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1. 大连理工大学 辽宁省微纳米技术及系统重点实验室,辽宁 大连,116023
2. 大连理工大学 教育部精密与特种加工技术重点实验室,辽宁 大连,116023
收稿日期:2006-05-20,
修回日期:2006-10-08,
网络出版日期:2007-01-30,
纸质出版日期:2007-01-30
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杜立群, 刘海军, 秦 江, 等. 微电铸器件铸层均匀性的研究[J]. 光学精密工程, 2007,15(1):69-75.
DU Li-qun, LIU Hai-jun, QIN Jiang, et al. Study on uniformity of micro-electroformed device[J]. Optics and precision engineering, 2007, 15(1): 69-75.
理论分析了负脉冲电流对铸层的修饰作用
采用正负间断脉冲电流和正间断负连续脉冲电流进行了相应的微电铸的实验研究。实验采用的微电铸器件是特征宽度为90 μm的微流控芯片的金属模具。微电铸实验主要包括三个步骤:制作SU-8胶胶模
微电铸和去除SU-8胶。为了对实验结果进行对比分析
两组实验的工作时间和电流强度均采用240 min和2.5 A/dm
2
。将正负脉冲电流微电铸与正脉冲电流微电铸的实验结果进行了对比分析。研究结果表明
正负间断脉冲电流能够获得较好的器件铸层均匀性。由于在负向脉冲的间断时间内
铸层表面附近的浓度极差得以改变
因此正负间断脉冲电流微电铸的铸层均匀性优于正间断负连续脉冲电流微电铸。实验结果与理论分析结果相一致。
A theoretical investigation was presented to explain the effect of pulse-reverse current on the uniformity in micro-electroforming
and the micro-electroforming experiments of two different pulse-reverse currents with gaps were carried out .The two pulse-reverse currents were pulse-reverse current with gaps and pulse-reverse current without gaps in negative current
respectively. The micro-device in the experiments was the mold of micro-fluidic chip with feature width of 90 μm. All experiments consisted of three steps: making of SU-8 resist mold
micro-electroforming and removing of SU-8 resist. With the same working time and average current density
240 min and 2.5 A/dm
2
comparison was carried out between the pulse-reverse current experiments and the pulse current experiment. In contrast with the data of pulse-current micro-electroforming
better uniformity was obtained in experiments using the pulse-reverse currents. Because concentration difference over the micro pattern was improved during off-time of the negative current
surface quality was better in the experiment using the pulse-reverse current with gaps. Therefore
the results are consistent with the theoretical investigation.
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. QU N S, CHAN K C, ZHU D. Surface roughening in pulse current and pulse reverse current electroforming of nickel[J]. Surf. Coat. Technol., 1997,91(3): 220-240.
. 张立国,陈迪,杨帆,等. SU-8胶光刻工艺研究[J]. 光学 精密工程,2002,10(3):267-269. ZHANG L G, CHEN D, YANG F, et al.. Research on SU-8 resist photolithography process[J]. Opt. and Precision Eng.,2002,10(3):267-269.(in Chinese)
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