纳秒激光等离子体光源的光谱测量技术

尼启良

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纳秒激光等离子体光源的光谱测量技术

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- 纳秒激光等离子体光源的光谱测量技术
- Technology for measuring spectrum from nanosecond laser plasma soft X-ray source
- 光学精密工程 2005年13卷第2期页码：211-218
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春 130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O536
- 收稿日期：2005-02-10，
  
  修回日期：2005-03-06，
  
  网络出版日期：2005-04-30，
  
  纸质出版日期：2005-04-30
- 稿件说明：
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尼启良. 纳秒激光等离子体光源的光谱测量技术[J]. 光学精密工程, 2005,13(2):211-218.

NI Qi-liang. Technology for measuring spectrum from nanosecond laser plasma soft X-ray source[J]. Optics and precision engineering, 2005, 13(2): 211-218.
尼启良. 纳秒激光等离子体光源的光谱测量技术[J]. 光学精密工程, 2005,13(2):211-218. DOI：

NI Qi-liang. Technology for measuring spectrum from nanosecond laser plasma soft X-ray source[J]. Optics and precision engineering, 2005, 13(2): 211-218. DOI：

摘要

提出了一种新的探测和测量激光等离子体软X射线源光谱强度的方法。此方法使用通道电子倍增器和定标过的硅光电二极管为探测器

前者是非标准探测器

后者为标准探测器。应用电荷灵敏前置放大器和峰值探测器测量探测器产生的电量

并以高分辨率的光谱仪为分光元件

在已知光栅效率、通道电子倍增器增益、硅光电二极管能量响应的条件下

给出了计算激光等离子体软X射线源在某一波长光谱强度的公式。

Abstract

A method detecting and measuring the intensity of spectrum from laser plasma soft X-ray source is presented. A channel electron multiplier (CEM) and a calibrated silicon photodiode are used as detectors in this method

the former is a nonstandard detector and the latter is a standard one. Charge-sensitive preamplifiers and peak detector are used for measuring total charges generated by detectors

and a monochromator with high resolution is employed as spectrometer

formulae to calculate the intensity of spectrum from laser plasma soft x-ray source is given

based on known the grating efficiency of monochromator

CEM's gain and responsivity of silicon photodiode to photons.

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Keywords

references

. DITMIRE T, DONNELLY T, RUBENCHIK A M,et al.Interaction of intense laser pulses with atomic clusters[J].Physical Review A, 2000, 53(5):3379-3402.

. 尼启良,陈波,巩岩,等. 激光等离子体软X射线光源的一种诊断方法[J]. 光学精密工程,2002,10(3):235-238. NI Q L, CHEN B, GONG Y, et al. A diagnostic method to soft X-ray laser-produced plasma source[J]. Optics and Precision Engineering, 2002, 10(3):235-238.(in Chinese).

. 曹继红,尼启良,巩岩. 虚拟仪器实现极紫外波段光谱数据采集和处理[J]. 光学精密工程,2002,10(6增):103-106. CAO J H, NI Q L, GONG Y, et al. Data acquisition and processing in EUV band with labview program[J]. Optics and Precision Engineering, 2002, 10(6 supplement):103-106.(in Chinese)

. GULLIKSON E M, KORDE R, CANFIELD L R. Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions[J]. Journal of Electron Spectroscopy and Related Phenomena, 1996 , 80:313-316.

. FUNSTEN H O, RITZAU S M, HARPER R W H. Response of 100% internal quantum efficiency silicon photodiodes to 200 eV to 40 keV electrons . IEEE Transactions on Nuclear Science, 2001, 48(6):1785-1789.

. KORDE R. One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes[J]. IEEE Transactions on Nuclear Science, 1993, 40(6):1655-1659.

. BAILEY S M, WOODS T N, CANFIELD L R, et al.Sounding rocket measurements of the solar soft X-ray irradiance[J]. Solar Physics. 1999, 186: 243-257.

. CANFIELD L R, VEST R. Silicon photodiodes with integrated thin film filters for selective bandpasses in the extreme ultraviolet[J]. SPIE, 1994, 2282:1-38.

. OGAWA H S, MCMULLIN D R, JUDGE D L. Normal incidence spectrometer using high density transmission grating technology and high efficiency silicon photodiodes for absolute solar EUV irradiance measurements[J]. Optical Engineering, 1993, 32(12): 3121-3125.

. KORDE R,FURUNO K,HWANG H. Large area silicon detectors for calorimetry . Proc. Symp. On Detector Research and Development for the Superconducting Super Collider. World Scientific, 1991,334-336.

. JORQUERA C R, KORDE R, FORD V G. Design of new photodiode Standards for use in the MISR in-flight calibrator[J]. IEEE, 1994, 5(94):1998-2000.

. CANFIELD L R, VEST R E. Absolute silicon photodiodes for 160 nm to 254 nm photons[J]. Metrologia, 1998, 35:329-334.

. SEELY F, KORDE R, HANSER F, et al. Characterization of silicon photodiode detectors with multilayer filter coatings for 17~150 A  [J]. SPIE, 1999, 3764:103-109.

. FUNSTEN H O, SUSZCYNSKY D M, RITZAU S M. Response of 100% internal carrier collection efficiency silicon photodiodes to low-energy ions[J]. IEEE Transactions on Nuclear Science, 1997, 44(6):2561-2565.

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