ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate

GAO Jin-song; XU Ying; WANG Xiao-yi; WANG Tong-tong

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ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate

更新时间：2020-08-12

- ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
- ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
- 光学精密工程 2005年13卷第4期页码：397-402
- 作者机构：
  
  Optical Technology and Research Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：2005-06-06，
  
  修回日期：2005-06-16，
  
  网络出版日期：2005-08-30，
  
  纸质出版日期：2005-08-30
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GAO Jin-song, XU Ying, WANG Xiao-yi, 等. ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J]. 光学精密工程, 2005,13(4):397-402.

GAO Jin-song, XU Ying, WANG Xiao-yi, et al. ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J]. Optics and precision engineering, 2005, 13(4): 397-402.
GAO Jin-song, XU Ying, WANG Xiao-yi, 等. ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J]. 光学精密工程, 2005,13(4):397-402. DOI：

GAO Jin-song, XU Ying, WANG Xiao-yi, et al. ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J]. Optics and precision engineering, 2005, 13(4): 397-402. DOI：

摘要

ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of

(In

)=90% and

(SnO

)=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore

the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time

respectively. The relation between optical

electrical properties and structure was discussed in detail.

Abstract

ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of

(In

)=90% and

(SnO

the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time

respectively. The relation between optical

electrical properties and structure was discussed in detail.

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Keywords

references

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