于多层膜中存在的内应力将改变光学元件的表面面形

因此在不减少反射率的前提下

一定要减少或补偿多层膜内的残余应力.论述了Mo/Si多层膜应力产生的原因和几种减少与补偿应力的技术

介绍应力的几种测量方法.

Abstract

The stringent surface figure requirements for the multilayer-c oated elements in an extreme ultraviolet (EUV) projection lithography system mak es it desirable to minimize the deformation resulting from multiplayer film stress es. However

the stress must be reduced or compensated without decreasing EUV refl ectivity because the reflectivity has a strong impact on the throughput of an EUV lithog raphy tool. Several stress reduction and compensation techniques applicable to Mo/Si multilayer coatings

and several stress measurem ent methods are discussed in detail.

关键词

Keywords

references

CEGLIO N M,HAWRYLUK A M. Soft X-ray projection lithography system design[A]. 1991 OSA Technical Digest Series[C]. Washingto, D C,1991.

CEGLIO N M. Design considerations for a front end illumination system for soft X-ray projection lithography[J]. Appl Opt, 1993,32: 7050-7052.

MONTCALM C,BAJT S, MIRKARIMI P B. Multilayer reflective coatings for extreme-ultraviolet lithograph[J]. SPIE, 1998,3331: 42-51.

STEARNS D G, ROSEN R S,VERNON S P. Molydemum/beryllium multilayer mirrors for normal incidence in the extreme ultraviolet[J].Appl Opt, 1993,32: 6952-6960.

JIN CH SH, MA Y Y, PEI SH, et al.Development of an experimental EUVL system[J]. Optics and Precision Engineering, 2001,9(5): 418-423.(in Chinese)

薛增泉,吴全德,李洁. 薄膜物理[M].北京:电子工业出版社,1991.XUE Z Q, WU Q D, LI J.Thin film physics[M].Beijing: Electronic Industry Publishing House,1991.(in Chinese)

TINONE M, HAGA T, Kinoshita.Multilayer sputter deposition stress control[J].Electron Spectrosco, Relat Phenom, 1996,80:461-464.

FREITAG J M, CLEMENS B M. Stress evolution in Mo/Si multilayers for high-reflectivity extreme ultraviolet mirrors[J]. Appl Phy Lett, 1998,73: 43-45.

NGUYEN T D, LU X, UNDERWOOD J H. In physics of X-ray multilayer structures[A]. Optical Society of America[C]. Washington,D C, 1994.103-105.

NGUYEN T D,KHAN M C,UNDERWOOD J H. In OSA Proceedings on extreme ultraviolet lithography[A]. AtwoodOptical Society of America[C]. Washington,D C, 1994.56-59.

MIRKARIMI P B,MONTCALM C. Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme ultraviolet lithography[J].SPIE, 1996,3331: 133-148.

WIND D L,BROWN W L, VOLKEN C A, et al. Variation in stress with background pressure in sputtered Mo/Si multilayer films[J]. J Appl Phys,1995,78: 2423-2430.

CHENG Y,SMITH D J,STEARNS M B,et al. Imaging X-ray multilayer structures using cross-sectional high resolution electron microscopy[J]. J Appl Phys, 1992,72: 5165-5171.

STEARNS M B,CHANG C H,STEARNS D G. Optimization of growth conditions of vapor deposited Mo/Si multilayers[J].J Appl Phys, 1992,71: 187-195.

NGUYEN T D. Stress,microstructure, and themal behavior in Mo/Si x-ray multilayer[J]. Mat Res Soc Symp Proc 1995, 382: 296-301.

SHIRAISHI M,ISHIYMAM W,OSHINO T, et al. Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering[J]. SPIE, 2000,3997: 620-627.

SHITANI Y,MIYATA N. Thermal diffusion of si Atoms at the interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J].Optics and Precision Engineering,2001,9(5):446-450.(in Chinese)

WASA W,MIWA S, MURAKAMI K. Extended Abst[J].Jap Soc Appl Phys, 1995,(2):491-495.

SHIRAISHI M, ISHIYAMA W, et al. Low-stress molybdemum/silicon multilayer coatings for extreme ultravilolet lithography[J]. Jpn J Appl Phys, 2000, 39: 6810-6814.

SHIRAISHI M,ISHIYAMA W,KANDAKA N. In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayer for extreme ultraviolet lithography[J].SPIE, 2001, 4343: 590-598.

ODA M, UNE A. A highly accurate stress measurement system for producing precise X-ray masks.[J].J Appl Phys,1995,34:6729-6733.

田民波,刘德令.薄膜科学与技术[M].北京:机械工业出版社,1991.TIAN M B, LIU D L. Handbook of thin film scince and technology[M].Beijng: China Machine Press, 1991.(in Chinese)

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