There are two growth modes (monolayer-by-monolayer and bilayer-by-bilayer) under different conditions that correspond to monolayer and bilayer RHEED (Reflection High Energy Electron Diffraction) oscillations when GaAs epitaxial layer grows on GaAs (110) substrate. TEM (Transmission Electron Microscope) and photoluminescence measurements at room temperature and low temperature show that the quantum wells have very bad optical property under bilayer-by-bilayer growth mode and have nice optical property and rough interfaces under monolayer-by-monolayer growth mode. The results show that using different RHEED oscillations under different growth conditions

it is possible to grow high quality quantum wells on GaAs(110) surface.