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中国科学技术大学 精密机械与精密仪器系,安徽 合肥,230027
收稿日期:2005-08-09,
修回日期:2005-09-01,
网络出版日期:2005-12-30,
纸质出版日期:2005-12-30
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许晓慧, 鲁 健, 朱龙洋, 等. 基于激光多普勒技术的PZT薄膜压电性能测试研究[J]. 光学精密工程, 2005,13(6):658-663.
XU Xiao-hui, LU Jian, ZHU Long-yang, et al. Measurement of piezoelectric properties of PZT films by laser Doppler technique[J]. Optics and precision engineering, 2005, 13(6): 658-663.
应用基于激光多普勒技术的微小形变分析方法
并引入数字锁相技术
成功实现了PZT(Pb(Zr
Ti)O
3
)铁电薄膜的压电性能测试。对商用压电陶瓷在小信号激励下的压电性能测试表明
数字锁相技术的引入能有效抑制系统噪声
并提高激光多普勒系统的位移检测分辨率
使其达到皮米量级。此外
研究了用溶胶-凝胶技术和溶胶-电雾化技术制备得到的PZT薄膜的电压-位移曲线和压电位移"蝴蝶线"
实验结果表明:在5 V直流偏置下测得两种方法制备得到的PZT薄膜的d
33
压电系数分别为218.7 pC/N和215.8 pC/N
相应的标准偏差分别为12.7和28.6。
Laser Doppler technique was used to measure the piezoelectric properties of PZT(Pb(Zr
Ti)O
3
) thin films. The measurement of piezoelectric properties on commercial PZT bulk indicated that the introduction of lock-in technique
which offered excellent noise rejection
raised the displacement resolution up to picometer order. Then experiments were performed on PZT films derived by sol-gel method and Electrical Spray Deposition (ESD) method. The obtained results show that the piezoelectric coefficients (d
33
) of the two films are 218.7 pC/N and 215.8 pC/N respectively
with 5 V dc bias
and the corresponding standard deviations are 12.7 and 28.6.
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