高功率底发射VCSELs的制作与特性研究

孙艳芳; 金珍花; 宁永强; 秦莉; 晏长岭; 路国光; 套格套; 刘云; 王立军; 崔大复; 李惠青; 许祖彦

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高功率底发射VCSELs的制作与特性研究

先进加工制造技术 | 更新时间：2020-08-12

- 高功率底发射VCSELs的制作与特性研究
- Fabrication and experimental characterization of high power bottom-emitting VCSELs
- 光学精密工程 2004年12卷第5期页码：449-453
- 作者机构：
  
  1. 中国科学院, 长春光学精密机械与物理研究所, 激发态物理重点实验室, 吉林, 长春, 130033
  2. 中国科学院, 研究生院, 北京, 100039
  3. 中国科学院, 物理所, 北京, 100080
- 作者简介：
- 基金信息：
  
  国家自然科学基金(No.10104016)();吉林省基金(No.200220604)()
- DOI：
  中图分类号： TN248.1
- 收稿日期：2004-07-12，
  
  修回日期：2004-08-24，
  
  网络出版日期：2004-10-15，
  
  纸质出版日期：2004-10-15
- 稿件说明：
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孙艳芳, 金珍花, 宁永强, 秦莉, 晏长岭, 路国光, 套格套, 刘云, 王立军, 崔大复, 李惠青, 许祖彦. 高功率底发射VCSELs的制作与特性研究[J]. 光学精密工程, 2004,(5): 449-453

SUN Yan-fang, JIN Zhen-hua, NING Yong-qiang, QIN Li, YAN Chang-ling, LU Guo-guang, TAO Ge-tao, LIU Yun, WANG Li-jun, CUI Da-fu, LI Hui-qing, XU Zu-yan. Fabrication and experimental characterization of high power bottom-emitting VCSELs[J]. Editorial Office of Optics and Precision Engineering, 2004,(5): 449-453
孙艳芳, 金珍花, 宁永强, 秦莉, 晏长岭, 路国光, 套格套, 刘云, 王立军, 崔大复, 李惠青, 许祖彦. 高功率底发射VCSELs的制作与特性研究[J]. 光学精密工程, 2004,(5): 449-453 DOI：

SUN Yan-fang, JIN Zhen-hua, NING Yong-qiang, QIN Li, YAN Chang-ling, LU Guo-guang, TAO Ge-tao, LIU Yun, WANG Li-jun, CUI Da-fu, LI Hui-qing, XU Zu-yan. Fabrication and experimental characterization of high power bottom-emitting VCSELs[J]. Editorial Office of Optics and Precision Engineering, 2004,(5): 449-453 DOI：

摘要

研究制作了大面积底发射氧化限制面发射激光器

并分析了器件特性.通过增加有源区面积

改进制作工艺

采用Al2O3作钝化膜和多层复合HfO

作增透膜等方法

提高了激光器输出功率.分析了最大输出功率与有源区直径和注入电流之间的依赖关系.结果表明:有源区直径分别为500μm和600μm的单管

室温下均达到连续输出功率1.95W

这也是目前国际上所实现的单管室温连续输出最高功率;实验所得最大输出功率与有源区直径和注入电流之间的依赖关系与理论计算所得结果一致.并特别讨论了直径200μm的器件的近场和远场光强分布

获得单横模工作.

Abstract

High power bottom emitting vertical-cavity surface-emitting lasers(VCSELs)emitting at 980 nm was fabricated and characterized. Through enlarging the active diameter

improving the fabrication technology and using Al

and HfO

as passivation layer and antireflection coating respectively

the output power was greatly increased. The dependence of maximum output power on device diameter and injected current was investigated

which is in good agreement with theoretical simulation. A continuous-wave(CW)output power as high as 1.95 W for devices with diameters of 500 μm and 600　μm has been achieved

which is the highest value reported for a single device. The detailed analysis of the nearfield and farfield images of a 200 μm diameter device exhibits a homogeneous current distribution and a single transverse mode operation.

关键词

Keywords

references

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DABBICCO M, SPAGNOLO V,FERRARA M, et al. Experimental eetermination of the temperature distribution in trench-confined oxide vertical-cavity surface-emitting lasers[J] .IEEE Journal of Quantum Electronics, 2003,39(6):701-707.

YAN CH,NING Y, QIN L, et al. A high Power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics[J] .Semiconductor Science and Technology, 2004,19:685-689.

WIPIEJEWSKI T, PETER M G, THIBEAULT B J, et al. Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes[J] .IEEE Photonics Technology Letters, 1996, 8(1):10-12.

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