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1. 长春理工大学 高功率半导体激光重点实验室,吉林 长春,130022
2. 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033
收稿日期:2005-03-10,
修回日期:2005-04-14,
网络出版日期:2005-06-30,
纸质出版日期:2005-06-30
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何春凤, 路国光, 单肖楠, 等. 高功率980 nm垂直外腔面发射 激光器(VECSEL)的理论研究[J]. 光学精密工程, 2005,13(3):247-252.
HE Chun-feng, LU Guo-guang, SHAN Xiao-nan, et al. Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)[J]. Optics and precision engineering, 2005, 13(3): 247-252.
何春凤, 路国光, 单肖楠, 等. 高功率980 nm垂直外腔面发射 激光器(VECSEL)的理论研究[J]. 光学精密工程, 2005,13(3):247-252. DOI:
HE Chun-feng, LU Guo-guang, SHAN Xiao-nan, et al. Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)[J]. Optics and precision engineering, 2005, 13(3): 247-252. DOI:
利用周期谐振增益结构设计了以InGaAs/GaAsP/AlGaAs为有源区的980 nm二极管泵浦垂直外腔面发射半导体激光器。根据理论模型计算了纵模限制因子、阈值增益、光增益、输出功率等特征参数
优化了激光器特征参数并设计了OPS-VECSEL结构。理论计算表明
LD泵浦的垂直外腔面发射激光器的输出功率可大于1.0 W。
By using period resonance gain structure
a laser diode (LD) pumped 980 nm vertical external-cavity surface-emitting laser (VECSEL) with active region of InGaAs/GaAsP/AlGaAs system was developed. The longitudinal confinement factor
threshold gain
optical gain and output power were calculated. The characteristic parameters of VECSEL were optimized
and the structure of VECSEL was designed. The results show that the output power of a LD-pumped VECSEL can be larger than 1.0 W based on the theoretical calculations.
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. 王勇刚,马骁宇,江李,等. 一种新型垂直外腔面发射半导体激光器[J]. 激光与红外,2003,33(6):406-408. WANG Y G, MA X Y, JIANG L, et al.A kind of novel and excellent semiconductor vertical external cavity surface emission laser[J].Laser and Infrared,2003,33(6):406-408.(in Chinese)
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. 孙艳芳,金珍花,宁永强,等. 高功率底发射VECSELs的制作与特性研究[J]. 光学 精密工程,2004,12(5):449-453. SUN Y F, JIN ZH H, NING Y Q,et al.Fabrication and experimental characterization of high power bottom-emitting VECSELs[J].Optics and Precision Engineering,2004,12(5):449-453.(in Chinese)
. ALFORD J,RAYMOND T D,ALLERMAN A A.High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser[J].J.Opt.Soc.Am.B.,2002,19(4):663-666.
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. YAN C,QIN L,ZHANG S.Design and calculation characteristics of a novel diode-pumped long wavelength vertical-cavity surface-emitting semiconductor laser[J].SPIE,2004,5280:15-21. 作者简介: 何春凤(1980-),女,黑龙江齐齐哈尔人,中国科学院长春光学精密机械与物理研究所在读博士研究生,研究方向为垂直外腔面发射激光器。E-mail :hcf4405@tom.com
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